Inventor · disambiguated record
Faivel Pintchovski
Also filed as: PINTCHOVSKI FAIVEL · PINTCHOVSKI FAIVEL S
14 granted patents·1 pending application·505 citations·filing 1985–2007
94Inventor score
Top patents by PatentIndex Score
15 records- 0191US4822753AMethod for making a w/tin contactMOTOROLA INC·Filed 1988·Granted Apr 18, 1989·100 cites·14 claims
- 0286US5356833AProcess for forming an intermetallic member on a semiconductor substrateMOTOROLA INC·Filed 1993·Granted Oct 18, 1994·69 cites·20 claims
- 0382US6949457B1Barrier enhancementKLA TENCOR TECH CORP·Filed 2004·Granted Sep 27, 2005·28 cites·16 claims
- 0480US4619038ASelective titanium silicide formationMOTOROLA INC·Filed 1985·Granted Oct 28, 1986·44 cites·13 claims
- 0579US7226856B1Nano-electrode-array for integrated circuit interconnectsKLA TENCOR TECH CORP·Filed 2004·Granted Jun 5, 2007·23 cites·8 claims
- 0678US5126283AProcess for the selective encapsulation of an electrically conductive structure in a semiconductor deviceMOTOROLA INC·Filed 1990·Granted Jun 30, 1992·68 cites·15 claims
- 0773US5227340AProcess for fabricating semiconductor devices using a solid reactant sourceMOTOROLA INC·Filed 1991·Granted Jul 13, 1993·27 cites·9 claims
- 0868US5429989AProcess for fabricating a metallization structure in a semiconductor deviceMOTOROLA INC·Filed 1994·Granted Jul 4, 1995·40 cites·15 claims
- 0966US4630669AHeat exchange apparatus for high temperature LPCVD equipmentMOTOROLA INC·Filed 1985·Granted Dec 23, 1986·28 cites·4 claims
- 1063US6127257AMethod of making a contact structureMOTOROLA INC·Filed 1993·Granted Oct 3, 2000·33 cites·14 claims
- 1162US4756272AMultiple gas injection apparatus for LPCVD equipmentMOTOROLA INC·Filed 1986·Granted Jul 12, 1988·23 cites·12 claims
- 1248US7446416B2Barrier material formation in integrated circuit structuresKLA TENCOR CORP·Filed 2005·Granted Nov 4, 2008·0 cites·2 claims
- 1348US2007284746A1Nano-electrode-array for integrated circuit interconnectsKLA TENCOR TECH CORP·Filed 2007·Application pending·0 cites
- 1446US5236874AMethod for forming a material layer in a semiconductor device using liquid phase depositionMOTOROLA INC·Filed 1991·Granted Aug 17, 1993·16 cites·19 claims
- 1538US5411903ASelf-aligned complementary HFETSMOTOROLA INC·Filed 1993·Granted May 2, 1995·6 cites·8 claims
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