Inventor · disambiguated record
Francimar Schmitt
Also filed as: SCHMITT FRANCIMAR · SCHMITT FRANCIMAR C · SCHMITT FRANCIMAR CAMPANA
14 granted patents·19 pending applications·151 citations·filing 2003–2023
93Inventor score
Top patents by PatentIndex Score
33 records- 0196US7422776B2Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·33 cites·7 claims
- 0294US7226876B2Method of modifying interlayer adhesionAPPLIED MATERIALS INC·Filed 2005·Granted Jun 5, 2007·14 cites·7 claims
- 0392US6913992B2Method of modifying interlayer adhesionAPPLIED MATERIALS INC·Filed 2003·Granted Jul 5, 2005·34 cites·2 claims
- 0490US7189658B2Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profileAPPLIED MATERIALS INC·Filed 2005·Granted Mar 13, 2007·11 cites·20 claims
- 0587US7563728B2Methods of modifying interlayer adhesionAPPLIED MATERIALS INC·Filed 2007·Granted Jul 21, 2009·5 cites·15 claims
- 0687US7259111B2Interface engineering to improve adhesion between low k stacksAPPLIED MATERIALS INC·Filed 2005·Granted Aug 21, 2007·14 cites·17 claims
- 0784US7960294B2Method of modifying interlayer adhesionAPPLIED MATERIALS INC·Filed 2009·Granted Jun 14, 2011·3 cites·15 claims
- 0882US8569166B2Methods of modifying interlayer adhesionSCHMITT FRANCIMAR CAMPANA·Filed 2011·Granted Oct 29, 2013·2 cites·6 claims
- 0982US7611996B2Multi-stage curing of low K nano-porous filmsAPPLIED MATERIALS INC·Filed 2005·Granted Nov 3, 2009·10 cites·7 claims
- 1082US7547643B2Techniques promoting adhesion of porous low K film to underlying barrier layerAPPLIED MATERIALS INC·Filed 2005·Granted Jun 16, 2009·6 cites·17 claims
- 1179US7273823B2Situ oxide cap layer developmentAPPLIED MATERIALS INC·Filed 2005·Granted Sep 25, 2007·3 cites·20 claims
- 1273US9449278B2Cloud-based diagnostics and remediationAPPLE INC·Filed 2013·Granted Sep 20, 2016·12 cites·11 claims
- 1371US7910897B2Process and apparatus for post deposition treatment of low dielectric materialsAPPLIED MATERIALS INC·Filed 2007·Granted Mar 22, 2011·4 cites·19 claims
- 1457US2013012030A1Method and apparatus for remote plasma source assisted silicon-containing film depositionAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 1555US2024044656A1Searching for stops in multistop routesAPPLE INC·Filed 2023·Application pending·0 cites
- 1654US2008105978A1Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosityAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 1754US2008107573A1Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosityAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 1853US2023366684A1Multipoint routing & distribution of search results along routeAPPLE INC·Filed 2023·Application pending·0 cites
- 1952US2008044594A1Stress reduction of sioc low k film by addition of alkylenes to omcts based processesAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2052US2008099920A1Multi-stage curing of low k nano-porous filmsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 2151US2011114177A1Mixed silicon phase film for high efficiency thin film silicon solar cellsAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 2250US9157151B2Elimination of first wafer effect for PECVD filmsLAKSHMANAN ANNAMALAI·Filed 2007·Granted Oct 13, 2015·0 cites·19 claims
- 2350US2011171774A1Cleaning optimization of pecvd solar filmsAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 2449US2005227502A1Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosityAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2548US2010087062A1High temperature bd development for memory applicationsAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2645US2005250346A1Process and apparatus for post deposition treatment of low k dielectric materialsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2745US2008182403A1Uv curing of pecvd-deposited sacrificial polymer films for air-gap ildNOORI ATIF·Filed 2008·Application pending·0 cites
- 2844US2009197086A1Elimination of photoresist material collapse and poisoning in 45-nm feature size using dry or immersion lithographyRATHI SUDHA·Filed 2008·Application pending·0 cites
- 2942US2008050932A1Overall defect reduction for PECVD filmsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3041US2004253378A1Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processesAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3138US2005214457A1Deposition of low dielectric constant films by N2O additionAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3238US2005037153A1Stress reduction of sioc low k filmsAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3335US2012171852A1Remote hydrogen plasma source of silicon containing film depositionYUAN ZHENG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →