Inventor · disambiguated record
Jozef Mitros
Also filed as: MITROS JOZEF · MITROS JOZEF C · MITROS JOZEF CZESLAW
34 granted patents·2 pending applications·448 citations·filing 1993–2011
97Inventor score
Files withTEXAS INSTRUMENTS INC29TEXAS INSTRUMENTS DEUTSCHLAND2WU XIAOJU2MITROS JOZEF C1MITROS JOZEF CZESLAW1
Top patents by PatentIndex Score
36 records- 0194US7471570B2Embedded EEPROM array techniques for higher densityTEXAS INSTRUMENTS INC·Filed 2005·Granted Dec 30, 2008·40 cites·43 claims
- 0294US6424005B1LDMOS power device with oversized dwellTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 23, 2002·140 cites·11 claims
- 0391US6548874B1Higher voltage transistors for sub micron CMOS processesTEXAS INSTRUMENTS INC·Filed 2000·Granted Apr 15, 2003·86 cites·32 claims
- 0487US7919368B2Area-efficient electrically erasable programmable memory cellTEXAS INSTRUMENTS INC·Filed 2009·Granted Apr 5, 2011·13 cites·7 claims
- 0581US7157784B2Drain extended MOS transistors with multiple capacitors and methods of fabricationTEXAS INSTRUMENTS INC·Filed 2005·Granted Jan 2, 2007·8 cites·8 claims
- 0681US6660603B2Higher voltage drain extended MOS transistors with self-aligned channel and drain extensionsTEXAS INSTRUMENTS INC·Filed 2001·Granted Dec 9, 2003·29 cites·12 claims
- 0780US8581324B2Area-efficient electrically erasable programmable memory cellWU XIAOJU·Filed 2011·Granted Nov 12, 2013·5 cites·12 claims
- 0879US7253054B2One time programmable EPROM for advanced CMOS technologyTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 7, 2007·7 cites·16 claims
- 0979US6747308B2Single poly EEPROM with reduced areaTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 8, 2004·27 cites·14 claims
- 1078US6873021B1MOS transistors having higher drain current without reduced breakdown voltageTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 29, 2005·26 cites·20 claims
- 1172US7344947B2Methods of performance improvement of HVMOS devicesTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 18, 2008·6 cites·21 claims
- 1272US7279738B2Semiconductor device with an analog capacitorTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 9, 2007·5 cites·9 claims
- 1366US7785906B2Method to detect poly residues in LOCOS processTEXAS INSTRUMENTS INC·Filed 2007·Granted Aug 31, 2010·2 cites·19 claims
- 1464US7166903B2Drain extended MOS transistors with multiple capacitors and methods of fabricationTEXAS INSTRUMENTS INC·Filed 2006·Granted Jan 23, 2007·2 cites·5 claims
- 1561US8067795B2Single poly EEPROM without separate control gate nor erase regionsMITROS JOZEF CZESLAW·Filed 2007·Granted Nov 29, 2011·3 cites·27 claims
- 1659US6930005B2Low cost fabrication method for high voltage, high drain current MOS transistorTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 16, 2005·9 cites·25 claims
- 1754US7244651B2Fabrication of an OTP-EPROM having reduced leakage currentTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 17, 2007·6 cites·23 claims
- 1849US7307309B2EEPROM with etched tunneling windowTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 11, 2007·4 cites·22 claims
- 1948US5394101AMethod for detecting mobile ions in a semiconductor deviceNAT SEMICONDUCTOR CORP·Filed 1993·Granted Feb 28, 1995·20 cites·11 claims
- 2047US8125830B2Area-efficient electrically erasable programmable memory cellWU XIAOJU·Filed 2011·Granted Feb 28, 2012·0 cites·1 claims
- 2147US7813177B2Analog single-poly EEPROM incorporating two tunneling regions for programming the memory deviceTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 12, 2010·1 cites·24 claims
- 2247US7060556B1Drain extended MOS transistors with multiple capacitors and methods of fabricationTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 13, 2006·0 cites·7 claims
- 2344US6979615B2System and method for forming a semiconductor with an analog capacitor using fewer structure stepsTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 27, 2005·2 cites·10 claims
- 2443US7396722B2Memory device with reduced cell areaTEXAS INSTRUMENTS INC·Filed 2006·Granted Jul 8, 2008·0 cites·20 claims
- 2543US7045418B2Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·2 cites·22 claims
- 2642US7045425B2Bird's beak-less or STI-less OTP EPROMTEXAS INSTRUMENTS INC·Filed 2004·Granted May 16, 2006·1 cites·20 claims
- 2741US6897113B2Single poly EEPROM with improved coupling ratioTEXAS INSTRUMENTS INC·Filed 2004·Granted May 24, 2005·1 cites·6 claims
- 2841US6770933B2Single poly eeprom with improved coupling ratioTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 3, 2004·1 cites·13 claims
- 2939US8946805B2Reduced area single poly EEPROMMITROS JOZEF C·Filed 2009·Granted Feb 3, 2015·0 cites·20 claims
- 3039US7498219B2Methods for reducing capacitor dielectric absorption and voltage coefficientTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 3, 2009·0 cites·30 claims
- 3139US6734491B1EEPROM with reduced manufacturing complexityTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2002·Granted May 11, 2004·2 cites·5 claims
- 3238US6806541B2Field effect transistor with improved isolation structuresTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 19, 2004·0 cites·4 claims
- 3338US2010177569A1Single poly eeprom allowing continuous adjustment of its threshold voltageTEXAS INSTRUMENTS INC·Filed 2010·Application pending·0 cites
- 3437US7019356B2Memory device with reduced cell areaTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 28, 2006·0 cites·16 claims
- 3535US6730569B2Field effect transistor with improved isolation structuresTEXAS INSTRUMENTS INC·Filed 2001·Granted May 4, 2004·0 cites·14 claims
- 3632US2004175891A1EEPROM with reduced manufacturing complexityTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →