Inventor · disambiguated record
Barry P. Linder
Also filed as: LINDER BARRY · LINDER BARRY P · LINDER BARRY PAUL
70 granted patents·9 pending applications·344 citations·filing 2005–2023
99Inventor score
Top patents by PatentIndex Score
79 records- 0197US7432567B2Metal gate CMOS with at least a single gate metal and dual gate dielectricsIBM·Filed 2005·Granted Oct 7, 2008·58 cites·13 claims
- 0295US7696036B2CMOS transistors with differential oxygen content high-k dielectricsIBM·Filed 2007·Granted Apr 13, 2010·33 cites·7 claims
- 0393US9853179B2Reducing dark current in germanium photodiodes by electrical over-stressIBM·Filed 2016·Granted Dec 26, 2017·5 cites·20 claims
- 0493US8035173B2CMOS transistors with differential oxygen content high-K dielectricsIBM·Filed 2010·Granted Oct 11, 2011·14 cites·12 claims
- 0592US10229873B2Three plate MIM capacitor via integrity verificationIBM·Filed 2017·Granted Mar 12, 2019·4 cites·20 claims
- 0692US8815684B2Bulk finFET with super steep retrograde wellIBM·Filed 2012·Granted Aug 26, 2014·12 cites·25 claims
- 0792US7598545B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2005·Granted Oct 6, 2009·20 cites·28 claims
- 0891US9755100B2Reducing dark current in germanium photodiodes by electrical over-stressIBM·Filed 2016·Granted Sep 5, 2017·4 cites·19 claims
- 0991US7655994B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2005·Granted Feb 2, 2010·21 cites·19 claims
- 1090US9863994B2On-chip leakage measurementIBM·Filed 2016·Granted Jan 9, 2018·4 cites·20 claims
- 1190US9310424B2Monitoring aging of silicon in an integrated circuit deviceIBM·Filed 2013·Granted Apr 12, 2016·9 cites·18 claims
- 1290US7807525B2Low power circuit structure with metal gate and high-k dielectricIBM·Filed 2009·Granted Oct 5, 2010·15 cites·11 claims
- 1389US10360526B2Analytics to determine customer satisfactionIBM·Filed 2016·Granted Jul 23, 2019·5 cites·20 claims
- 1489US8713490B1Managing aging of silicon in an integrated circuit deviceIBM·Filed 2013·Granted Apr 29, 2014·12 cites·25 claims
- 1589US7709902B2Metal gate CMOS with at least a single gate metal and dual gate dielectricsIBM·Filed 2008·Granted May 4, 2010·11 cites·12 claims
- 1689US7666732B2Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectricsIBM·Filed 2008·Granted Feb 23, 2010·11 cites·14 claims
- 1788US7858500B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2008·Granted Dec 28, 2010·12 cites·20 claims
- 1887US10002810B2On-chip combined hot carrier injection and bias temperature instability monitorIBM·Filed 2015·Granted Jun 19, 2018·4 cites·20 claims
- 1986US8836037B2Structure and method to form input/output devicesANDO TAKASHI·Filed 2012·Granted Sep 16, 2014·7 cites·20 claims
- 2085US10043938B2Reducing dark current in germanium photodiodes by electrical over-stressIBM·Filed 2017·Granted Aug 7, 2018·2 cites·18 claims
- 2185US8809872B2Bulk finFET with super steep retrograde wellIBM·Filed 2013·Granted Aug 19, 2014·7 cites·8 claims
- 2285US8383483B2High performance CMOS circuits, and methods for fabricating sameIBM·Filed 2009·Granted Feb 26, 2013·10 cites·15 claims
- 2385US7723798B2Low power circuit structure with metal gate and high-k dielectricIBM·Filed 2007·Granted May 25, 2010·10 cites·10 claims
- 2483US9299802B2Method to improve reliability of high-K metal gate stacksIBM·Filed 2012·Granted Mar 29, 2016·4 cites·20 claims
- 2583US7611979B2Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacksIBM·Filed 2007·Granted Nov 3, 2009·8 cites·6 claims
- 2682US11276748B2Switchable metal insulator metal capacitorIBM·Filed 2019·Granted Mar 15, 2022·3 cites·21 claims
- 2781US9791499B2Circuit to detect previous use of computer chips using passive test wiresIBM·Filed 2015·Granted Oct 17, 2017·3 cites·11 claims
- 2881US7999323B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2009·Granted Aug 16, 2011·7 cites·18 claims
- 2980US11877458B2RRAM structures in the BEOLIBM·Filed 2020·Granted Jan 16, 2024·1 cites·9 claims
- 3080US10782336B2BTI degradation test circuitIBM·Filed 2016·Granted Sep 22, 2020·2 cites·25 claims
- 3180US9287185B1Determining appropriateness of sampling integrated circuit test data in the presence of manufacturing variationsIBM·Filed 2015·Granted Mar 15, 2016·3 cites·20 claims
- 3280US9006064B2Multi-plasma nitridation process for a gate dielectricIBM·Filed 2013·Granted Apr 14, 2015·3 cites·17 claims
- 3378US9866221B2Test circuit to isolate HCI degradationIBM·Filed 2016·Granted Jan 9, 2018·3 cites·22 claims
- 3477US9373501B2Hydroxyl group termination for nucleation of a dielectric metallic oxideIBM·Filed 2013·Granted Jun 21, 2016·3 cites·20 claims
- 3576US10102090B2Non-destructive analysis to determine use history of processorIBM·Filed 2016·Granted Oct 16, 2018·2 cites·20 claims
- 3675US10671958B2Analytics to determine customer satisfactionIBM·Filed 2019·Granted Jun 2, 2020·1 cites·18 claims
- 3773US10247769B2Measuring individual device degradation in CMOS circuitsIBM·Filed 2015·Granted Apr 2, 2019·1 cites·20 claims
- 3871US9952274B2Measurement for transistor output characteristics with and without self heatingIBM·Filed 2015·Granted Apr 24, 2018·1 cites·10 claims
- 3971US9634116B2Method to improve reliability of high-K metal gate stacksIBM·Filed 2016·Granted Apr 25, 2017·1 cites·20 claims
- 4070US10365702B2Autonomic supply voltage compensation for degradation of circuits over circuit lifetimeIBM·Filed 2017·Granted Jul 30, 2019·1 cites·19 claims
- 4169US10134732B2Reduction of negative bias temperature instabilityIBM·Filed 2014·Granted Nov 20, 2018·1 cites·6 claims
- 4269US9252232B2Multi-plasma nitridation process for a gate dielectricGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 2, 2016·1 cites·15 claims
- 4369US9196700B2Multi-plasma nitridation process for a gate dielectricGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 24, 2015·1 cites·16 claims
- 4467US11647681B2Fabrication of phase change memory cell in integrated circuitIBM·Filed 2020·Granted May 9, 2023·0 cites·5 claims
- 4567US10608138B2Reducing dark current in germanium photodiodes by electrical over-stressIBM·Filed 2018·Granted Mar 31, 2020·0 cites·13 claims
- 4666US7880243B2Simple low power circuit structure with metal gate and high-k dielectricIBM·Filed 2007·Granted Feb 1, 2011·3 cites·7 claims
- 4765US10901025B2Measuring individual device degradation in CMOS circuitsIBM·Filed 2018·Granted Jan 26, 2021·0 cites·20 claims
- 4864US10249785B2Reducing dark current in germanium photodiodes by electrical over-stressIBM·Filed 2017·Granted Apr 2, 2019·0 cites·12 claims
- 4963US10236407B2Reducing dark current in germanium photodiodes by electrical over-stressIBM·Filed 2017·Granted Mar 19, 2019·0 cites·12 claims
- 5062US10622355B2Reduction of negative bias temperature instabilityIBM·Filed 2018·Granted Apr 14, 2020·0 cites·16 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →