Inventor · disambiguated record
Hsingya Arthur Wang
Also filed as: WANG HSINGYA A · WANG HSINGYA ARTHUR
38 granted patents·6 pending applications·1,019 citations·filing 1985–2021
98Inventor score
Files withADVANCED MICRO DEVICES INC17HYNIX SEMICONDUCTOR INC9HYUNDAI ELECTRONICS AMERICA5HYNIX SEMICONDUCTOR AMERICA INC4INTEGRATED SILICON SOLUTION INC4
Top patents by PatentIndex Score
44 records- 0193US6169693B1Self-convergence of post-erase threshold voltages in a flash memory cell using transient responseHYUNDAI ELECTRONICS AMERICA·Filed 1999·Granted Jan 2, 2001·122 cites·7 claims
- 0293US6026026ASelf-convergence of post-erase threshold voltages in a flash memory cell using transient responseHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Feb 15, 2000·125 cites·14 claims
- 0393US5553018ANonvolatile memory cell formed using self aligned source implantADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 3, 1996·91 cites·4 claims
- 0493US4992391AProcess for fabricating a control gate for a floating gate FETADVANCED MICRO DEVICES INC·Filed 1989·Granted Feb 12, 1991·90 cites·15 claims
- 0592US5656513ANonvolatile memory cell formed using self aligned source implantADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 12, 1997·80 cites·16 claims
- 0691US6559008B2Non-volatile memory cells with selectively formed floating gateHYNIX SEMICONDUCTOR AMERICA INC·Filed 2001·Granted May 6, 2003·59 cites·24 claims
- 0787US6812515B2Polysilicon layers structure and method of forming sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 2, 2004·33 cites·9 claims
- 0885US6746906B2Transistor with ultra-short gate feature and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jun 8, 2004·23 cites·4 claims
- 0985US4635347AMethod of fabricating titanium silicide gate electrodes and interconnectionsADVANCED MICRO DEVICES INC·Filed 1985·Granted Jan 13, 1987·70 cites·5 claims
- 1084US6818504B2Processes and structures for self-aligned contact non-volatile memory with peripheral transistors easily modifiable for various technologies and applicationsHYNIX SEMICONDUCTOR AMERICA INC·Filed 2001·Granted Nov 16, 2004·40 cites·30 claims
- 1179US6777741B2Non-volatile memory cells with selectively formed floating gateHYNIX SEMICONDUCTOR AMERICA INC·Filed 2003·Granted Aug 17, 2004·22 cites·19 claims
- 1278US6043123ATriple well flash memory fabrication processHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Mar 28, 2000·38 cites·2 claims
- 1377US5763307ABlock select transistor and method of fabricationADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 9, 1998·39 cites·17 claims
- 1475US5013675AMethod of forming and removing polysilicon lightly doped drain spacersADVANCED MICRO DEVICES INC·Filed 1989·Granted May 7, 1991·32 cites·8 claims
- 1572US8288219B2Method of forming a non-volatile memory cell using off-set spacersRABKIN PETER·Filed 2008·Granted Oct 16, 2012·2 cites·8 claims
- 1671US6849489B2Method for forming transistors with ultra-short gate featureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Feb 1, 2005·8 cites·2 claims
- 1769US7154141B2Source side programmingHYUNDAI ELECTRONICS AMERICA·Filed 2001·Granted Dec 26, 2006·16 cites·20 claims
- 1866US5776811ASimplified process for fabricating flash eeprom cellsADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 7, 1998·25 cites·7 claims
- 1965US11616145B2FINFET stack gate memory and method of forming thereofINTEGRATED SILICON SOLUTION INC·Filed 2021·Granted Mar 28, 2023·0 cites·9 claims
- 2064US7202134B2Method of forming transistors with ultra-short gate featureHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Apr 10, 2007·5 cites·4 claims
- 2161US5831901AMethod of programming a memory cell to contain multiple valuesADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 3, 1998·21 cites·8 claims
- 2260US6876582B2Flash memory cell erase scheme using both source and channel regionsHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 5, 2005·10 cites·22 claims
- 2359US12021059B2Wafer-bonding structure and method of forming thereofINTEGRATED SILICON SOLUTION INC·Filed 2021·Granted Jun 25, 2024·0 cites·5 claims
- 2459US7160774B2Method of forming polysilicon layers in non-volatile memoryHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·6 cites·11 claims
- 2559US2021143275A1Finfet stack gate memory and mehod of forming thereofINTEGRATED SILICON SOLUTION INC·Filed 2020·Application pending·0 cites
- 2654US8946003B2Method of forming transistors with ultra-short gate featureRABKIN PETER·Filed 2007·Granted Feb 3, 2015·0 cites·9 claims
- 2752US5920506AMethod and apparatus for bulk preprogramming flash memory cells with minimal source and drain currentsHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Jul 6, 1999·15 cites·14 claims
- 2852US2021296281A1Wafer-bonding structure and method of forming thereofINTEGRATED SILICON SOLUTION INC·Filed 2020·Application pending·0 cites
- 2950US6911370B2Flash memory device having poly spacersHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jun 28, 2005·3 cites·12 claims
- 3048US2010096610A1Phase-change material memory cellWANG HSINGYA A·Filed 2009·Application pending·0 cites
- 3147US2006252193A1Method of forming polysilicon layers in a transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 3246US7250341B2Flash memory device having poly spacersHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jul 31, 2007·0 cites·12 claims
- 3346US5981364AMethod of forming a silicon gate to produce silicon devices with improved performanceADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 9, 1999·10 cites·8 claims
- 3441US6509237B2Flash memory cell fabrication sequenceHYNIX SEMICONDUCTOR AMERICA INC·Filed 2001·Granted Jan 21, 2003·3 cites·11 claims
- 3541US2002123180A1Transistor and memory cell with ultra-short gate feature and method of fabricating the sameFiled 2001·Application pending·0 cites
- 3640US5908318AMethod of forming low capacitance interconnect structures on semiconductor substratesADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 1, 1999·10 cites·26 claims
- 3740US5899726AMethod of forming oxide isolation in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted May 4, 1999·8 cites·11 claims
- 3836US5747882ADevice including means for preventing tungsten silicide lifting, and method of fabrication thereofADVANCED MICRO DEVICES INC·Filed 1996·Granted May 5, 1998·4 cites·4 claims
- 3935US5728453AMethod of fabricating topside structure of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 17, 1998·6 cites·11 claims
- 4033US5882985AReduction of field oxide step height during semiconductor fabricationADVANCED MICRO DEVICES INC·Filed 1995·Granted Mar 16, 1999·3 cites·15 claims
- 4133US2004152260A1Non-volatile memory cell with non-uniform surface floating gate and control gateFiled 2001·Application pending·0 cites
- 4230US5866467AMethod of improving oxide isolation in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 2, 1999·0 cites·6 claims
- 4330US5818082AE2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereofADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 6, 1998·0 cites·8 claims
- 4425US5989938AMethod of fabricating topside structure of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 23, 1999·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →