US2023098459A1PendingUtilityA1

Integrated circuit devices with non-collapsed fins and methods of treating the fins to prevent fin collapse

Assignee: TAHOE RES LTDPriority: Sep 30, 2016Filed: Nov 28, 2022Published: Mar 30, 2023
Est. expirySep 30, 2036(~10.2 yrs left)· nominal 20-yr term from priority
H10P 70/20H10D 89/10H10D 84/0158H10D 84/038H10D 64/517H10D 62/151H10D 62/121H10D 62/116H10D 30/62H10D 30/60H10D 30/024H10D 48/30H10D 64/23H10D 84/834B82Y 10/00H01L 21/02057H01L 27/0886H01L 29/42372H01L 29/0673H01L 27/0207H01L 29/0847H01L 29/0653H01L 21/823431
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Claims

Abstract

An integrated circuit device with a substrate and a plurality of fins is provided where fin width is less than 11 nanometers, fin height is greater than 155 nanometers and spacing between any two neighboring fins is less than 30 nanometers and each fin is in non-collapsed state. An integrated circuit device with a substrate and a plurality of fins is provided where fin width is less than 15 nanometers, fin height is greater than 190 nanometers and spacing between any two neighboring fins is less than 30 nanometers and each fin is in non-collapsed state. A method for forming a fin-based transistor structure is provided where a plurality of fins on a substrate are pre-treated with at least one of a self-assembled monolayer, a non-polar solvent, and a surfactant. One or more of these treatments is to reduce adhesion and/or cohesive forces to prevent occurrence of fin collapse.

Claims

exact text as granted — not AI-modified
1 . An integrated circuit device, comprising:
 a substrate;   a first fin and a second fin extending from the substrate, wherein each of the first and second fins includes a lower portion and an upper portion; and   isolation material adjacent at least the lower portions of the first and second fins;   wherein each of the first and second fins is in a non-collapsed state,   wherein a horizontal width of each of the first and second fins is a distance between sidewall surfaces of the fin at the bottom of the upper portion of the fin, the horizontal width of the first and second fins is less than 11 nm,   wherein a vertical total height, for each of the first and second fins, is a sum of a first height of the lower portion of the fin and a second height of the upper portion of the fin, the vertical total height each of the first and second fins is greater than 200 nm, and   wherein a horizontal spacing between the first and second fins is less than 53 nm as measured between respective sidewall surfaces of the first and second fins at the respective bottoms of the upper portions of the first and second fins.   
     
     
         2 .- 20 . (canceled)

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