Inventor · disambiguated record
Robert Falster
Also filed as: FALSTER ROBERT A · FALSTER ROBERT J
8 granted patents·3 pending applications·308 citations·filing 1998–2005
91Inventor score
Technology areasH10P
Files withMEMC ELECTRONIC MATERIALS11
Top patents by PatentIndex Score
11 records- 0195US5919302ALow defect density vacancy dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 6, 1999·139 cites·40 claims
- 0290US6254672B1Low defect density self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 3, 2001·64 cites·20 claims
- 0383US6632278B2Low defect density epitaxial wafer and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 14, 2003·16 cites·11 claims
- 0483US6409826B2Low defect density, self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 25, 2002·17 cites·27 claims
- 0579US6190631B1Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Feb 20, 2001·40 cites·82 claims
- 0666US6840997B2Vacancy, dominsated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jan 11, 2005·7 cites·13 claims
- 0765US6379642B1Vacancy dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Apr 30, 2002·21 cites·27 claims
- 0858US6555194B1Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Apr 29, 2003·4 cites·20 claims
- 0951US2005238905A1Vacancy-dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 1045US2004089224A1Process for producing low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
- 1142US2003051657A1Vacancy, dominated, defect-free siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →