Inventor · disambiguated record
Sang In Yi
Also filed as: YI SANG · YI SANG IN
5 granted patents·1 pending application·48 citations·filing 2002–2011
76Inventor score
Top patents by PatentIndex Score
6 records- 0194US7297376B1Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layersAPPLIED MATERIALS INC·Filed 2006·Granted Nov 20, 2007·33 cites·26 claims
- 0258US6638874B2Methods used in fabricating gates in integrated circuit device structuresAPPLIED MATERIALS INC·Filed 2002·Granted Oct 28, 2003·7 cites·21 claims
- 0356US7368392B2Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrodeAPPLIED MATERIALS INC·Filed 2004·Granted May 6, 2008·7 cites·41 claims
- 0454US8596336B2Substrate support temperature controlFOVELL RICHARD·Filed 2008·Granted Dec 3, 2013·1 cites·23 claims
- 0553US2010018548A1Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performanceAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 0641US8702870B2Superimposition of rapid periodic and extensive post multiple substrate UV-ozone clean sequences for high throughput and stable substrate to substrate performanceYI SANG IN·Filed 2011·Granted Apr 22, 2014·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →