Inventor · disambiguated record
Brian Eastep
Also filed as: EASTEP BRIAN · EASTEP BRIAN LEE
11 granted patents·1 pending application·287 citations·filing 1994–2009
92Inventor score
Top patents by PatentIndex Score
12 records- 0191US6281023B2Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layerRAMTRON INT CORP·Filed 2001·Granted Aug 28, 2001·59 cites·9 claims
- 0285US6090443AMulti-layer approach for optimizing ferroelectric film performanceRAMTRON INT CORP·Filed 1998·Granted Jul 18, 2000·56 cites·21 claims
- 0384US6887716B2Process for producing high quality PZT films for ferroelectric memory integrated circuitsFUJITSU LTD·Filed 2000·Granted May 3, 2005·34 cites·20 claims
- 0476US6211542B1Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced escapsulation layerRAMTRON INT CORP·Filed 1998·Granted Apr 3, 2001·33 cites·11 claims
- 0572US6627930B1Ferroelectric thin film capacitors having multi-layered crystallographic texturesFUJITSU LTD·Filed 2000·Granted Sep 30, 2003·18 cites·9 claims
- 0669US6455326B1Enhanced process capability for sputtered ferroelectric films using low frequency pulsed DC and RF power suppliesRAMTRON INT CORP·Filed 2000·Granted Sep 24, 2002·12 cites·5 claims
- 0767US6287637B1Multi-layer approach for optimizing ferroelectric film performanceRAMTRON INT CORP·Filed 1999·Granted Sep 11, 2001·25 cites·15 claims
- 0863US8319208B2Methods of forming thin films for molecular based devicesSORENSON THOMAS A·Filed 2009·Granted Nov 27, 2012·8 cites·17 claims
- 0960US6964873B2Semiconductor device having a ferroelectric capacitor and a fabrication process thereofFUJITSU LTD·Filed 2000·Granted Nov 15, 2005·7 cites·1 claims
- 1056US5498569ALayered local interconnect compatible with integrated circuit ferroelectric capacitorsRAMTRON INT CORP·Filed 1994·Granted Mar 12, 1996·25 cites·20 claims
- 1150US6080499AMulti-layer approach for optimizing ferroelectric film performanceRAMTRON INT CORP·Filed 1997·Granted Jun 27, 2000·10 cites·20 claims
- 1236US2002142489A1Semiconductor device having a ferroelectric capacitor and a fabrication process thereofFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →