Inventor · disambiguated record
Wuyang Hao
Also filed as: HAO WUYANG
10 granted patents·2 pending applications·63 citations·filing 2010–2018
87Inventor score
Top patents by PatentIndex Score
12 records- 0193US8547736B2Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionRAO HARI M·Filed 2010·Granted Oct 1, 2013·19 cites·25 claims
- 0290US8493134B2Method and apparatus to provide a clock signal to a charge pumpHAO WUYANG·Filed 2010·Granted Jul 23, 2013·19 cites·44 claims
- 0381US8797792B2Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionQUALCOMM INC·Filed 2013·Granted Aug 5, 2014·6 cites·20 claims
- 0479US8638590B2Resistance based memory having two-diode access deviceHAO WUYANG·Filed 2010·Granted Jan 28, 2014·6 cites·14 claims
- 0576US8786355B2Low-power voltage reference circuitHAO WUYANG·Filed 2011·Granted Jul 22, 2014·5 cites·21 claims
- 0670US8488363B2Write energy conservation in memoryRAO HARI M·Filed 2010·Granted Jul 16, 2013·4 cites·18 claims
- 0764US9224467B2Resistance-based memory having two-diode access deviceQUALCOMM INC·Filed 2014·Granted Dec 29, 2015·2 cites·9 claims
- 0858US10706905B1Single path memory sense amplifier circuitGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 7, 2020·1 cites·20 claims
- 0956US10699763B2Merged write driver based on local source line MRAM architectureMARVELL INT LTD·Filed 2018·Granted Jun 30, 2020·1 cites·19 claims
- 1041US10482933B2Column multiplexor decodingGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 19, 2019·0 cites·13 claims
- 1138US2015279451A1Edge-triggered pulse latchQUALCOMM INC·Filed 2014·Application pending·0 cites
- 1234US2013028010A1Fast MTJ Switching Write Circuit For MRAM ArrayQUALCOMM INC·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →