Inventor · disambiguated record
Shigeo Satoh
Also filed as: SATOH SHIGEO
26 granted patents·1 pending application·340 citations·filing 1985–2013
96Inventor score
Files withFUJITSU LTD8SATOH SHIGEO5USUJIMA AKIHIRO4FUJITSU MICROELECTRONICS LTD3FUJITSU SEMICONDUCTOR LTD3
Top patents by PatentIndex Score
27 records- 0194US7354817B2Semiconductor device, manufacturing method thereof, and CMOS integrated circuit deviceFUJITSU LTD·Filed 2005·Granted Apr 8, 2008·51 cites·4 claims
- 0291US4703628AApparatus for preparing frozen productsSANYO ELECTRIC CO·Filed 1985·Granted Nov 3, 1987·107 cites·25 claims
- 0388US7755147B2Semiconductor device, semiconductor system and semiconductor device manufacturing methodFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted Jul 13, 2010·16 cites·5 claims
- 0485US7423330B2Semiconductor device with strainFUJITSU LTD·Filed 2004·Granted Sep 9, 2008·23 cites·7 claims
- 0584US4860550AApparatus for preparing ice creamsSANYO ELECTRIC CO·Filed 1988·Granted Aug 29, 1989·75 cites·9 claims
- 0678US7701016B2Semiconductor device having device characteristics improved by straining surface of active region and its manufacture methodFUJITSU LTD·Filed 2006·Granted Apr 20, 2010·7 cites·7 claims
- 0777US7951686B2Method of manufacturing semiconductor device having device characteristics improved by straining surface of active regionFUJITSU LTD·Filed 2010·Granted May 31, 2011·4 cites·9 claims
- 0874US8338919B2Semiconductor device with strainSATOH SHIGEO·Filed 2011·Granted Dec 25, 2012·2 cites·3 claims
- 0973US8237219B2Semiconductor device and method of manufacturing sameUSUJIMA AKIHIRO·Filed 2010·Granted Aug 7, 2012·3 cites·3 claims
- 1073US8102030B2Semiconductor device with strainSATOH SHIGEO·Filed 2010·Granted Jan 24, 2012·2 cites·5 claims
- 1172US7501686B2Semiconductor device and method for manufacturing the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Mar 10, 2009·6 cites·19 claims
- 1269US8637929B2LDMOS transistor having a gate electrode formed over thick and thin portions of a gate insulation filmSATOH SHIGEO·Filed 2011·Granted Jan 28, 2014·3 cites·8 claims
- 1366US8609500B2Semiconductor device production methodSATOH SHIGEO·Filed 2012·Granted Dec 17, 2013·2 cites·12 claims
- 1466US7719090B2Semiconductor device with strainFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted May 18, 2010·1 cites·4 claims
- 1562US8729610B2Semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted May 20, 2014·1 cites·8 claims
- 1658US7034366B2Semiconductor device, manufacturing method thereof, and CMOS integrated circuit deviceFUJITSU LTD·Filed 2003·Granted Apr 25, 2006·7 cites·12 claims
- 1757US8691654B2Semiconductor device having stressor film and method of manufacturing semiconductor deviceSATOH SHIGEO·Filed 2011·Granted Apr 8, 2014·1 cites·20 claims
- 1852US9012285B2Semiconductor device and method of manufacturing sameFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Apr 21, 2015·0 cites·6 claims
- 1952US7060578B2Semiconductor device and method of fabricating the sameFUJITSU LTD·Filed 2003·Granted Jun 13, 2006·3 cites·18 claims
- 2050US8470656B2Semiconductor device and method of manufacturing the sameUSUJIMA AKIHIRO·Filed 2012·Granted Jun 25, 2013·0 cites·5 claims
- 2149US5018363AApparatus for preparing ice creamsSANYO ELECTRIC CO·Filed 1989·Granted May 28, 1991·23 cites·8 claims
- 2247US8552506B2Semiconductor device and method of manufacturing the sameUSUJIMA AKIHIRO·Filed 2012·Granted Oct 8, 2013·0 cites·6 claims
- 2346US7157776B2Semiconductor device, manufacturing method thereof, and CMOS integrated circuit deviceFUJITSU LTD·Filed 2006·Granted Jan 2, 2007·0 cites·2 claims
- 2446US2007001245A1Semiconductor device and method of fabricating the sameFUJITSU LTD·Filed 2005·Application pending·0 cites
- 2545US7557429B2Semiconductor device with resistor element and dummy active regionFUJITSU MICROELECTRONICS LTD·Filed 2004·Granted Jul 7, 2009·3 cites·9 claims
- 2642US8216895B2Semiconductor device and method of manufacturing the sameUSUJIMA AKIHIRO·Filed 2010·Granted Jul 10, 2012·0 cites·14 claims
- 2725US5229219AMagnetic recording medium comprising a magnetic layer containing a specified magnetic ferrite powder and having a curie temperature up to 180° C.TDK CORP·Filed 1989·Granted Jul 20, 1993·0 cites·8 claims
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