Inventor · disambiguated record
Samir Chaudhry
Also filed as: CHAUDHRY SAMIR
32 granted patents·5 pending applications·627 citations·filing 1997–2018
98Inventor score
Files withAGERE SYSTEMS INC24LUCENT TECHNOLOGIES INC3NEWPORT FAB LLC3AGERE SYST GUARDIAN CORP2CHAUDHRY SAMIR1
Top patents by PatentIndex Score
37 records- 0193US7033877B2Vertical replacement-gate junction field-effect transistorAGERE SYSTEMS INC·Filed 2003·Granted Apr 25, 2006·77 cites·22 claims
- 0291US10325833B1Bent polysilicon gate structure for small footprint radio frequency (RF) switchNEWPORT FAB LLC·Filed 2018·Granted Jun 18, 2019·9 cites·20 claims
- 0391US7700432B2Method of fabricating a vertical transistor and capacitorAGERE SYSTEMS INC·Filed 2009·Granted Apr 20, 2010·14 cites·14 claims
- 0489US6906962B2Method for defining the initial state of static random access memoryAGERE SYSTEMS INC·Filed 2002·Granted Jun 14, 2005·54 cites·33 claims
- 0587US6690040B2Vertical replacement-gate junction field-effect transistorAGERE SYSTEMS INC·Filed 2001·Granted Feb 10, 2004·37 cites·21 claims
- 0687US6686604B2Multiple operating voltage vertical replacement-gate (VRG) transistorAGERE SYSTEMS INC·Filed 2001·Granted Feb 3, 2004·39 cites·19 claims
- 0787US6639298B2Multi-layer inductor formed in a semiconductor substrateAGERE SYSTEMS INC·Filed 2001·Granted Oct 28, 2003·45 cites·2 claims
- 0885US6759730B2Bipolar junction transistor compatible with vertical replacement gate transistorAGERE SYSTEMS INC·Filed 2001·Granted Jul 6, 2004·41 cites·21 claims
- 0981US6207510B1Method for making an integrated circuit including high and low voltage transistorsLUCENT TECHNOLOGIES INC·Filed 1999·Granted Mar 27, 2001·62 cites·31 claims
- 1078US10587114B2Bi-directional electrostatic discharge protection device for radio frequency circuitsNEWPORT FAB LLC·Filed 2017·Granted Mar 10, 2020·2 cites·18 claims
- 1178US7259048B2Vertical replacement-gate silicon-on-insulator transistorAGERE SYSTEMS INC·Filed 2006·Granted Aug 21, 2007·6 cites·5 claims
- 1277US10469035B2Amplifier using parallel high-speed and low-speed transistorsNEWPORT FAB LLC·Filed 2018·Granted Nov 5, 2019·3 cites·17 claims
- 1375US6738294B2Electronic fingerprinting of semiconductor integrated circuitsAGERE SYSTEMS INC·Filed 2002·Granted May 18, 2004·23 cites·13 claims
- 1472US7242056B2Structure and fabrication method for capacitors integratible with vertical replacement gate transistorsAGERE SYSTEMS INC·Filed 2004·Granted Jul 10, 2007·11 cites·10 claims
- 1572US7132297B2Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic materialAGERE SYSTEMS INC·Filed 2003·Granted Nov 7, 2006·19 cites·48 claims
- 1672US6828561B2Apparatus and method for detecting alpha particlesAGERE SYSTEMS INC·Filed 2002·Granted Dec 7, 2004·15 cites·15 claims
- 1771US6359317B1Vertical PNP bipolar transistor and its method of fabricationAGERE SYST GUARDIAN CORP·Filed 1998·Granted Mar 19, 2002·32 cites·6 claims
- 1869US7056783B2Multiple operating voltage vertical replacement-gate (VRG) transistorAGERE SYSTEMS INC·Filed 2003·Granted Jun 6, 2006·13 cites·7 claims
- 1965US6576521B1Method of forming semiconductor device with LDD structureAGERE SYSTEMS INC·Filed 1998·Granted Jun 10, 2003·29 cites·15 claims
- 2063US7078280B2Vertical replacement-gate silicon-on-insulator transistorAGERE SYSTEMS INC·Filed 2004·Granted Jul 18, 2006·8 cites·17 claims
- 2162US7911006B2Structure and fabrication method for capacitors integratible with vertical replacement gate transistorsAGERE SYSTEMS INC·Filed 2009·Granted Mar 22, 2011·1 cites·5 claims
- 2260US6709904B2Vertical replacement-gate silicon-on-insulator transistorAGERE SYSTEMS INC·Filed 2001·Granted Mar 23, 2004·7 cites·12 claims
- 2360US6001701AProcess for making bipolar having graded or modulated collectorLUCENT TECHNOLOGIES INC·Filed 1997·Granted Dec 14, 1999·26 cites·7 claims
- 2459US7049199B2Method of ion implantation for achieving desired dopant concentrationAGERE SYSTEMS INC·Filed 2003·Granted May 23, 2006·5 cites·20 claims
- 2557US6667536B2Thin film multi-layer high Q transformer formed in a semiconductor substrateAGERE SYSTEMS INC·Filed 2001·Granted Dec 23, 2003·9 cites·2 claims
- 2655US7151059B2MOS transistor and method of manufactureAGERE SYSTEMS INC·Filed 2004·Granted Dec 19, 2006·4 cites·15 claims
- 2755US6204186B1Method of making integrated circuit capacitor including tapered plugLUCENT TECHNOLOGIES INC·Filed 1999·Granted Mar 20, 2001·20 cites·29 claims
- 2854US7169714B2Method and structure for graded gate oxides on vertical and non-planar surfacesAGERE SYSTEMS INC·Filed 2004·Granted Jan 30, 2007·3 cites·19 claims
- 2952US7633118B2Structure and fabrication method for capacitors integratible with vertical replacement gate transistorsAGERE SYSTEMS INC·Filed 2007·Granted Dec 15, 2009·0 cites·3 claims
- 3052US7491610B2Fabrication methodAGERE SYSTEMS INC·Filed 2007·Granted Feb 17, 2009·0 cites·13 claims
- 3149US6249016B1Integrated circuit capacitor including tapered plugAGERE SYST GUARDIAN CORP·Filed 1999·Granted Jun 19, 2001·11 cites·33 claims
- 3246US6740912B1Semiconductor device free of LLD regionsAGERE SYSTEMS INC·Filed 2000·Granted May 25, 2004·2 cites·20 claims
- 3346US2006166429A1Vertical replacement-gate junction field-effect transistorCHAUDHRY SAMIR·Filed 2006·Application pending·0 cites
- 3441US2003235957A1Method and structure for graded gate oxides on vertical and non-planar surfacesFiled 2002·Application pending·0 cites
- 3540US2003064550A1Method of ion implantation for achieving desired dopant concentrationFiled 2001·Application pending·0 cites
- 3637US2003052365A1Structure and fabrication method for capacitors integratible with vertical replacement gate transistorsFiled 2001·Application pending·0 cites
- 3730US2003218218A1SRAM cell with reduced standby leakage current and method for forming the sameFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →