Inventor · disambiguated record
Klaus D. Beyer
Also filed as: BEYER KLAUS · BEYER KLAUS D · BEYER KLAUS DIETRICH
36 granted patents·1 pending application·2,561 citations·filing 1976–2015
98Inventor score
Top patents by PatentIndex Score
37 records- 0197US4944836AChem-mech polishing method for producing coplanar metal/insulator films on a substrateIBM·Filed 1985·Granted Jul 31, 1990·539 cites·11 claims
- 0295US5405795AMethod of forming a SOI transistor having a self-aligned body contactIBM·Filed 1994·Granted Apr 11, 1995·110 cites·10 claims
- 0395US4671851AMethod for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing techniqueIBM·Filed 1985·Granted Jun 9, 1987·189 cites·15 claims
- 0495US4528047AMethod for forming a void free isolation structure utilizing etch and refill techniquesIBM·Filed 1984·Granted Jul 9, 1985·105 cites·12 claims
- 0594US5234535AMethod of producing a thin silicon-on-insulator layerIBM·Filed 1992·Granted Aug 10, 1993·197 cites·24 claims
- 0693US5729039ASOI transistor having a self-aligned body contactIBM·Filed 1996·Granted Mar 17, 1998·100 cites·3 claims
- 0792US5391911AReach-through isolation silicon-on-insulator deviceIBM·Filed 1994·Granted Feb 21, 1995·138 cites·8 claims
- 0892US4758531AMethod of making defect free silicon islands using SEGIBM·Filed 1987·Granted Jul 19, 1988·100 cites·16 claims
- 0990US6498383B2Oxynitride shallow trench isolation and method of formationIBM·Filed 2001·Granted Dec 24, 2002·49 cites·10 claims
- 1089US5313094AThermal dissipation of integrated circuits using diamond pathsIBM·Filed 1992·Granted May 17, 1994·134 cites·3 claims
- 1188US5098856AAir-filled isolation trench with chemically vapor deposited silicon dioxide capIBM·Filed 1991·Granted Mar 24, 1992·102 cites·17 claims
- 1286US5444015ALarce scale IC personalization method employing air dielectric structure for extended conductorsIBM·Filed 1994·Granted Aug 22, 1995·77 cites·5 claims
- 1386US4745081AMethod of trench fillingIBM·Filed 1985·Granted May 17, 1988·67 cites·28 claims
- 1483US5276338ABonded wafer structure having a buried insulation layerIBM·Filed 1992·Granted Jan 4, 1994·68 cites·18 claims
- 1580US9927415B2Oil quality sensor and fryer with such oil quality sensorWTW WSS TECHNISCHE WERKSTAETTEN GMBH·Filed 2015·Granted Mar 27, 2018·7 cites·19 claims
- 1680US6764922B2Method of formation of an oxynitride shallow trench isolationIBM·Filed 2003·Granted Jul 20, 2004·22 cites·13 claims
- 1779US5366923ABonded wafer structure having a buried insulation layerIBM·Filed 1993·Granted Nov 22, 1994·54 cites·22 claims
- 1879US5227658ABuried air dielectric isolation of silicon islandsIBM·Filed 1991·Granted Jul 13, 1993·63 cites·6 claims
- 1979US4264374ACleaning process for p-type silicon surfaceIBM·Filed 1980·Granted Apr 28, 1981·56 cites·6 claims
- 2078US4924284AMethod of trench fillingIBM·Filed 1988·Granted May 8, 1990·41 cites·19 claims
- 2177US6599813B2Method of forming shallow trench isolation for thin silicon-on-insulator substratesIBM·Filed 2001·Granted Jul 29, 2003·25 cites·36 claims
- 2276US5962895ASOI transistor having a self-aligned body contactIBM·Filed 1994·Granted Oct 5, 1999·31 cites·4 claims
- 2374US7183175B2Shallow trench isolation structure for strained Si on SiGeIBM·Filed 2005·Granted Feb 27, 2007·5 cites·12 claims
- 2473US6709951B2Oxynitride shallow trench isolation and method of formationIBM·Filed 2002·Granted Mar 23, 2004·15 cites·9 claims
- 2572US5232866AIsolated films using an air dielectricIBM·Filed 1991·Granted Aug 3, 1993·48 cites·9 claims
- 2672US4110125AMethod for fabricating semiconductor devicesIBM·Filed 1977·Granted Aug 29, 1978·26 cites·22 claims
- 2772US4069068ASemiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regionsIBM·Filed 1976·Granted Jan 17, 1978·28 cites·9 claims
- 2868US5192708ASub-layer contact technique using in situ doped amorphous silicon and solid phase recrystallizationIBM·Filed 1991·Granted Mar 9, 1993·44 cites·12 claims
- 2959US5264387AMethod of forming uniformly thin, isolated silicon mesas on an insulating substrateIBM·Filed 1992·Granted Nov 23, 1993·27 cites·12 claims
- 3058US5530290ALarge scale IC personalization method employing air dielectric structure for extended conductorIBM·Filed 1994·Granted Jun 25, 1996·22 cites·13 claims
- 3158US5306659AReach-through isolation etching method for silicon-on-insulator devicesIBM·Filed 1993·Granted Apr 26, 1994·23 cites·4 claims
- 3256US6602759B2Shallow trench isolation for thin silicon/silicon-on-insulator substrates by utilizing polysiliconIBM·Filed 2000·Granted Aug 5, 2003·7 cites·26 claims
- 3356US4333794AOmission of thick Si3 N4 layers in ISA schemesIBM·Filed 1981·Granted Jun 8, 1982·20 cites·10 claims
- 3450US6825097B2Triple oxide fill for trench isolationIBM·Filed 2002·Granted Nov 30, 2004·5 cites·16 claims
- 3541US4680614APlanar void free isolation structureBEYER KLAUS D·Filed 1985·Granted Jul 14, 1987·13 cites·7 claims
- 3640US2004164373A1Shallow trench isolation structure for strained Si on SiGeFiled 2003·Application pending·0 cites
- 3734US5965459AMethod for removing crevices induced by chemical-mechanical polishingIBM·Filed 1996·Granted Oct 12, 1999·4 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →