Inventor · disambiguated record
Hirohisa Iizuka
Also filed as: IIZUKA HIROHISA
21 granted patents·2 pending applications·441 citations·filing 1998–2008
96Inventor score
Files withTOSHIBA KK23
Top patents by PatentIndex Score
23 records- 0197US6222225B1Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 1999·Granted Apr 24, 2001·176 cites·9 claims
- 0289US7227781B2Semiconductor device provided with NAND strings and select gates having different gate lengthsTOSHIBA KK·Filed 2005·Granted Jun 5, 2007·14 cites·6 claims
- 0385US6413809B2Method of manufacturing a non-volatile memory having an element isolation insulation film embedded in the trenchTOSHIBA KK·Filed 2001·Granted Jul 2, 2002·27 cites·4 claims
- 0483US7196370B2Nonvolatile semiconductor memory device having trench-type isolation region, and method of fabricating the sameTOSHIBA KK·Filed 2004·Granted Mar 27, 2007·27 cites·19 claims
- 0583US6462373B2Nonvolatile semiconductor memory device having tapered portion on side wall of charge accumulation layerTOSHIBA KK·Filed 2000·Granted Oct 8, 2002·27 cites·13 claims
- 0682US6828627B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Dec 7, 2004·23 cites·19 claims
- 0781US6703669B1Semiconductor device having serially connected memory cell transistors provided between two current terminalsTOSHIBA KK·Filed 2000·Granted Mar 9, 2004·23 cites·18 claims
- 0880US6828624B1Nonvolatile semiconductor memory device covered with insulating film which is hard for an oxidizing agent to pass therethroughTOSHIBA KK·Filed 2000·Granted Dec 7, 2004·33 cites·28 claims
- 0978US7297599B2Method of fabricating semiconductor deviceTOSHIBA KK·Filed 2005·Granted Nov 20, 2007·6 cites·3 claims
- 1076US6639296B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Oct 28, 2003·13 cites·11 claims
- 1175US7195968B2Method of fabricating semiconductor deviceTOSHIBA KK·Filed 2005·Granted Mar 27, 2007·5 cites·4 claims
- 1272US6274434B1Method of making memory cell with shallow trench isolationTOSHIBA KK·Filed 1999·Granted Aug 14, 2001·22 cites·27 claims
- 1365US6828648B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Dec 7, 2004·7 cites·44 claims
- 1463US7782671B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Aug 24, 2010·5 cites·9 claims
- 1563US7364951B2Nonvolatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Apr 29, 2008·5 cites·11 claims
- 1660US7795667B2Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memoryTOSHIBA KK·Filed 2003·Granted Sep 14, 2010·7 cites·10 claims
- 1760US6747311B2Nonvolatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2002·Granted Jun 8, 2004·11 cites·9 claims
- 1854US6288942B1Nonvolatile semiconductor storage device and its manufacturing methodTOSHIBA KK·Filed 2000·Granted Sep 11, 2001·5 cites·12 claims
- 1948US7095085B2Nonvolatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Aug 22, 2006·5 cites·18 claims
- 2045US2007190727A1Nonvolatile semiconductor memory device and manufacturing method thereforTOSHIBA KK·Filed 2007·Application pending·0 cites
- 2140US2005073008A1Semiconductor deviceTOSHIBA KK·Filed 2004·Application pending·0 cites
- 2238US7238975B2Nonvolatile semiconductor memory device and manufacturing method thereforTOSHIBA KK·Filed 2004·Granted Jul 3, 2007·0 cites·10 claims
- 2331US6117729ANonvolatile semiconductor storage device and its manufacturing methodTOSHIBA KK·Filed 1998·Granted Sep 12, 2000·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →