Inventor · disambiguated record
Alessandro Torsi
Also filed as: TORSI ALESSANDRO
25 granted patents·116 citations·filing 1998–2015
95Inventor score
Top patents by PatentIndex Score
25 records- 0197US9112138B2Methods of forming resistive memory elementsRAMASWAMY D V NIRMAL·Filed 2012·Granted Aug 18, 2015·23 cites·17 claims
- 0286US9419220B2Resistive memory elements, resistive memory cells, and resistive memory devicesMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 16, 2016·4 cites·20 claims
- 0384US8610490B2Voltage switching in a memory deviceMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 17, 2013·5 cites·21 claims
- 0483US8787065B2Apparatuses and methods for determining stability of a memory cellTORSI ALESSANDRO·Filed 2011·Granted Jul 22, 2014·8 cites·43 claims
- 0583US8164950B2Reduction of punch-through disturb during programming of a memory deviceTORSI ALESSANDRO·Filed 2010·Granted Apr 24, 2012·8 cites·22 claims
- 0682US8203876B2Reducing effects of erase disturb in a memory deviceGODA AKIRA·Filed 2009·Granted Jun 19, 2012·11 cites·14 claims
- 0782US8059474B2Reducing read failure in a memory deviceARITOME SEIICHI·Filed 2010·Granted Nov 15, 2011·6 cites·11 claims
- 0880US8705290B2Memory device having improved programming operationDAMLE PRASHANT S·Filed 2012·Granted Apr 22, 2014·6 cites·20 claims
- 0977US7684243B2Reducing read failure in a memory deviceMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 23, 2010·8 cites·18 claims
- 1076US7990772B2Memory device having improved programming operationMICRON TECHNOLOGY INC·Filed 2009·Granted Aug 2, 2011·7 cites·14 claims
- 1176US7733705B2Reduction of punch-through disturb during programming of a memory deviceMICRON TECHNOLOGY INC·Filed 2008·Granted Jun 8, 2010·8 cites·20 claims
- 1263US8565018B2Reducing effects of erase disturb in a memory deviceGODA AKIRA·Filed 2012·Granted Oct 22, 2013·2 cites·20 claims
- 1362US8139419B2Programming methods and memoriesIMONDI GIULIANO G·Filed 2009·Granted Mar 20, 2012·4 cites·22 claims
- 1460US6911862B2Ultra-low current band-gap referenceMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 28, 2005·9 cites·37 claims
- 1554US8331160B2Memory device having improved programming operationDAMLE PRASHANT S·Filed 2011·Granted Dec 11, 2012·1 cites·22 claims
- 1646US10515696B2Apparatuses and methods for determining stability of a memory cellMICRON TECHNOLOGY INC·Filed 2014·Granted Dec 24, 2019·0 cites·16 claims
- 1746US8859329B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 14, 2014·0 cites·13 claims
- 1845US8891309B2Reducing read failure in a memory deviceARITOME SEIICHI·Filed 2011·Granted Nov 18, 2014·0 cites·20 claims
- 1945US8753919B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 17, 2014·0 cites·9 claims
- 2045US6801079B2Ultra-low current band-gap referenceMICRON TECHNOLOGY INC·Filed 2003·Granted Oct 5, 2004·3 cites·22 claims
- 2144US8629421B1Memory cellsMICRON TECHNOLOGY INC·Filed 2012·Granted Jan 14, 2014·0 cites·17 claims
- 2243US8405444B2Voltage switching in a memory deviceMAROTTA GIULIO G·Filed 2012·Granted Mar 26, 2013·0 cites·20 claims
- 2342US8451661B2Programming methods and memoriesIMONDI GIULIANO G·Filed 2012·Granted May 28, 2013·0 cites·20 claims
- 2441US8217705B2Voltage switching in a memory deviceMAROTTA GIULIO G·Filed 2010·Granted Jul 10, 2012·0 cites·30 claims
- 2523US6110781AAnisotropic chemical etching process of silicon oxide in the manufacture of MOS transistor flash EPROM devicesTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 29, 2000·3 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →