Inventor · disambiguated record
Elke Erben
Also filed as: ERBEN ELKE
9 granted patents·5 pending applications·46 citations·filing 2005–2016
85Inventor score
Top patents by PatentIndex Score
14 records- 0188US7666752B2Deposition method for a transition-metal-containing dielectricQIMONDA AG·Filed 2007·Granted Feb 23, 2010·17 cites·9 claims
- 0281US10079242B2Logic and flash field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 18, 2018·4 cites·19 claims
- 0381US8791003B2Methods for fabricating integrated circuits with fluorine passivationTRIYOSO DINA·Filed 2012·Granted Jul 29, 2014·6 cites·20 claims
- 0477US8420519B1Methods for fabricating integrated circuits with controlled P-channel threshold voltageTRIYOSO DINA·Filed 2011·Granted Apr 16, 2013·5 cites·19 claims
- 0576US8652890B2Methods for fabricating integrated circuits with narrow, metal filled openingsSCHMIDBAUER SVEN·Filed 2012·Granted Feb 18, 2014·6 cites·17 claims
- 0675US7531405B2Method of manufacturing a dielectric layer and corresponding semiconductor deviceQIMONDS AG·Filed 2005·Granted May 12, 2009·8 cites·6 claims
- 0749US2007269598A1Method, apparatus and starting material for providing a gaseous precursorKERSCH ALFRED·Filed 2007·Application pending·0 cites
- 0844US9236440B2Sandwich silicidation for fully silicided gate formationGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 12, 2016·0 cites·28 claims
- 0944US2008176375A1Method for forming a dielectric layerQIMONDA AG·Filed 2008·Application pending·0 cites
- 1042US8658490B2Passivating point defects in high-K gate dielectric layers during gate stack formationERBEN ELKE·Filed 2012·Granted Feb 25, 2014·0 cites·22 claims
- 1141US2015179740A1Transistor device with strained layerGLOBAL FOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1240US10109492B2Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ALD processGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 23, 2018·0 cites·20 claims
- 1339US2007161180A1Automatic layer deposition processINFINEON TECHNOLOGIES AG·Filed 2006·Application pending·0 cites
- 1439US2013280873A1Enhanced device reliability of a semiconductor device by providing superior process conditions in high-k film growthGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →