Inventor · disambiguated record
Kevin G. Donohoe
Also filed as: DONOHOE KEVIN · DONOHOE KEVIN G
110 granted patents·11 pending applications·3,569 citations·filing 1991–2008
99Inventor score
Files withMICRON TECHNOLOGY INC110DONOHOE KEVIN G4APPLIED MATERIALS INC1HEDBERG CHUCK E1JUENGLING WERNER1
Top patents by PatentIndex Score
121 records- 0199US6784108B1Gas pulsing for etch profile controlMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 31, 2004·567 cites·40 claims
- 0298US6356500B1Reduced power DRAM device and methodMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 12, 2002·180 cites·39 claims
- 0398US5662770AMethod and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucksMICRON TECHNOLOGY INC·Filed 1993·Granted Sep 2, 1997·119 cites·12 claims
- 0497US6414376B1Method and apparatus for reducing isolation stress in integrated circuitsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 2, 2002·212 cites·35 claims
- 0596US6132552AMethod and apparatus for controlling the temperature of a gas distribution plate in a process reactorMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 17, 2000·121 cites·42 claims
- 0695US6582512B2Method of forming three-dimensional photonic band structures in solid materialsMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 24, 2003·87 cites·71 claims
- 0794US6946053B2Plasma reactorMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 20, 2005·30 cites·39 claims
- 0894US6544895B1Methods for use of pulsed voltage in a plasma reactorMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 8, 2003·66 cites·39 claims
- 0994US6511912B1Method of forming a non-conformal layer over and exposing a trenchMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 28, 2003·56 cites·1 claims
- 1094US6312556B1Beat frequency modulation for plasma generationMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 6, 2001·55 cites·15 claims
- 1194US6309978B1Beat frequency modulation for plasma generationMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 30, 2001·121 cites·10 claims
- 1294US6184146B1Plasma producing tools, dual-source plasma etchers, dual-source plasma etching methods, and method of forming planar coil dual-source plasma etchersMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 6, 2001·38 cites·76 claims
- 1394US5225024AMagnetically enhanced plasma reactor system for semiconductor processingAPPLIED MATERIALS INC·Filed 1991·Granted Jul 6, 1993·140 cites·9 claims
- 1493US6451705B1Self-aligned PECVD etch maskMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 17, 2002·66 cites·101 claims
- 1592US7059267B2Use of pulsed grounding source in a plasma reactorMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 13, 2006·69 cites·2 claims
- 1692US5985375AMethod for pulsed-plasma enhanced vapor depositionMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 16, 1999·76 cites·18 claims
- 1791US6630410B2Self-aligned PECVD etch maskMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 7, 2003·48 cites·63 claims
- 1891US6413358B2Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucksMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 2, 2002·52 cites·20 claims
- 1991US5904799AMethod and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucksMICRON TECHNOLOGY INC·Filed 1995·Granted May 18, 1999·84 cites·3 claims
- 2090US6890858B2Methods of forming materials over uneven surface topologies, and methods of forming insulative materials over and between conductive linesMICRON TECHNOLOGY INC·Filed 2002·Granted May 10, 2005·34 cites·29 claims
- 2190US6290806B1Plasma reactorMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 18, 2001·76 cites·9 claims
- 2288US7253117B2Methods for use of pulsed voltage in a plasma reactorMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 7, 2007·34 cites·11 claims
- 2388US6500300B2Plasma reactorMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 31, 2002·16 cites·22 claims
- 2487US6074953ADual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchersMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 13, 2000·35 cites·64 claims
- 2586US7297637B2Use of pulsed grounding source in a plasma reactorMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 20, 2007·32 cites·49 claims
- 2686US6503410B1Method of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilitiesMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 7, 2003·17 cites·37 claims
- 2786US6126778ABeat frequency modulation for plasma generationMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 3, 2000·42 cites·15 claims
- 2885US6890863B1Etchant and method of useMICRON TECHNOLOGY INC·Filed 2000·Granted May 10, 2005·26 cites·35 claims
- 2985US6114252APlasma processing tools, dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchersMICRON TECHNOLOGY INC·Filed 1999·Granted Sep 5, 2000·30 cites·76 claims
- 3084US6475920B2Plasma etching method using low ionization potential gasMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 5, 2002·28 cites·36 claims
- 3183US6716758B1Aspect ratio controlled etch selectivity using time modulated DC bias voltageMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 6, 2004·52 cites·37 claims
- 3283US6093655APlasma etching methodsMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 25, 2000·52 cites·10 claims
- 3383US5882535AMethod for forming a hole in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 16, 1999·68 cites·47 claims
- 3482US6136720APlasma processing tools dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchersMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 24, 2000·12 cites·74 claims
- 3581US7163641B2Method of forming high aspect ratio aperturesMICRON TECHNOLOGY INC·Filed 2003·Granted Jan 16, 2007·16 cites·30 claims
- 3681US6323133B1Method and apparatus for controlling the temperature of a gas distribution plate in a process reactorMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 27, 2001·14 cites·5 claims
- 3779US6516742B1Apparatus for improved low pressure inductively coupled high density plasma reactorMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 11, 2003·24 cites·24 claims
- 3878US7429535B2Use of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2007·Granted Sep 30, 2008·4 cites·10 claims
- 3978US6299725B1Method and apparatus for controlling the temperature of a gas distribution plate in a process reactorMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 9, 2001·11 cites·41 claims
- 4078US5950092AUse of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 7, 1999·37 cites·18 claims
- 4177US6617256B2Method for controlling the temperature of a gas distribution plate in a process reactorMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·10 cites·5 claims
- 4277US6342165B1Method of forming high aspect ratio aperturesMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 29, 2002·13 cites·13 claims
- 4377US6095159AMethod of modifying an RF circuit of a plasma chamber to increase chamber life and process capabilitiesMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 1, 2000·21 cites·24 claims
- 4474US6613189B2Apparatus for controlling the temperature of a gas distribution plate in a process reactorMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 2, 2003·8 cites·40 claims
- 4574US6387816B2Method and apparatus for controlling the temperature of a gas distribution plate in a process reactorMICRON TECHNOLOGY INC·Filed 2001·Granted May 14, 2002·8 cites·5 claims
- 4674US5449433AUse of a high density plasma source having an electrostatic shield for anisotropic polysilicon etching over topographyMICRON SEMICONDUCTOR INC·Filed 1994·Granted Sep 12, 1995·53 cites·18 claims
- 4773US6123862AMethod of forming high aspect ratio aperturesMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 26, 2000·28 cites·19 claims
- 4872US6610212B2Method of forming high aspect ratio aperturesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 26, 2003·9 cites·12 claims
- 4972US6383334B1Method and apparatus for controlling the temperature of a gas distribution plate in a process reactorMICRON TECHNOLOGY INC·Filed 2001·Granted May 7, 2002·7 cites·41 claims
- 5071US6402886B2Use of a chemically active reticle carrier for photomask etchingMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 11, 2002·9 cites·30 claims
Showing the top 50 of 121 patent records by PatentIndex Score.
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