Inventor · disambiguated record
Rupert Krautbauer
Also filed as: KRAUTBAUER RUPERT
3 granted patents·2 pending applications·12 citations·filing 2005–2008
63Inventor score
Top patents by PatentIndex Score
5 records- 0178US7341787B2Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafersSILTRONIC AG·Filed 2005·Granted Mar 11, 2008·8 cites·8 claims
- 0263US7202146B2Process for producing doped semiconductor wafers from silicon, and the wafers produced therebySILTRONIC AG·Filed 2005·Granted Apr 10, 2007·3 cites·13 claims
- 0348US8449675B2Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor waferKRAUTBAUER RUPERT·Filed 2008·Granted May 28, 2013·1 cites·17 claims
- 0440US2006131649A1Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor waferSILTRONIC AG·Filed 2005·Application pending·0 cites
- 0540US2006174817A1Process for producing a silicon single crystal with controlled carbon contentSILTRONIC AG·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →