Inventor · disambiguated record
Ralf Van Bentum
Also filed as: VAN BENTUM RALF
19 granted patents·5 pending applications·327 citations·filing 2001–2021
95Inventor score
Files withADVANCED MICRO DEVICES INC11GLOBALFOUNDRIES INC6VAN BENTUM RALF3GLOBALFOUNDRIES US INC1MOHAPATRA NIHAR-RANJAN1
Top patents by PatentIndex Score
24 records- 0194US7138320B2Advanced technique for forming a transistor having raised drain and source regionsADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 21, 2006·82 cites·12 claims
- 0292US6495402B1Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufactureADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 17, 2002·58 cites·13 claims
- 0387US9293556B2Semiconductor structure including a ferroelectric transistor and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 22, 2016·10 cites·11 claims
- 0485US9536992B2Semiconductor structure including a ferroelectric transistor and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·5 cites·16 claims
- 0584US6787852B1Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regionsADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·27 cites·10 claims
- 0683US9368605B2Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 14, 2016·8 cites·14 claims
- 0783US7176110B2Technique for forming transistors having raised drain and source regions with different heightsADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 13, 2007·32 cites·4 claims
- 0880US6774436B1SOI MOSFET with asymmetrical source/body and drain/body junctionsADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 10, 2004·27 cites·15 claims
- 0978US6548369B1Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simoxADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 15, 2003·27 cites·18 claims
- 1073US7754555B2Transistor having a channel with biaxial strain induced by silicon/germanium in the gate electrodeGLOBALFOUNDRIES INC·Filed 2007·Granted Jul 13, 2010·5 cites·8 claims
- 1166US6943088B2Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner roundingADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 13, 2005·14 cites·30 claims
- 1266US6465313B1SOI MOSFET with graded source/drain silicideADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·13 cites·21 claims
- 1364US7528026B2Method for reducing silicide defects by removing contaminants prior to drain/source activationADVANCED MICRO DEVICES INC·Filed 2006·Granted May 5, 2009·2 cites·16 claims
- 1463US7064074B2Technique for forming contacts for buried doped regions in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 20, 2006·11 cites·22 claims
- 1554US8431455B2Method of improving memory cell device by ion implantationVAN BENTUM RALF·Filed 2011·Granted Apr 30, 2013·1 cites·18 claims
- 1651US8158486B2Trench isolation structure having different stressVAN BENTUM RALF·Filed 2006·Granted Apr 17, 2012·1 cites·29 claims
- 1751US7144786B2Technique for forming a transistor having raised drain and source regions with a reduced number of process stepsADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 5, 2006·4 cites·7 claims
- 1844US9412600B2Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistorGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 9, 2016·0 cites·45 claims
- 1944US2016247811A1Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 2042US2009242996A1Soi transistor with floating body for information storage having asymmetric drain/source regionsVAN BENTUM RALF·Filed 2009·Application pending·0 cites
- 2141US2023209795A1Sram bit cellsGLOBALFOUNDRIES US INC·Filed 2021·Application pending·0 cites
- 2240US2009166738A1Ram cell including a transistor with floating body for information storage having asymmetric drain/source extensionsMOHAPATRA NIHAR-RANJAN·Filed 2008·Application pending·0 cites
- 2338US8697530B2Drain/source extension structure of a field effect transistor with reduced boron diffusionPRUEFER EKKEHARD·Filed 2007·Granted Apr 15, 2014·0 cites·20 claims
- 2436US2004038495A1Method of providing a thick thermal oxide in trench isolationFiled 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →