Inventor · disambiguated record
Jeffrey Marks
Also filed as: MARKS JEFFREY · MARKS JEFFREY A · MARKS JEFFREY S
73 granted patents·29 pending applications·4,358 citations·filing 1991–2024
99Inventor score
Top patents by PatentIndex Score
102 records- 0198US11209729B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2019·Granted Dec 28, 2021·21 cites·14 claims
- 0298US10831096B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2018·Granted Nov 10, 2020·34 cites·18 claims
- 0398US10514598B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2017·Granted Dec 24, 2019·33 cites·10 claims
- 0498US9805941B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2017·Granted Oct 31, 2017·44 cites·26 claims
- 0598US9806252B2Dry plasma etch method to pattern MRAM stackLAM RES CORP·Filed 2015·Granted Oct 31, 2017·61 cites·20 claims
- 0698US9778561B2Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2015·Granted Oct 3, 2017·380 cites·9 claims
- 0798US9576811B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2015·Granted Feb 21, 2017·65 cites·26 claims
- 0898US9257638B2Method to etch non-volatile metal materialsLAM RES CORP·Filed 2014·Granted Feb 9, 2016·55 cites·18 claims
- 0997US12105422B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2020·Granted Oct 1, 2024·13 cites·12 claims
- 1097US10374144B2Dry plasma etch method to pattern MRAM stackLAM RES CORP·Filed 2017·Granted Aug 6, 2019·21 cites·16 claims
- 1197US10186426B2Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)LAM RES CORP·Filed 2017·Granted Jan 22, 2019·16 cites·21 claims
- 1297US10096487B2Atomic layer etching of tungsten and other metalsLAM RES CORP·Filed 2016·Granted Oct 9, 2018·24 cites·16 claims
- 1397US9130158B1Method to etch non-volatile metal materialsLAM RES CORP·Filed 2014·Granted Sep 8, 2015·44 cites·19 claims
- 1497US7271107B2Reduction of feature critical dimensions using multiple masksLAM RES CORP·Filed 2005·Granted Sep 18, 2007·134 cites·21 claims
- 1597US6518195B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 2000·Granted Feb 11, 2003·162 cites·8 claims
- 1697US5556501ASilicon scavenger in an inductively coupled RF plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted Sep 17, 1996·396 cites·15 claims
- 1796US10749103B2Dry plasma etch method to pattern MRAM stackLAM RES CORP·Filed 2019·Granted Aug 18, 2020·7 cites·10 claims
- 1896US9153486B2CVD based metal/semiconductor OHMIC contact for high volume manufacturing applicationsLAM RES CORP·Filed 2013·Granted Oct 6, 2015·31 cites·25 claims
- 1996US6488807B1Magnetic confinement in a plasma reactor having an RF bias electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Dec 3, 2002·145 cites·6 claims
- 2096US5399237AEtching titanium nitride using carbon-fluoride and carbon-oxide gasAPPLIED MATERIALS INC·Filed 1994·Granted Mar 21, 1995·275 cites·32 claims
- 2195US12510825B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2024·Granted Dec 30, 2025·2 cites·33 claims
- 2295US12510826B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2024·Granted Dec 30, 2025·2 cites·12 claims
- 2395US10056264B2Atomic layer etching of GaN and other III-V materialsLAM RES CORP·Filed 2016·Granted Aug 21, 2018·20 cites·20 claims
- 2495US9984858B2ALE smoothness: in and outside semiconductor industryLAM RES CORP·Filed 2016·Granted May 29, 2018·10 cites·20 claims
- 2595US5888414APlasma reactor and processes using RF inductive coupling and scavenger temperature controlAPPLIED MATERIALS INC·Filed 1997·Granted Mar 30, 1999·203 cites·31 claims
- 2695US5477975APlasma etch apparatus with heated scavenging surfacesAPPLIED MATERIALS INC·Filed 1993·Granted Dec 26, 1995·86 cites·49 claims
- 2795US5423945ASelectivity for etching an oxide over a nitrideAPPLIED MATERIALS INC·Filed 1992·Granted Jun 13, 1995·220 cites·22 claims
- 2894US12119243B2Plasma etching chemistries of high aspect ratio features in dielectricsLAM RES CORP·Filed 2023·Granted Oct 15, 2024·1 cites·5 claims
- 2994US10515816B2Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)LAM RES CORP·Filed 2018·Granted Dec 24, 2019·6 cites·18 claims
- 3093US6545420B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 1995·Granted Apr 8, 2003·135 cites·13 claims
- 3193US6068784AProcess used in an RF coupled plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted May 30, 2000·173 cites·28 claims
- 3293US5350479AElectrostatic chuck for high power plasma processingAPPLIED MATERIALS INC·Filed 1992·Granted Sep 27, 1994·199 cites·32 claims
- 3392US6444137B1Method for processing substrates using gaseous silicon scavengerAPPLIED MATERIALS INC·Filed 1996·Granted Sep 3, 2002·127 cites·19 claims
- 3492US6251792B1Plasma etch processesAPPLIED MATERIALS INC·Filed 1997·Granted Jun 26, 2001·122 cites·18 claims
- 3591US2025053080A1Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2024·Application pending·0 cites
- 3690US8251702B2Methods and apparatus for online auctions and market-places utilizing program termsMARKS JEFFREY S·Filed 2010·Granted Aug 28, 2012·27 cites·17 claims
- 3790US6578757B1Photo mailerFiled 2002·Granted Jun 17, 2003·18 cites·3 claims
- 3890US6362110B1Enhanced resist strip in a dielectric etcher using downstream plasmaLAM RES CORP·Filed 2000·Granted Mar 26, 2002·46 cites·9 claims
- 3990US6024826APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Feb 15, 2000·100 cites·68 claims
- 4089US10304659B2Ale smoothness: in and outside semiconductor industryLAM RES CORP·Filed 2018·Granted May 28, 2019·4 cites·20 claims
- 4189US8545229B2Methods and apparatus for online auctions and market-places utilizing program termsMARKS JEFFREY S·Filed 2012·Granted Oct 1, 2013·10 cites·21 claims
- 4289US7720743B1Methods and apparatus for online auctions and market-places utilizing program termsMARKS JEFFREY S·Filed 2000·Granted May 18, 2010·64 cites·15 claims
- 4387US6280297B1Apparatus and method for distribution of slurry in a chemical mechanical polishing systemAPPLIED MATERIALS INC·Filed 2000·Granted Aug 28, 2001·24 cites·15 claims
- 4486US6399514B1High temperature silicon surface providing high selectivity in an oxide etch processAPPLIED MATERIALS INC·Filed 2000·Granted Jun 4, 2002·30 cites·23 claims
- 4585US10825680B2Directional deposition on patterned structuresLAM RES CORP·Filed 2018·Granted Nov 3, 2020·3 cites·21 claims
- 4685US6218312B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Apr 17, 2001·61 cites·36 claims
- 4784US9391267B2Method to etch non-volatile metal materialsLAM RES CORP·Filed 2015·Granted Jul 12, 2016·3 cites·20 claims
- 4884US7405521B2Multiple frequency plasma processor method and apparatusLAM RES CORP·Filed 2003·Granted Jul 29, 2008·35 cites·45 claims
- 4984US5899801AMethod and apparatus for removing a substrate from a polishing pad in a chemical mechanical polishing systemAPPLIED MATERIALS INC·Filed 1996·Granted May 4, 1999·65 cites·13 claims
- 5084US2023273516A1Vacuum-integrated hardmask processes and apparatusLAM RES CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 102 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →