Inventor · disambiguated record
John Claassen Roberts
Also filed as: ROBERTS JOHN C · ROBERTS JOHN CLAASSEN
23 granted patents·10 pending applications·972 citations·filing 1996–2022
96Inventor score
Files withNITRONEX CORP10M/A-COM TECH SOLUTIONS HOLDINGS INC9MACOM TECH SOLUTIONS HOLDINGS INC7INT RECTIFIER CORP3PINER EDWIN L2
Top patents by PatentIndex Score
33 records- 0197US7365374B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2005·Granted Apr 29, 2008·52 cites·19 claims
- 0295US5684309AStacked quantum well aluminum indium gallium nitride light emitting diodesUNIV NORTH CAROLINA STATE·Filed 1996·Granted Nov 4, 1997·471 cites·26 claims
- 0393US9627473B2Parasitic channel mitigation in III-nitride material semiconductor structuresM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Apr 18, 2017·9 cites·18 claims
- 0493US7352016B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2006·Granted Apr 1, 2008·23 cites·19 claims
- 0593US7352015B2Gallium nitride materials and methods associated with the sameNITRONEX CORP·Filed 2005·Granted Apr 1, 2008·17 cites·47 claims
- 0693US7247889B2III-nitride material structures including silicon substratesNITRONEX CORP·Filed 2004·Granted Jul 24, 2007·83 cites·32 claims
- 0792US7791106B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Sep 7, 2010·17 cites·12 claims
- 0892US7339205B2Gallium nitride materials and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Mar 4, 2008·43 cites·29 claims
- 0991US9673281B2Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regionsM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Jun 6, 2017·6 cites·16 claims
- 1091US7135720B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Nov 14, 2006·50 cites·81 claims
- 1190US5851905AMethods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flowsUNIV NORTH CAROLINA STATE·Filed 1997·Granted Dec 22, 1998·160 cites·13 claims
- 1289US9773898B2III-nitride semiconductor structures comprising spatially patterned implanted speciesM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Sep 26, 2017·5 cites·13 claims
- 1387US9799520B2Parasitic channel mitigation via back side implantationMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Oct 24, 2017·4 cites·21 claims
- 1481US9704705B2Parasitic channel mitigation via reaction with active speciesM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Jul 11, 2017·3 cites·17 claims
- 1581US7687827B2III-nitride materials including low dislocation densities and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Mar 30, 2010·21 cites·37 claims
- 1671US7569871B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Aug 4, 2009·3 cites·20 claims
- 1768US8748298B2Gallium nitride materials and methods associated with the samePINER EDWIN L·Filed 2008·Granted Jun 10, 2014·2 cites·15 claims
- 1867US10211294B2III-nitride semiconductor structures comprising low atomic mass speciesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Feb 19, 2019·1 cites·20 claims
- 1963US8343824B2Gallium nitride material processing and related device structuresINT RECTIFIER CORP·Filed 2008·Granted Jan 1, 2013·1 cites·27 claims
- 2061US7994540B2Gallium nitride material transistors and methods associated with the sameINT RECTIFIER CORP·Filed 2009·Granted Aug 9, 2011·1 cites·20 claims
- 2154US10096701B2Gallium nitride materials and methods associated with the samePINER EDWIN L·Filed 2008·Granted Oct 9, 2018·0 cites·18 claims
- 2251US2018026098A1Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regionsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 2351US2018122928A1Iii-nitride semiconductor structures comprising spatially patterned implanted speciesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 2451US2024355619A1Semiconductor material wafers optimized for linear amplifiersMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2022·Application pending·0 cites
- 2551US2018158685A1Parasitic channel mitigation via back side implantationMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 2650US8368117B2III-nitride materials including low dislocation densities and methods associated with the sameINT RECTIFIER CORP·Filed 2010·Granted Feb 5, 2013·0 cites·6 claims
- 2746US11018220B2Device isolation design rules for HAST improvementMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Granted May 25, 2021·0 cites·18 claims
- 2838US2019013196A1Parasitic channel mitigation via reaction with active speciesM/A COM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 2936US2005145851A1Gallium nitride material structures including isolation regions and methodsNITRONEX CORP·Filed 2004·Application pending·0 cites
- 3035US2017069716A1Parasitic channel mitigation using aluminum nitride diffusion barrier regionsM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Application pending·0 cites
- 3135US2017069500A1Methods of spatially implanting species in iii-nitride semiconductor structuresM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Application pending·0 cites
- 3234US2017069744A1Parasitic channel mitigation via counterdopant profile matchingM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Application pending·0 cites
- 3334US2017069742A1Parasitic channel mitigation via implantation of low atomic mass speciesM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →