Inventor · disambiguated record
Petrus Hubertus Cornelis Magnee
Also filed as: MAGNEE PETRUS · MAGNEE PETRUS H C · MAGNEE PETRUS HUBERTUS C · MAGNEE PETRUS HUBERTUS CORNELI
28 granted patents·10 pending applications·107 citations·filing 2000–2024
94Inventor score
Files withNXP BV25KONINKL PHILIPS ELECTRONICS NV7DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS1GRIDELET EVELYNE1KONINK PHILIPS ELECTRONICS N C1
Top patents by PatentIndex Score
38 records- 0188US9570546B2Bipolar transistorNXP BV·Filed 2015·Granted Feb 14, 2017·8 cites·14 claims
- 0287US9905679B2Semiconductor device comprising a bipolar transistorNXP BV·Filed 2016·Granted Feb 27, 2018·7 cites·15 claims
- 0381US6774434B2Field effect device having a drift region and field shaping region used as capacitor dielectricKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 10, 2004·31 cites·18 claims
- 0476US8580596B2Front end micro cavityMAGNEE PETRUS H C·Filed 2009·Granted Nov 12, 2013·12 cites·19 claims
- 0576US7910448B2Method for fabricating a mono-crystalline emitterNXP BV·Filed 2005·Granted Mar 22, 2011·5 cites·20 claims
- 0669US10490407B2Method of making a semiconductor switch deviceNXP BV·Filed 2018·Granted Nov 26, 2019·1 cites·15 claims
- 0767US7074685B2Method of fabrication SiGe heterojunction bipolar transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2003·Granted Jul 11, 2006·13 cites·10 claims
- 0866US10158002B2Semiconductor switch deviceNXP BV·Filed 2017·Granted Dec 18, 2018·1 cites·15 claims
- 0965US8871599B2Method of manufacturing IC comprising a bipolar transistor and ICDONKERS JOHANNES JOSEPHUS THEODORUS MARINUS·Filed 2012·Granted Oct 28, 2014·2 cites·13 claims
- 1065US6551890B2Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitorKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Apr 22, 2003·11 cites·7 claims
- 1162US8686424B2Bipolar transistor manufacturing method, bipolar transistor and integrated circuitGRIDELET EVELYNE·Filed 2012·Granted Apr 1, 2014·1 cites·7 claims
- 1260US9111987B2Method of manufacturing a bipolar transistor, bipolar transistor and integrated circuitNXP BV·Filed 2014·Granted Aug 18, 2015·1 cites·14 claims
- 1357US2025210546A1Semiconductor device with a defect region and method of fabrication thereforNXP BV·Filed 2023·Application pending·0 cites
- 1456US2025254900A1Semiconductor device with monocrystalline extrinsic baseNXP BV·Filed 2024·Application pending·0 cites
- 1555US6777780B2Trench bipolar transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 17, 2004·7 cites·14 claims
- 1655US6410395B1Method of manufacturing a semiconductor device comprising SiGe HBTsKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Jun 25, 2002·7 cites·7 claims
- 1755US2025338518A1Patterned deep trench isolation for passive devicesNXP BV·Filed 2024·Application pending·0 cites
- 1853US11901414B2Semiconductor device with a defect layer and method of fabrication thereforNXP BV·Filed 2021·Granted Feb 13, 2024·0 cites·17 claims
- 1953US9431524B2Method of manufacturing IC comprising a bipolar transistor and ICNXP BV·Filed 2014·Granted Aug 30, 2016·0 cites·7 claims
- 2053US8946042B2Bipolar transistor manufacturing method, bipolar transistor and integrated circuitNXP BV·Filed 2014·Granted Feb 3, 2015·0 cites·8 claims
- 2153US2023420546A1Transistor with current terminal regions and channel region in layer over dielectricNXP USA INC·Filed 2022·Application pending·0 cites
- 2251US2025081486A1Utilization of sacrificial material for current electrode formationNXP BV·Filed 2023·Application pending·0 cites
- 2350US11990536B2Bipolar transistors with multilayer collectorsNXP BV·Filed 2021·Granted May 21, 2024·0 cites·16 claims
- 2449US2021257358A1Semiconductor deviceNXP BV·Filed 2021·Application pending·0 cites
- 2542US2014084417A1Metal-insulator-metal (mim) capacitorNXP BV·Filed 2013·Application pending·0 cites
- 2641US10566423B2Semiconductor switch device and a method of making a semiconductor switch deviceNXP BV·Filed 2016·Granted Feb 18, 2020·0 cites·13 claims
- 2741US10431666B2Method of making a semiconductor switch deviceNXP BV·Filed 2018·Granted Oct 1, 2019·0 cites·12 claims
- 2840US10825900B2Semiconductor switch device and method having at least two contacts located on either the source region or the drain regionNXP BV·Filed 2018·Granted Nov 3, 2020·0 cites·17 claims
- 2940US10784257B2Integrating silicon-BJT to a silicon-germanium-HBT manufacturing processNXP BV·Filed 2018·Granted Sep 22, 2020·0 cites·13 claims
- 3039US9484398B2Metal-insulator-metal (MIM) capacitorNXP BV·Filed 2015·Granted Nov 1, 2016·0 cites·11 claims
- 3139US7915709B2Semiconductor device and method of manufacturing the sameNXP BV·Filed 2005·Granted Mar 29, 2011·0 cites·20 claims
- 3237US7794540B2Method of manufacturing a semiconductor deviceNXP BV·Filed 2003·Granted Sep 14, 2010·0 cites·10 claims
- 3336US7566919B2Method to reduce seedlayer topography in BICMOS processNXP BV·Filed 2004·Granted Jul 28, 2009·0 cites·20 claims
- 3434US2007120254A1Semiconductor device comprising a pn-heterojunctionKONINK PHILIPS ELECTRONICS N C·Filed 2004·Application pending·0 cites
- 3533US8901669B2Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistorsMERTENS HANS·Filed 2012·Granted Dec 2, 2014·0 cites·16 claims
- 3633US2016141357A1Semiconductor device and methodNXP BV·Filed 2015·Application pending·0 cites
- 3732US2002096713A1Semi-conductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Application pending·0 cites
- 3828US6917077B2Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diodeKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jul 12, 2005·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →