Inventor · disambiguated record
Domingo A. Ferrer
Also filed as: FERRER DOMINGO · FERRER DOMINGO A
13 granted patents·7 pending applications·50 citations·filing 2013–2024
88Inventor score
Top patents by PatentIndex Score
20 records- 0196US11187852B1Bragg gratings with silicide-coated segmentsGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 30, 2021·5 cites·20 claims
- 0292US9691658B1Contact fill in an integrated circuitGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 27, 2017·18 cites·15 claims
- 0392US9224675B1Automatic capacitance tuning for robust middle of the line contact and silicide applicationsIBM·Filed 2014·Granted Dec 29, 2015·18 cites·20 claims
- 0484US9859403B1Multiple step thin film deposition method for high conformalityGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 2, 2018·4 cites·19 claims
- 0575US10170359B2Diffusion barrier layer formationIBM·Filed 2017·Granted Jan 1, 2019·1 cites·11 claims
- 0671US10096609B2Modified tungsten siliconGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 9, 2018·2 cites·18 claims
- 0771US9847251B2Diffusion barrier layer formationIBM·Filed 2016·Granted Dec 19, 2017·1 cites·7 claims
- 0866US9633946B1Seamless metallization contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·1 cites·20 claims
- 0960US2018374746A1Diffusion barrier layer formationIBM·Filed 2018·Application pending·0 cites
- 1058US9406554B2Diffusion barrier layer formationIBM·Filed 2014·Granted Aug 2, 2016·0 cites·9 claims
- 1158US2024429166A1Trench isolation structures for backside contactsIBM·Filed 2023·Application pending·0 cites
- 1256US10319633B2Diffusion barrier layer formationIBM·Filed 2016·Granted Jun 11, 2019·0 cites·8 claims
- 1356US2025380455A1Stacked field-effect transistors with asymmetric source/drain regionsIBM·Filed 2024·Application pending·0 cites
- 1456US2024332295A1Field effect transistor high aspect ratio patterningIBM·Filed 2023·Application pending·0 cites
- 1555US2025294887A1Self-aligned isolation layer for stacked field-effect transistorsIBM·Filed 2024·Application pending·0 cites
- 1652US2025031440A1Multi-silicide stacked field-effect transistorsIBM·Filed 2023·Application pending·0 cites
- 1751US11239336B2Integrated circuit structure with niobium-based silicide layer and methods to form sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Feb 1, 2022·0 cites·12 claims
- 1847US9293365B2Hardmask removal for copper interconnects with tungsten contacts by chemical mechanical polishingIBM·Filed 2014·Granted Mar 22, 2016·0 cites·20 claims
- 1939US2015111374A1Surface treatment in a dep-etch-dep processIBM·Filed 2013·Application pending·0 cites
- 2037US10192822B2Modified tungsten siliconGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 29, 2019·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →