Inventor · disambiguated record
Jed H. Rankin
Also filed as: GAUTHIER JR ROBERT J · GAUTHIER ROBERT J · RANKIN JED · RANKIN JED H
216 granted patents·19 pending applications·4,451 citations·filing 1998–2019
99Inventor score
Top patents by PatentIndex Score
235 records- 0199US7790524B2Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structuresIBM·Filed 2008·Granted Sep 7, 2010·248 cites·16 claims
- 0299US7188322B2Circuit layout methodology using a shape processing applicationIBM·Filed 2005·Granted Mar 6, 2007·192 cites·16 claims
- 0398US7288445B2Double gated transistor and method of fabricationIBM·Filed 2005·Granted Oct 30, 2007·125 cites·3 claims
- 0498US6949768B1Planar substrate devices integrated with finfets and method of manufactureIBM·Filed 2004·Granted Sep 27, 2005·136 cites·19 claims
- 0598US6689650B2Fin field effect transistor with self-aligned gateIBM·Filed 2001·Granted Feb 10, 2004·216 cites·11 claims
- 0698US6583469B1Self-aligned dog-bone structure for FinFET applications and methods to fabricate the sameIBM·Filed 2002·Granted Jun 24, 2003·268 cites·8 claims
- 0798US6483156B1Double planar gated SOI MOSFET structureIBM·Filed 2000·Granted Nov 19, 2002·210 cites·7 claims
- 0898US6472258B1Double gate trench transistorIBM·Filed 2000·Granted Oct 29, 2002·162 cites·9 claims
- 0997US7790543B2Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structuresIBM·Filed 2008·Granted Sep 7, 2010·80 cites·9 claims
- 1097US7763531B2Method and structure to process thick and thin fins and variable fin to fin spacingIBM·Filed 2007·Granted Jul 27, 2010·73 cites·19 claims
- 1197US7301210B2Method and structure to process thick and thin fins and variable fin to fin spacingIBM·Filed 2006·Granted Nov 27, 2007·65 cites·8 claims
- 1297US7163851B2Concurrent Fin-FET and thick-body device fabricationIBM·Filed 2002·Granted Jan 16, 2007·111 cites·22 claims
- 1396US8384690B2Interface device with integrated solar cell(S) for power collectionIBM·Filed 2010·Granted Feb 26, 2013·16 cites·20 claims
- 1496US6876035B2High voltage N-LDMOS transistors having shallow trench isolation regionIBM·Filed 2003·Granted Apr 5, 2005·86 cites·12 claims
- 1596US6812075B2Self-aligned dog-bone structure for FinFET applications and methods to fabricate the sameIBM·Filed 2003·Granted Nov 2, 2004·127 cites·10 claims
- 1696US6610607B1Method to define and tailor process limited lithographic features using a modified hard mask processIBM·Filed 2000·Granted Aug 26, 2003·217 cites·22 claims
- 1796US6406962B1Vertical trench-formed dual-gate FET device structure and method for creationIBM·Filed 2001·Granted Jun 18, 2002·139 cites·40 claims
- 1895US7645650B2Double gated transistor and method of fabricationIBM·Filed 2007·Granted Jan 12, 2010·29 cites·18 claims
- 1995US7368354B2Planar substrate devices integrated with FinFETs and method of manufactureIBM·Filed 2005·Granted May 6, 2008·33 cites·20 claims
- 2094US9093478B1Integrated circuit structure with bulk silicon FinFET and methods of formingIBM·Filed 2014·Granted Jul 28, 2015·14 cites·13 claims
- 2194US6646305B2Grounded body SOI SRAM cellIBM·Filed 2001·Granted Nov 11, 2003·72 cites·11 claims
- 2292US9740080B2Waveguide switch with tuned photonic microringIBM·Filed 2015·Granted Aug 22, 2017·5 cites·14 claims
- 2392US8455330B2Devices with gate-to-gate isolation structures and methods of manufactureANDERSON BRENT A·Filed 2010·Granted Jun 4, 2013·11 cites·10 claims
- 2492US6624031B2Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structureIBM·Filed 2001·Granted Sep 23, 2003·62 cites·13 claims
- 2591US7382036B2Doped single crystal silicon silicided eFuseIBM·Filed 2005·Granted Jun 3, 2008·19 cites·15 claims
- 2691US7087499B2Integrated antifuse structure for FINFET and CMOS devicesIBM·Filed 2002·Granted Aug 8, 2006·58 cites·17 claims
- 2791US6525371B2Self-aligned non-volatile random access memory cell and process to make the sameIBM·Filed 1999·Granted Feb 25, 2003·98 cites·19 claims
- 2891US6504207B1Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the sameIBM·Filed 2000·Granted Jan 7, 2003·67 cites·10 claims
- 2990US8298913B2Devices with gate-to-gate isolation structures and methods of manufactureANDERSON BRENT A·Filed 2010·Granted Oct 30, 2012·10 cites·19 claims
- 3090US7534669B2Method and structure to create multiple device widths in FinFET technology in both bulk and SOIIBM·Filed 2007·Granted May 19, 2009·16 cites·13 claims
- 3190US7297582B2Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensionsIBM·Filed 2004·Granted Nov 20, 2007·36 cites·14 claims
- 3290US6947275B1Fin capacitorIBM·Filed 2004·Granted Sep 20, 2005·49 cites·29 claims
- 3390US6800905B2Implanted asymmetric doped polysilicon gate FinFETIBM·Filed 2001·Granted Oct 5, 2004·48 cites·14 claims
- 3490US6498096B2Borderless contact to diffusion with respect to gate conductor and methods for fabricatingIBM·Filed 2001·Granted Dec 24, 2002·62 cites·11 claims
- 3589US8878260B2Devices with gate-to-gate isolation structures and methods of manufactureANDERSON BRENT A·Filed 2012·Granted Nov 4, 2014·8 cites·20 claims
- 3689US6962843B2Method of fabricating a finfetIBM·Filed 2003·Granted Nov 8, 2005·40 cites·17 claims
- 3789US6660596B2Double planar gated SOI MOSFET structureIBM·Filed 2002·Granted Dec 9, 2003·46 cites·9 claims
- 3888US8216909B2Field effect transistor with air gap dielectricABADEER WAGDI W·Filed 2009·Granted Jul 10, 2012·14 cites·5 claims
- 3988US8015514B2Random personalization of chips during fabricationIBM·Filed 2008·Granted Sep 6, 2011·14 cites·21 claims
- 4088US7872310B2Semiconductor structure and system for fabricating an integrated circuit chipIBM·Filed 2009·Granted Jan 18, 2011·11 cites·6 claims
- 4188US6440834B2Method and structure for a semiconductor fuseIBM·Filed 2001·Granted Aug 27, 2002·44 cites·29 claims
- 4288US6030541AProcess for defining a pattern using an anti-reflective coating and structure thereforIBM·Filed 1998·Granted Feb 29, 2000·105 cites·18 claims
- 4387US7247908B2Method of fabricating a FinFETIBM·Filed 2005·Granted Jul 24, 2007·12 cites·15 claims
- 4487US7224029B2Method and structure to create multiple device widths in FinFET technology in both bulk and SOIIBM·Filed 2004·Granted May 29, 2007·36 cites·11 claims
- 4586US8903210B2Vertical bend waveguide coupler for photonics applicationsIBM·Filed 2013·Granted Dec 2, 2014·7 cites·9 claims
- 4686US8524545B2Simultaneous formation of FinFET and MUGFETANDERSON BRENT A·Filed 2010·Granted Sep 3, 2013·6 cites·10 claims
- 4786US8378394B2Method for forming and structure of a recessed source/drain strap for a MUGFETIBM·Filed 2010·Granted Feb 19, 2013·7 cites·10 claims
- 4886US6624478B2High mobility transistors in SOI and method for formingIBM·Filed 2002·Granted Sep 23, 2003·34 cites·15 claims
- 4985US9097989B2Target and method for mask-to-wafer CD, pattern placement and overlay measurement and controlAUSSCHNITT CHRISTOPHER P·Filed 2009·Granted Aug 4, 2015·8 cites·15 claims
- 5085US8598660B2Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltageCAMILLO-CASTILLO RENATA·Filed 2011·Granted Dec 3, 2013·7 cites·11 claims
Showing the top 50 of 235 patent records by PatentIndex Score.
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