Inventor · disambiguated record
Nabil G. Mistkawi
Also filed as: MISTKAWI NABIL G
11 granted patents·3 pending applications·31 citations·filing 2004–2022
86Inventor score
Top patents by PatentIndex Score
14 records- 0193US9859424B2Techniques for integration of Ge-rich p-MOS source/drain contactsINTEL CORP·Filed 2014·Granted Jan 2, 2018·12 cites·25 claims
- 0286US10147817B2Techniques for integration of Ge-rich p-MOS source/drainINTEL CORP·Filed 2018·Granted Dec 4, 2018·3 cites·20 claims
- 0383US10541334B2Techniques for integration of Ge-rich p-MOS source/drainINTEL CORP·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
- 0478US8025811B2Composition for etching a metal hard mask material in semiconductor processingINTEL CORP·Filed 2006·Granted Sep 27, 2011·6 cites·17 claims
- 0573US8426319B2Composition for etching a metal hard mask material in semiconductor processingMISTKAWI NABIL G·Filed 2008·Granted Apr 23, 2013·6 cites·19 claims
- 0672US2023098459A1Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapseTAHOE RES LTD·Filed 2022·Application pending·0 cites
- 0769US11515304B2Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapseTAHOE RES LTD·Filed 2020·Granted Nov 29, 2022·0 cites·20 claims
- 0866US9472456B2Technology for selectively etching titanium and titanium nitride in the presence of other materialsINTEL CORP·Filed 2013·Granted Oct 18, 2016·2 cites·24 claims
- 0956US10833076B2Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapseINTEL CORP·Filed 2016·Granted Nov 10, 2020·0 cites·20 claims
- 1048US10944006B2Geometry tuning of fin based transistorINTEL CORP·Filed 2016·Granted Mar 9, 2021·0 cites·21 claims
- 1144US11538905B2Nanowire transistors employing carbon-based layersINTEL CORP·Filed 2016·Granted Dec 27, 2022·0 cites·20 claims
- 1243US10755984B2Replacement channel etch for high quality interfaceINTEL CORP·Filed 2015·Granted Aug 25, 2020·0 cites·11 claims
- 1338US2019214460A1Fabricating nanowire transistors using directional selective etchingINTEL CORP·Filed 2016·Application pending·0 cites
- 1431US2005159011A1Selective etching silicon nitrideFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →