Inventor · disambiguated record
Muhammad Chaudhry
Also filed as: CHAUDHRY MUHAMMAD · CHAUDHRY MUHAMMAD I · CHAUDHRY MUHAMMAD IQBAL
14 granted patents·2 pending applications·215 citations·filing 2004–2020
92Inventor score
Top patents by PatentIndex Score
16 records- 0198US7996746B2Structured low-density parity-check (LDPC) codeNORTEL NETWORKS LTD·Filed 2005·Granted Aug 9, 2011·100 cites·12 claims
- 0295US7208795B2Low-cost, low-voltage single-layer polycrystalline EEPROM memory cell integration into BiCMOS technologyATMEL CORP·Filed 2005·Granted Apr 24, 2007·67 cites·28 claims
- 0392US8024641B2Structured low-density parity-check (LDPC) codeNORTEL NETWORKS LTD·Filed 2010·Granted Sep 20, 2011·10 cites·17 claims
- 0485US8301975B2Structured low-density parity-check (LDPC) codeLIVSHITZ MICHAEL·Filed 2011·Granted Oct 30, 2012·6 cites·12 claims
- 0578US9997509B2Electrostatic discharge (ESD) protection circuitRF MICRO DEVICES INC·Filed 2015·Granted Jun 12, 2018·3 cites·18 claims
- 0678USRE46692EStructured low-density parity-check (LDPC) codeBLACKBERRY LTD·Filed 2014·Granted Jan 30, 2018·3 cites·12 claims
- 0772USRE48212EStructured low-density parity-check (LDPC) codeBLACKBERRY LTD·Filed 2017·Granted Sep 15, 2020·1 cites·33 claims
- 0870USRE49225EStructured low-density parity-check (LDPC) codeBLACKBERRY LTD·Filed 2020·Granted Sep 27, 2022·0 cites·24 claims
- 0964US7408812B2Low-voltage single-layer polysilicon EEPROM memory cellATMEL CORP·Filed 2006·Granted Aug 5, 2008·2 cites·7 claims
- 1064US7091075B2Fabrication of an EEPROM cell with SiGe source/drain regionsATMEL CORP·Filed 2004·Granted Aug 15, 2006·8 cites·26 claims
- 1164US6875648B1Fabrication of an EEPROM cell with emitter-polysilicon source/drain regionsATMEL CORP·Filed 2004·Granted Apr 5, 2005·10 cites·10 claims
- 1254US7144775B2Low-voltage single-layer polysilicon eeprom memory cellATMEL CORP·Filed 2004·Granted Dec 5, 2006·5 cites·12 claims
- 1348US10461529B2Trigger circuitry for electrostatic discharge (ESD) protectionRF MICRO DEVICES INC·Filed 2016·Granted Oct 29, 2019·0 cites·19 claims
- 1447US2006244073A1FABRICATION OF AN EEPROM CELL WITH SiGe SOURCE/DRAIN REGIONSATMEL CORP·Filed 2006·Application pending·0 cites
- 1545US7256445B2Fabrication of an EEPROM cell with emitter-polysilicon source/drain regionsATMEL CORP·Filed 2005·Granted Aug 14, 2007·0 cites·6 claims
- 1645US2007087550A1Low-voltage single-layer polysilicon eeprom memory cellATMEL CORP·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →