Semiconductor device and method of fabricating the same

Abstract

An impurity having a conductivity type same as that contained in a source-and-drain region is implanted to an exposed surface of a gate electrode along a direction inclined to the surface of said semiconductor substrate, while using over-etched sidewalls as a mask, where the gate electrode is implanted both at the top surface and the upper portion of one side face thereof, whereas one of the source-and-drain regions is implanted with the impurity in an amount possibly attained by a single implantation, but the other portion is not implanted or only slightly implanted to a less affective degree.

1 - 18 . (canceled)  
   
   
       19 . A semiconductor device comprising: 
 a gate electrode;    source-and-drain regions;    sidewalls covering only the lower portion of both side faces of said gate electrode; and    a silicide film formed on the exposed surface of said gate electrode, wherein    said gate electrode contains an impurity having a conductivity type same as that of the impurity contained in said source-and-drain regions, and said gate electrode has an impurity concentration larger than that of said source-and-drain regions.    
   
   
       20 . The semiconductor device according to  claim 19 , wherein said silicide film is formed as being extended from the top surface to the upper portion of both side faces of said gate electrode.  
   
   
       21 . The semiconductor device according to  claim 19 , wherein said sidewalls are composed only of an oxide film.  
   
   
       22 . A computer program product comprising a computer-readable program code means for allowing a computer to execute a procedure for automatically forming an opening in a resist which covers a semiconductor substrate used for masking thereof in a process of introducing an impurity into a gate electrode along a direction tilt-angled to the surface of said semiconductor substrate, 
 said opening being formed in a size which ensures protection of areas for forming source-and-drain regions on both sides of said gate electrode from the tilt-angle introduction of the impurity.    
   
   
       23 . A computer-readable recording medium having recorded therein a program product, 
 said program product comprising a computer-readable program code means for allowing a computer to execute a procedure for automatically forming an opening in a resist which covers a semiconductor substrate used for masking thereof in a process of introducing an impurity into a gate electrode along a direction tilt-angled to the surface of said semiconductor substrate,    said opening being formed in a size which ensures protection of areas for forming source-and-drain regions on both sides of said gate electrode from the tilt-angle introduction of the impurity.