Inventor · disambiguated record
Darrell Rinerson
Also filed as: RINERSON DARRELL · RINERSON DARRELL D
109 granted patents·11 pending applications·5,335 citations·filing 1983–2021
99Inventor score
Files withUNITY SEMICONDUCTOR CORP88RINERSON DARRELL8HEFEI RELIANCE MEMORY LTD7MICRON TECHNOLOGY INC5ADVANCED MICRO DEVICES INC2
Top patents by PatentIndex Score
120 records- 0199US6753561B1Cross point memory array using multiple thin filmsUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Jun 22, 2004·425 cites·34 claims
- 0298US7701791B2Low read current architecture for memoryUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Apr 20, 2010·73 cites·15 claims
- 0398US7538338B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 26, 2009·144 cites·30 claims
- 0498US7379364B2Sensing a signal in a two-terminal memory array having leakage currentUNITY SEMICONDUCTOR CORP·Filed 2006·Granted May 27, 2008·99 cites·24 claims
- 0598US7372753B1Two-cycle sensing in a two-terminal memory array having leakage currentUNITY SEMICONDUCTOR CORP·Filed 2006·Granted May 13, 2008·109 cites·25 claims
- 0698US7149108B2Memory array of a non-volatile RAMUNITY SEMICONDUCTOR CORP·Filed 2005·Granted Dec 12, 2006·73 cites·26 claims
- 0798US7054183B2Adaptive programming technique for a re-writable conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2005·Granted May 30, 2006·104 cites·8 claims
- 0898US7020006B2Discharge of conductive array lines in fast memoryUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Mar 28, 2006·195 cites·43 claims
- 0998US6965137B2Multi-layer conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Nov 15, 2005·168 cites·45 claims
- 1098US6859382B2Memory array of a non-volatile ramUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 22, 2005·133 cites·15 claims
- 1198US6834008B2Cross point memory array using multiple modes of operationUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·161 cites·17 claims
- 1298US5801985AMemory system having programmable control parametersMICRON TECHNOLOGY INC·Filed 1995·Granted Sep 1, 1998·286 cites·70 claims
- 1397US8270193B2Local bit lines and methods of selecting the same to access memory elements in cross-point arraysSIAU CHANG HUA·Filed 2010·Granted Sep 18, 2012·39 cites·23 claims
- 1497US7888711B2Continuous plane of thin-film materials for a two-terminal cross-point memoryUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Feb 15, 2011·41 cites·20 claims
- 1597US7884349B2Selection device for re-writable memoryUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Feb 8, 2011·76 cites·39 claims
- 1697US7742323B2Continuous plane of thin-film materials for a two-terminal cross-point memoryUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Jun 22, 2010·56 cites·31 claims
- 1797US7400006B1Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 15, 2008·58 cites·24 claims
- 1897US7067862B2Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 27, 2006·142 cites·43 claims
- 1997US6917539B2High-density NVRAMUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 12, 2005·134 cites·52 claims
- 2097US6870755B2Re-writable memory with non-linear memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 22, 2005·137 cites·18 claims
- 2197US6856536B2Non-volatile memory with a single transistor and resistive memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 15, 2005·170 cites·8 claims
- 2297US6836421B2Line drivers that fit within a specified line pitchUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Dec 28, 2004·149 cites·21 claims
- 2396US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 2496US7985963B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Jul 26, 2011·36 cites·33 claims
- 2596US6970375B2Providing a reference voltage to a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Nov 29, 2005·108 cites·16 claims
- 2696US6940744B2Adaptive programming technique for a re-writable conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Sep 6, 2005·100 cites·37 claims
- 2795US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 2895US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 2995US8675389B2Memory element with a reactive metal layerCHEVALLIER CHRISTOPHE·Filed 2011·Granted Mar 18, 2014·13 cites·28 claims
- 3095US8003511B2Memory cell formation using ion implant isolated conductive metal oxideUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Aug 23, 2011·26 cites·43 claims
- 3195US7897951B2Continuous plane of thin-film materials for a two-terminal cross-point memoryUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Mar 1, 2011·27 cites·14 claims
- 3295US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 3395US7227775B2Two terminal memory array having reference cellsUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jun 5, 2007·30 cites·18 claims
- 3495US6992922B2Cross point memory array exhibiting a characteristic hysteresisUNITY SEMICONDUCTOR CORP·Filed 2005·Granted Jan 31, 2006·36 cites·11 claims
- 3595US6850455B2Multiplexor having a reference voltage on unselected linesUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Feb 1, 2005·106 cites·25 claims
- 3694US7436723B2Method for two-cycle sensing in a two-terminal memory array having leakage currentUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Oct 14, 2008·30 cites·25 claims
- 3794US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 3894US7075817B2Two terminal memory array having reference cellsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 11, 2006·66 cites·27 claims
- 3994US7071008B2Multi-resistive state material that uses dopantsUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 4, 2006·69 cites·22 claims
- 4094US7057914B2Cross point memory array with fast access timeUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 6, 2006·72 cites·9 claims
- 4194US7038935B22-terminal trapped charge memory device with voltage switchable multi-level resistanceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted May 2, 2006·85 cites·46 claims
- 4293US8062942B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2008·Granted Nov 22, 2011·17 cites·19 claims
- 4393US7995371B2Threshold device for a memory arrayUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Aug 9, 2011·30 cites·39 claims
- 4493US7505347B2Method for sensing a signal in a two-terminal memory array having leakage currentUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Mar 17, 2009·26 cites·25 claims
- 4593US7009909B2Line drivers that use minimal metal layersUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 7, 2006·78 cites·26 claims
- 4693US6850429B2Cross point memory array with memory plugs exhibiting a characteristic hysteresisUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Feb 1, 2005·73 cites·16 claims
- 4793US6831854B2Cross point memory array using distinct voltagesUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 14, 2004·72 cites·17 claims
- 4892US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 4992US7082052B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 25, 2006·35 cites·15 claims
- 5092US7079442B2Layout of driver sets in a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 18, 2006·71 cites·37 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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