Inventor · disambiguated record
Karla Romero
Also filed as: ROMERO KARLA
8 granted patents·1 pending application·49 citations·filing 2004–2010
84Inventor score
Top patents by PatentIndex Score
9 records- 0193US7608499B2Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Oct 27, 2009·23 cites·24 claims
- 0284US7547610B2Method of making a semiconductor device comprising isolation trenches inducing different types of strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 16, 2009·11 cites·12 claims
- 0381US7719060B2Tensile strain source using silicon/germanium in globally strained siliconADVANCED MICRO DEVICES INC·Filed 2008·Granted May 18, 2010·6 cites·28 claims
- 0473US7745334B2Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniquesADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 29, 2010·4 cites·17 claims
- 0571US7999326B2Tensile strain source using silicon/germanium in globally strained siliconADVANCED MICRO DEVICES INC·Filed 2010·Granted Aug 16, 2011·2 cites·26 claims
- 0660US7279389B2Technique for forming a transistor having raised drain and source regions with a tri-layer hard mask for gate patterningADVANCED MICRO DEVICES INC·Filed 2005·Granted Oct 9, 2007·2 cites·29 claims
- 0756US8138571B2Semiconductor device comprising isolation trenches inducing different types of strainSCHWAN CHRISTOPH·Filed 2009·Granted Mar 20, 2012·1 cites·14 claims
- 0838US7807233B2Method of forming a TEOS cap layer at low temperature and reduced deposition rateGLOBALFOUNDRIES INC·Filed 2004·Granted Oct 5, 2010·0 cites·24 claims
- 0932US2006244069A1Semiconductor device having a gate dielectric of different blocking characteristicsWIECZOREK KARSTEN·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →