Inventor · disambiguated record
Stephen D. Hersee
Also filed as: HERSEE STEPHEN D
33 granted patents·5 pending applications·928 citations·filing 1988–2022
98Inventor score
Top patents by PatentIndex Score
38 records- 0198US11342442B2Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestalUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 24, 2022·4 cites·22 claims
- 0298US8624968B1Lens-less digital microscopeHERSEE STEPHEN D·Filed 2010·Granted Jan 7, 2014·90 cites·6 claims
- 0397US9142400B1Method of making a heteroepitaxial layer on a seed areaSTC UNM·Filed 2013·Granted Sep 22, 2015·15 cites·10 claims
- 0497US9106056B1Phase-coupled arrays of nanowire laser devices and method of controlling an array of such devicesHERSEE STEPHEN D·Filed 2013·Granted Aug 11, 2015·37 cites·17 claims
- 0597US7521274B2Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk materialSTC UNM·Filed 2007·Granted Apr 21, 2009·104 cites·24 claims
- 0697US6685841B2Nanostructured devices for separation and analysisFiled 2002·Granted Feb 3, 2004·209 cites·34 claims
- 0796US9275857B1Nanowires, nanowire networks and methods for their formation and useHERSEE STEPHEN D·Filed 2013·Granted Mar 1, 2016·26 cites·14 claims
- 0896US6596377B1Thin film product and method of formingSTC UNM·Filed 2000·Granted Jul 22, 2003·98 cites·16 claims
- 0995US8410496B2Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk materialHERSEE STEPHEN D·Filed 2011·Granted Apr 2, 2013·20 cites·4 claims
- 1095US8039854B2Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk materialSTC UNM·Filed 2009·Granted Oct 18, 2011·27 cites·39 claims
- 1194US8455856B1Integration of LED driver circuit with LEDHERSEE STEPHEN D·Filed 2011·Granted Jun 4, 2013·16 cites·11 claims
- 1293US10141418B1Device with heteroepitaxial structure made using a growth maskBRUECK STEVEN R J·Filed 2015·Granted Nov 27, 2018·6 cites·5 claims
- 1391US11374106B2Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2020·Granted Jun 28, 2022·2 cites·24 claims
- 1491US8964020B2Solid-state microscope for selectively imaging a sampleHERSEE STEPHEN D·Filed 2008·Granted Feb 24, 2015·16 cites·14 claims
- 1590US4911101AMetal organic molecular beam epitaxy (MOMBE) apparatusGEN ELECTRIC·Filed 1988·Granted Mar 27, 1990·107 cites·6 claims
- 1688US7968359B2Thin-walled structuresSTC UNM·Filed 2008·Granted Jun 28, 2011·12 cites·20 claims
- 1787US8658519B1Nanowires, nanowire networks and methods for their formation and useSTC UNM·Filed 2012·Granted Feb 25, 2014·6 cites·5 claims
- 1886US8716045B2Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk materialSTC UNM·Filed 2013·Granted May 6, 2014·5 cites·22 claims
- 1985US8188513B2Nanowire and larger GaN based HEMTSHERSEE STEPHEN D·Filed 2008·Granted May 29, 2012·8 cites·21 claims
- 2084US8338818B1Nanowires, nanowire networks and methods for their formation and useHERSEE STEPHEN D·Filed 2009·Granted Dec 25, 2012·7 cites·20 claims
- 2183US2022293768A1Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2022·Application pending·0 cites
- 2283US2022285526A1Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2022·Application pending·0 cites
- 2378US6728289B1Non-planar micro-optical structuresSCIENCE & TECHNOLOGY CORP UNIV·Filed 2000·Granted Apr 27, 2004·23 cites·26 claims
- 2477US7666696B2Process for controlling indium clustering in ingan leds using strain arraysSTC UNM·Filed 2006·Granted Feb 23, 2010·6 cites·6 claims
- 2576US9696531B2Solid-state microscope for selectively imaging a sampleHERSEE STEPHEN D·Filed 2015·Granted Jul 4, 2017·2 cites·8 claims
- 2675US11456370B2Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestalUNM RAINFOREST INNOVATIONS·Filed 2020·Granted Sep 27, 2022·0 cites·21 claims
- 2775US11349011B2Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 31, 2022·0 cites·25 claims
- 2875US11342441B2Method of forming a seed area and growing a heteroepitaxial layer on the seed areaUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 24, 2022·0 cites·25 claims
- 2975US6122109ANon-planar micro-optical structuresUNIV NEW MEXICO·Filed 1999·Granted Sep 19, 2000·36 cites·17 claims
- 3074US2020212198A1Method of making heteroepitaxial structures and device formed by the methodSTC UNM·Filed 2020·Application pending·0 cites
- 3173US8343823B2Nanowire and larger GaN based HEMTsSTC UNM·Filed 2012·Granted Jan 1, 2013·2 cites·9 claims
- 3269US11342438B1Device with heteroepitaxial structure made using a growth maskUNM RAINFOREST INNOVATIONS·Filed 2018·Granted May 24, 2022·0 cites·30 claims
- 3366US6841456B2Method of making an icosahedral boride structureFiled 2003·Granted Jan 11, 2005·13 cites·20 claims
- 3466US6365237B1Method of making non-planar micro-optical structuresUNIV NEW MEXICO·Filed 2000·Granted Apr 2, 2002·10 cites·60 claims
- 3566US5438585AUnstable resonator semiconductor laserUNIV NEW MEXICO·Filed 1994·Granted Aug 1, 1995·21 cites·8 claims
- 3654US8866125B2Integration of LED driver circuit with LEDHERSEE STEPHEN D·Filed 2013·Granted Oct 21, 2014·0 cites·6 claims
- 3743US2007257264A1CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDSHERSEE STEPHEN D·Filed 2006·Application pending·0 cites
- 3836US2004154656A1Nuclear radiation fueled power cellsSTC UNM·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →