Inventor · disambiguated record
Young-Wug Kim
Also filed as: KIM YOUNG-WUG
36 granted patents·7 pending applications·620 citations·filing 1996–2016
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD26SEOUL VIOSYS CO LTD8HYNIX SEMICONDUCTOR INC3LG DISPLAY CO LTD1SEOUL OPTO DEVICE CO LTD1
Top patents by PatentIndex Score
43 records- 0195US6498370B1SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 24, 2002·87 cites·14 claims
- 0293US6521959B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 18, 2003·85 cites·8 claims
- 0389US6407429B1Semiconductor device having silicon on insulator and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 18, 2002·45 cites·8 claims
- 0487US9362449B2High efficiency light emitting diode and method of fabricating the sameSEOUL VIOSYS CO LTD·Filed 2014·Granted Jun 7, 2016·5 cites·18 claims
- 0587US7323420B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 29, 2008·11 cites·9 claims
- 0687US6911397B2Method of forming dual damascene interconnection using low-k dielectricSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 28, 2005·42 cites·16 claims
- 0786US9991424B2Light-emitting diode and method for manufacturing sameSEOUL VIOSYS CO LTD·Filed 2016·Granted Jun 5, 2018·4 cites·17 claims
- 0885US7348636B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·11 cites·5 claims
- 0984US9236533B2Light emitting diode and method for manufacturing sameSEOUL VIOSYS CO LTD·Filed 2012·Granted Jan 12, 2016·3 cites·7 claims
- 1084US6855641B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·31 cites·21 claims
- 1184US6548877B2Metal oxide semiconductor field effect transistor for reducing resistance between source and drainSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 15, 2003·27 cites·7 claims
- 1281US6900503B2SRAM formed on SOI substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 31, 2005·28 cites·25 claims
- 1379US6806157B2Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·19 cites·6 claims
- 1477US6794716B2SOI MOSFET having body contact for preventing floating body effect and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 21, 2004·22 cites·5 claims
- 1573US6492260B1Method of fabricating damascene metal wiringSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 10, 2002·43 cites·28 claims
- 1670US7179750B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 20, 2007·11 cites·11 claims
- 1767US6689648B2Semiconductor device having silicon on insulator and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·11 cites·23 claims
- 1866US7602465B2In-plane switching mode liquid crystal display deviceLG DISPLAY CO LTD·Filed 2003·Granted Oct 13, 2009·9 cites·27 claims
- 1966US6437445B1Niobium-near noble metal contact structures for integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Aug 20, 2002·10 cites·8 claims
- 2066US6150249AMethods of forming niobium-near noble metal contact structures for integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 21, 2000·30 cites·10 claims
- 2165US6706569B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 16, 2004·10 cites·14 claims
- 2265US6255697B1Integrated circuit devices including distributed and isolated dummy conductive regionsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 3, 2001·29 cites·9 claims
- 2364US9018027B2Method of fabricating gallium nitride-based semiconductor deviceSEOUL VIOSYS CO LTD·Filed 2013·Granted Apr 28, 2015·1 cites·20 claims
- 2463US9653018B2Light-emitting diode driving device, driving method and light-emitting diode lighting module comprising the sameSEOUL VIOSYS CO LTD·Filed 2015·Granted May 16, 2017·1 cites·25 claims
- 2561US9508909B2Light-emitting diode and method for manufacturing sameSEOUL VIOSYS CO LTD·Filed 2015·Granted Nov 29, 2016·0 cites·17 claims
- 2661US9159870B2Method of fabricating gallium nitride based semiconductor deviceSEOUL OPTO DEVICE CO LTD·Filed 2013·Granted Oct 13, 2015·1 cites·9 claims
- 2761US7410843B2Methods for fabricating reduced floating body effect static random access memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·2 cites·11 claims
- 2861US6703280B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 9, 2004·8 cites·8 claims
- 2957US9257340B2Wafer and method for forming the sameSK HYNIX INC·Filed 2014·Granted Feb 9, 2016·0 cites·21 claims
- 3056US6656814B2Methods of fabricating integrated circuit devices including distributed and isolated dummy conductive regionsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 2, 2003·7 cites·8 claims
- 3152US2007170508A1Semiconductor device and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3249US5674782AMethod for efficiently removing by-products produced in dry-etchingSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 7, 1997·15 cites·16 claims
- 3347US2011127645A1Wafer and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 3446US7217622B2Semiconductor device and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 15, 2007·0 cites·26 claims
- 3546US6074907AMethod of manufacturing capacitor for analog functionSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 13, 2000·10 cites·9 claims
- 3644US9450141B2Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methodsSEOUL VIOSYS CO LTD·Filed 2013·Granted Sep 20, 2016·0 cites·15 claims
- 3743US9373496B2Substrate recycling method and recycled substrateSEOUL VIOSYS CO LTD·Filed 2013·Granted Jun 21, 2016·0 cites·24 claims
- 3843US7105900B2Reduced floating body effect static random access memory cells and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 12, 2006·2 cites·18 claims
- 3938US2011127644A1Wafer and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 4038US2011127646A1Wafer and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 4136US2001016413A1Semiconductor device and method of manufacturing a semiconductor device with reduced contact failuresFiled 2001·Application pending·0 cites
- 4235US2004185608A1Methods of forming integrated circuit devices using buffer layers covering conductive/insulating interfacesFiled 2003·Application pending·0 cites
- 4335US2002115244A1SOI MOSFET having body contact for preventing floating body effect and method of fabricating the sameFiled 2002·Application pending·0 cites
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