Inventor · disambiguated record
Peter Loewenhardt
Also filed as: LOEWENHARDT PETER · LOEWENHARDT PETER K
59 granted patents·3 pending applications·3,164 citations·filing 1994–2011
99Inventor score
Top patents by PatentIndex Score
62 records- 0198US6841943B2Plasma processor with electrode simultaneously responsive to plural frequenciesLAM RES CORP·Filed 2002·Granted Jan 11, 2005·115 cites·70 claims
- 0298US6418874B1Toroidal plasma source for plasma processingAPPLIED MATERIALS INC·Filed 2000·Granted Jul 16, 2002·272 cites·19 claims
- 0397US6755150B2Multi-core transformer plasma sourceAPPLIED MATERIALS INC·Filed 2001·Granted Jun 29, 2004·79 cites·10 claims
- 0497US6673199B1Shaping a plasma with a magnetic field to control etch rate uniformityAPPLIED MATERIALS INC·Filed 2001·Granted Jan 6, 2004·107 cites·39 claims
- 0597US6558564B1Plasma energy control by inducing plasma instabilityAPPLIED MATERIALS INC·Filed 2000·Granted May 6, 2003·171 cites·4 claims
- 0696US6352049B1Plasma assisted processing chamber with separate control of species densityAPPLIED MATERIALS INC·Filed 1998·Granted Mar 5, 2002·498 cites·24 claims
- 0796US6189484B1Plasma reactor having a helicon wave high density plasma sourceAPPLIED MATERIALS INC·Filed 1999·Granted Feb 20, 2001·116 cites·44 claims
- 0894US6185839B1Semiconductor process chamber having improved gas distributorAPPLIED MATERIALS INC·Filed 1998·Granted Feb 13, 2001·83 cites·44 claims
- 0994US5451784AComposite diagnostic wafer for semiconductor wafer processing systemsAPPLIED MATERIALS INC·Filed 1994·Granted Sep 19, 1995·83 cites·31 claims
- 1093US7363876B2Multi-core transformer plasma sourceAPPLIED MATERIALS INC·Filed 2004·Granted Apr 29, 2008·37 cites·8 claims
- 1193US7244336B2Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate driftLAM RES CORP·Filed 2003·Granted Jul 17, 2007·67 cites·25 claims
- 1293US6270687B1RF plasma methodAPPLIED MATERIALS INC·Filed 2000·Granted Aug 7, 2001·42 cites·28 claims
- 1393US5753044ARF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1995·Granted May 19, 1998·91 cites·121 claims
- 1492US6744212B2Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditionsLAM RES CORP·Filed 2002·Granted Jun 1, 2004·94 cites·15 claims
- 1592US6471822B1Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasmaAPPLIED MATERIALS INC·Filed 1999·Granted Oct 29, 2002·88 cites·50 claims
- 1692US6071372ARF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber wallsAPPLIED MATERIALS INC·Filed 1997·Granted Jun 6, 2000·69 cites·49 claims
- 1791US7169231B2Gas distribution system with tuning gasLAM RES CORP·Filed 2002·Granted Jan 30, 2007·47 cites·13 claims
- 1890US6402885B2Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasmaAPPLIED MATERIALS INC·Filed 2001·Granted Jun 11, 2002·42 cites·14 claims
- 1989US6085688AMethod and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 1998·Granted Jul 11, 2000·52 cites·54 claims
- 2089US5900062ALift pin for dechucking substratesAPPLIED MATERIALS INC·Filed 1995·Granted May 4, 1999·102 cites·39 claims
- 2189US5897712APlasma uniformity control for an inductive plasma sourceAPPLIED MATERIALS INC·Filed 1996·Granted Apr 27, 1999·63 cites·27 claims
- 2288US6449871B1Semiconductor process chamber having improved gas distributorAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·26 cites·37 claims
- 2388US6247425B1Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 2000·Granted Jun 19, 2001·28 cites·25 claims
- 2487US6270617B1RF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1997·Granted Aug 7, 2001·48 cites·49 claims
- 2587US5817534ARF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafersAPPLIED MATERIALS INC·Filed 1995·Granted Oct 6, 1998·94 cites·23 claims
- 2686US7601246B2Methods of sputtering a protective coating on a semiconductor substrateLAM RES CORP·Filed 2004·Granted Oct 13, 2009·56 cites·29 claims
- 2786US7371332B2Uniform etch systemLAM RES CORP·Filed 2003·Granted May 13, 2008·29 cites·11 claims
- 2884US8430970B2Methods for preventing corrosion of plasma-exposed yttria-coated constituentsSWAMI GANAPATHY·Filed 2010·Granted Apr 30, 2013·8 cites·15 claims
- 2983US6508198B1Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor waferAPPLIED MATERIALS INC·Filed 2000·Granted Jan 21, 2003·23 cites·27 claims
- 3083US6475335B1RF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 2000·Granted Nov 5, 2002·18 cites·162 claims
- 3183US6030486AMagnetically confined plasma reactor for processing a semiconductor waferAPPLIED MATERIALS INC·Filed 1996·Granted Feb 29, 2000·55 cites·56 claims
- 3283US5777289ARF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1996·Granted Jul 7, 1998·35 cites·13 claims
- 3382US7861667B2Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrodeLAM RES CORP·Filed 2003·Granted Jan 4, 2011·23 cites·31 claims
- 3482US7294580B2Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon additionLAM RES CORP·Filed 2004·Granted Nov 13, 2007·29 cites·20 claims
- 3582US6949460B2Line edge roughness reduction for trench etchLAM RES CORP·Filed 2003·Granted Sep 27, 2005·25 cites·12 claims
- 3682US6569775B1Method for enhancing plasma processing performanceAPPLIED MATERIALS INC·Filed 2000·Granted May 27, 2003·28 cites·28 claims
- 3781US6712020B2Toroidal plasma source for plasma processingAPPLIED MATERIALS INC·Filed 2002·Granted Mar 30, 2004·15 cites·9 claims
- 3880US5801386AApparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using sameAPPLIED MATERIALS INC·Filed 1996·Granted Sep 1, 1998·36 cites·25 claims
- 3980US5779926APlasma process for etching multicomponent alloysAPPLIED MATERIALS INC·Filed 1996·Granted Jul 14, 1998·62 cites·35 claims
- 4078US7597816B2Wafer bevel polymer removalLAM RES CORP·Filed 2004·Granted Oct 6, 2009·21 cites·20 claims
- 4177US6248250B1RF plasma reactor with hybrid conductor and multi-radius dome ceilingAPPLIED MATERIALS INC·Filed 1997·Granted Jun 19, 2001·29 cites·31 claims
- 4273US6581612B1Chamber cleaning with fluorides of iodineAPPLIED MATERIALS INC·Filed 2001·Granted Jun 24, 2003·15 cites·9 claims
- 4371US7226852B1Preventing damage to low-k materials during resist strippingLAM RES CORP·Filed 2004·Granted Jun 5, 2007·13 cites·20 claims
- 4468US6356097B1Capacitive probe for in situ measurement of wafer DC bias voltageAPPLIED MATERIALS INC·Filed 1999·Granted Mar 12, 2002·33 cites·32 claims
- 4567US5565681AIon energy analyzer with an electrically controlled geometric filterAPPLIED MATERIALS INC·Filed 1995·Granted Oct 15, 1996·31 cites·23 claims
- 4666US8573153B2Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrodeFISCHER ANDREAS·Filed 2010·Granted Nov 5, 2013·1 cites·14 claims
- 4763US8801892B2Uniform etch systemLARSON DEAN J·Filed 2008·Granted Aug 12, 2014·1 cites·7 claims
- 4862US7385287B2Preventing damage to low-k materials during resist strippingLAM RES CORP·Filed 2007·Granted Jun 10, 2008·1 cites·20 claims
- 4962US7078350B2Methods for the optimization of substrate etching in a plasma processing systemLAM RES CORP·Filed 2004·Granted Jul 18, 2006·11 cites·35 claims
- 5060US6822185B2Temperature controlled dome-coil system for high power inductively coupled plasma systemsAPPLIED MATERIALS INC·Filed 2002·Granted Nov 23, 2004·7 cites·56 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →