Inventor · disambiguated record
Shouichi Kawamura
Also filed as: KAWAMURA SHOUICHI
18 granted patents·1 pending application·565 citations·filing 1992–2005
96Inventor score
Top patents by PatentIndex Score
19 records- 0195US5608670AFlash memory with improved erasability and its circuitryFUJITSU LTD·Filed 1995·Granted Mar 4, 1997·66 cites·8 claims
- 0294US5487036ANonvolatile semiconductor memoryFUJITSU LTD·Filed 1994·Granted Jan 23, 1996·79 cites·9 claims
- 0393US5590074ANonvolatile semiconductor memoryFUJITSU LTD·Filed 1995·Granted Dec 31, 1996·82 cites·7 claims
- 0492US5537356ANonvolatile semiconductor memoryFUJITSU LTD·Filed 1995·Granted Jul 16, 1996·89 cites·6 claims
- 0591US7227780B2Semiconductor device and control method thereofSPANSION LLC·Filed 2005·Granted Jun 5, 2007·38 cites·14 claims
- 0688US5576637AXOR CMOS logic gateFUJITSU LTD·Filed 1995·Granted Nov 19, 1996·40 cites·1 claims
- 0776US5770963AFlash memory with improved erasability and its circuitryFUJITSU LTD·Filed 1995·Granted Jun 23, 1998·19 cites·2 claims
- 0875US5592419AFlash memory with improved erasability and its circuitryFUJITSU LTD·Filed 1995·Granted Jan 7, 1997·23 cites·1 claims
- 0973US5490107ANonvolatile semiconductor memoryFUJITSU LTD·Filed 1992·Granted Feb 6, 1996·22 cites·44 claims
- 1072US5485424ASemiconductor memory and redundant-address writing methodFUJITSU LTD·Filed 1993·Granted Jan 16, 1996·32 cites·8 claims
- 1169US5406524ANonvolatile semiconductor memory that eases the dielectric strength requirementsFUJITSU LTD·Filed 1994·Granted Apr 11, 1995·24 cites·4 claims
- 1261US5631597ANegative voltage circuit for a flash memoryFUJITSU LTD·Filed 1995·Granted May 20, 1997·10 cites·5 claims
- 1358US7102928B2Semiconductor memory apparatusKAWAMURA SHOUICHI·Filed 2002·Granted Sep 5, 2006·12 cites·7 claims
- 1453US5815440ASemiconductor memory device with electrically controllable threshold voltageFUJITSU LTD·Filed 1997·Granted Sep 29, 1998·7 cites·3 claims
- 1552US6288945B1Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 1999·Granted Sep 11, 2001·7 cites·2 claims
- 1648US5581107ANonvolatile semiconductor memory that eases the dielectric strength requirementsFUJITSU LTD·Filed 1994·Granted Dec 3, 1996·10 cites·12 claims
- 1736US6611464B2Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Granted Aug 26, 2003·0 cites·3 claims
- 1836US5572463ANonvolatile semiconductor memory with pre-read meansFUJITSU LTD·Filed 1995·Granted Nov 5, 1996·5 cites·12 claims
- 1935US2003198083A1Nonvolatile semiconductor memory device having electrically and collectively erasable characteristicsFUJITSU LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →