Inventor · disambiguated record
Norihisa Arai
Also filed as: ARAI NORIHISA
30 granted patents·8 pending applications·561 citations·filing 1994–2015
97Inventor score
Top patents by PatentIndex Score
38 records- 0188US6680230B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2002·Granted Jan 20, 2004·36 cites·19 claims
- 0286US6534867B1Semiconductor device, semiconductor element and method for producing sameTOSHIBA KK·Filed 2000·Granted Mar 18, 2003·34 cites·6 claims
- 0382US6828627B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Dec 7, 2004·23 cites·19 claims
- 0481US6703669B1Semiconductor device having serially connected memory cell transistors provided between two current terminalsTOSHIBA KK·Filed 2000·Granted Mar 9, 2004·23 cites·18 claims
- 0580US5716863AMethod of manufacturing semiconductor device having elements different in gate oxide thickness and resistive elementsTOSHIBA KK·Filed 1996·Granted Feb 10, 1998·46 cites·20 claims
- 0676US5389808ANon-volatile semiconductor memory with increased capacitance between floating and control gatesTOSHIBA KK·Filed 1994·Granted Feb 14, 1995·39 cites·22 claims
- 0775US6020229ASemiconductor device method for manufacturingTOSHIBA KK·Filed 1997·Granted Feb 1, 2000·36 cites·18 claims
- 0874US6521927B2Semiconductor device and method for the manufacture thereofTOSHIBA KK·Filed 1998·Granted Feb 18, 2003·41 cites·8 claims
- 0974US5841174ASemiconductor apparatus including semiconductor devices operated by plural power suppliesKABUSHIKI KAISA TOSHIBA·Filed 1995·Granted Nov 24, 1998·37 cites·17 claims
- 1073US5962891ANonvolatile semiconductor memory deviceTOSBHIA KK·Filed 1996·Granted Oct 5, 1999·34 cites·13 claims
- 1173US5469397ASemiconductor memory device with a reference potential generatorTOSHIBA KK·Filed 1994·Granted Nov 21, 1995·42 cites·8 claims
- 1272US6927116B2Semiconductor device having a double-well structure and method for manufacturing the sameTOSHIBA KK·Filed 2001·Granted Aug 9, 2005·15 cites·12 claims
- 1371US9576881B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Feb 21, 2017·2 cites·19 claims
- 1470US6699726B2Semiconductor device and method for the manufacture thereofTOSHIBA KK·Filed 2003·Granted Mar 2, 2004·15 cites·2 claims
- 1569US6034567ASemiconductor integrated circuit device provided with a differential amplifierTOSHIBA KK·Filed 1998·Granted Mar 7, 2000·29 cites·28 claims
- 1667US6656800B2Method of manufacturing semiconductor device including process for implanting impurities into substrate via MOS transistor gate electrode and gate insulation filmTOSHIBA KK·Filed 2001·Granted Dec 2, 2003·9 cites·17 claims
- 1762US9147641B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Sep 29, 2015·2 cites·8 claims
- 1862US6342719B1Semiconductor device having a double-well structure and method for manufacturing the sameTOSHIBA KK·Filed 1997·Granted Jan 29, 2002·18 cites·29 claims
- 1960US9705009B2Semiconductor deviceTOSHIBA KK·Filed 2013·Granted Jul 11, 2017·1 cites·13 claims
- 2060US6461921B1Semiconductor device having channel stopper portions integrally formed as part of a wellTOSHIBA KK·Filed 2000·Granted Oct 8, 2002·8 cites·8 claims
- 2160US6333548B1Semiconductor device with etch stopping filmTOSHIBA KK·Filed 1999·Granted Dec 25, 2001·18 cites·6 claims
- 2256US8399953B2Semiconductor device and method for manufacturing the sameKUTSUKAKE HIROYUKI·Filed 2010·Granted Mar 19, 2013·1 cites·14 claims
- 2356US7238563B2Semiconductor device having isolation region and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jul 3, 2007·4 cites·17 claims
- 2455US6084283ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Jul 4, 2000·16 cites·8 claims
- 2554US8013381B2Semiconductor deviceTOSHIBA KK·Filed 2009·Granted Sep 6, 2011·2 cites·17 claims
- 2651US2007252236A1Semiconductor device having isolation region and method of manufacturing the sameARAI NORIHISA·Filed 2007·Application pending·0 cites
- 2749US6111295ASemiconductor device having channel stopper portions integrally formed as part of a wellTOSHIBA KK·Filed 1998·Granted Aug 29, 2000·13 cites·28 claims
- 2849US2006202285A1Semiconductor device, semiconductor element and method for producing sameTOSHIBA KK·Filed 2006·Application pending·0 cites
- 2948US7813179B2Semiconductor memory device having plural word lines arranged at narrow pitch and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Oct 12, 2010·0 cites·10 claims
- 3048US5933731ASemiconductor device having gate oxide films having different thicknesses and manufacturing method thereofTOSHIBA KK·Filed 1997·Granted Aug 3, 1999·17 cites·10 claims
- 3143US7087960B2Semiconductor device including impurities in substrate via MOS transistor gate electrode and gate insulation filmTOSHIBA KK·Filed 2003·Granted Aug 8, 2006·0 cites·13 claims
- 3241US2003098509A1Semiconductor device, semiconductor element and method for producing sameTOSHIBA KK·Filed 2003·Application pending·0 cites
- 3340US2009039408A1Nonvolatile semiconductor memory and manufacturing method thereofHATANO TOMOAKI·Filed 2008·Application pending·0 cites
- 3440US2005073008A1Semiconductor deviceTOSHIBA KK·Filed 2004·Application pending·0 cites
- 3539US2011073933A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2010·Application pending·0 cites
- 3633US8390076B2Semiconductor device and manufacturing method thereofSUZUKI ATSUHIRO·Filed 2009·Granted Mar 5, 2013·0 cites·12 claims
- 3731US2011233680A1Nonvolatile memory device and method for manufacturing sameTOSHIBA KK·Filed 2010·Application pending·0 cites
- 3829US2011233637A1Semiconductor device and method for manufacturing the sameHATANO TOMOAKI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →