Inventor · disambiguated record
Benjamin T. Voegeli
Also filed as: VOEGELI BENJAMIN T · VOEGELI BENJAMIN THOMAS
21 granted patents·3 pending applications·121 citations·filing 2005–2019
94Inventor score
Files withIBM14FEILCHENFELD NATALIE B4VOEGELI BENJAMIN T2ANALOG DEVICES INTERNATIONAL UNLIMITED CO1ARSOVSKI IGOR1
Top patents by PatentIndex Score
24 records- 0194US7829945B2Lateral diffusion field effect transistor with asymmetric gate dielectric profileIBM·Filed 2007·Granted Nov 9, 2010·31 cites·12 claims
- 0287US7956412B2Lateral diffusion field effect transistor with a trench field plateIBM·Filed 2007·Granted Jun 7, 2011·14 cites·14 claims
- 0383US7710302B2Design structures and systems involving digital to analog convertersIBM·Filed 2007·Granted May 4, 2010·14 cites·14 claims
- 0481US7892910B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationIBM·Filed 2007·Granted Feb 22, 2011·7 cites·20 claims
- 0581US7732835B2Vertical P-N junction device and method of forming sameIBM·Filed 2008·Granted Jun 8, 2010·7 cites·12 claims
- 0680US7972919B2Vertical PNP transistor and method of making sameIBM·Filed 2005·Granted Jul 5, 2011·9 cites·13 claims
- 0777US7459367B2Method of forming a vertical P-N junction deviceIBM·Filed 2005·Granted Dec 2, 2008·6 cites·10 claims
- 0874US7532142B1Structures for systems and methods of generating an analog signalIBM·Filed 2008·Granted May 12, 2009·9 cites·1 claims
- 0973US8493250B2Comparator offset cancellation in a successive approximation analog-to-digital converterBONACCIO ANTHONY R·Filed 2011·Granted Jul 23, 2013·5 cites·21 claims
- 1073US8236662B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2010·Granted Aug 7, 2012·3 cites·20 claims
- 1173US7868809B2Digital to analog converter having fastpathsIBM·Filed 2009·Granted Jan 11, 2011·8 cites·16 claims
- 1267US7886240B2Modifying layout of IC based on function of interconnect and related circuit and design structureIBM·Filed 2008·Granted Feb 8, 2011·3 cites·17 claims
- 1364US8125019B2Electrically programmable resistorVOEGELI BENJAMIN T·Filed 2006·Granted Feb 28, 2012·3 cites·10 claims
- 1462US8114750B2Lateral diffusion field effect transistor with drain region self-aligned to gate electrodeFEILCHENFELD NATALIE B·Filed 2008·Granted Feb 14, 2012·1 cites·12 claims
- 1561US10218366B1Phase locked loop calibration for synchronizing non-constant frequency switching regulatorsLINEAR TECH HOLDING LLC·Filed 2017·Granted Feb 26, 2019·1 cites·20 claims
- 1655US10928434B2Averaged reference with fault monitoringANALOG DEVICES INTERNATIONAL UNLIMITED CO·Filed 2019·Granted Feb 23, 2021·0 cites·20 claims
- 1750US8525293B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2012·Granted Sep 3, 2013·0 cites·20 claims
- 1848US8946013B2Lateral diffusion field effect transistor with drain region self-aligned to gate electrodeFEILCHENFELD NATALIE B·Filed 2012·Granted Feb 3, 2015·0 cites·17 claims
- 1947US8302037B2Skewed double differential pair circuit for offset cancellationARSOVSKI IGOR·Filed 2009·Granted Oct 30, 2012·0 cites·5 claims
- 2045US8686478B2Methods of forming and programming an electronically programmable resistorVOEGELI BENJAMIN T·Filed 2011·Granted Apr 1, 2014·0 cites·19 claims
- 2143US8017995B2Deep trench semiconductor structure and methodIBM·Filed 2007·Granted Sep 13, 2011·0 cites·14 claims
- 2241US2008203536A1Bipolar transistor using selective dielectric deposition and methods for fabrication thereofIBM·Filed 2007·Application pending·0 cites
- 2341US2008217742A1Tailored bipolar transistor doping profile for improved reliabilityIBM·Filed 2007·Application pending·0 cites
- 2437US2008204068A1Method for estimating defects in an npn transistor arrayIBM·Filed 2007·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Benjamin T. Voegeli files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →