Inventor · disambiguated record
Jon C. Farr
Also filed as: FARR JON · FARR JON C · FARR JON CHRISTIAN
10 granted patents·3 pending applications·24 citations·filing 2008–2023
82Inventor score
Top patents by PatentIndex Score
13 records- 0190US8753474B2Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactorNANGOY ROY C·Filed 2010·Granted Jun 17, 2014·11 cites·14 claims
- 0288US11940819B1Mass flow controller based fast gas exchangeAPPLIED MATERIALS INC·Filed 2023·Granted Mar 26, 2024·2 cites·20 claims
- 0382US8158522B2Method of forming a deep trench in a substrateSIRAJUDDIN KHALID M·Filed 2010·Granted Apr 17, 2012·10 cites·16 claims
- 0466US9070633B2Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactorAPPLIED MATERIALS INC·Filed 2014·Granted Jun 30, 2015·1 cites·6 claims
- 0556US12400833B2Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Granted Aug 26, 2025·0 cites·16 claims
- 0651US11915940B2Method of depositing a pre-etch protective layerAPPLIED MATERIALS INC·Filed 2021·Granted Feb 27, 2024·0 cites·11 claims
- 0750US2010186663A1Methods and apparatus for protecting a substrate support in a semiconductor process chamberAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 0849US12165877B2Methods for etching a material layer for semiconductor applicationsAPPLIED MATERIALS INC·Filed 2019·Granted Dec 10, 2024·0 cites·18 claims
- 0947US11551942B2Methods and apparatus for cleaning a substrate after processingAPPLIED MATERIALS INC·Filed 2020·Granted Jan 10, 2023·0 cites·17 claims
- 1046US2009272717A1Method and apparatus of a substrate etching system and processAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 1139US9039908B2Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched featuresFARR JON·Filed 2008·Granted May 26, 2015·0 cites·16 claims
- 1234US2011217832A1Method of filling a deep trench in a substrateRAORANE DIGVIJAY·Filed 2010·Application pending·0 cites
- 1328US10211030B2Source RF power split inner coil to improve BCD and etch depth performanceAPPLIED MATERIALS INC·Filed 2015·Granted Feb 19, 2019·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →