Inventor · disambiguated record
Eric N. Paton
Also filed as: PATON ERIC · PATON ERIC N
74 granted patents·4 pending applications·4,724 citations·filing 1998–2008
99Inventor score
Files withADVANCED MICRO DEVICES INC71GLOBALFOUNDRIES INC2SPANSION LLC2APPLIED MATERIALS INC1PATON ERIC N1
Top patents by PatentIndex Score
78 records- 0199US6682973B1Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applicationsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 27, 2004·595 cites·18 claims
- 0299US6646307B1MOSFET having a double gateADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 11, 2003·1.5k cites·18 claims
- 0398US6703648B1Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 9, 2004·200 cites·9 claims
- 0497US6465334B1Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·154 cites·18 claims
- 0596US7402207B1Method and apparatus for controlling the thickness of a selective epitaxial growth layerADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 22, 2008·104 cites·12 claims
- 0696US6811448B1Pre-cleaning for silicidation in an SMOS processADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·123 cites·20 claims
- 0796US6787864B2Mosfets incorporating nickel germanosilicided gate and methods for their formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 7, 2004·126 cites·21 claims
- 0896US6475874B2Damascene NiSi metal gate high-k transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 5, 2002·137 cites·14 claims
- 0995US6562718B1Process for forming fully silicided gatesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·107 cites·18 claims
- 1095US6300203B1Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 9, 2001·101 cites·2 claims
- 1194US7456062B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 25, 2008·25 cites·21 claims
- 1293US6297159B1Method and apparatus for chemical polishing using field responsive materialsADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 2, 2001·128 cites·20 claims
- 1392US6703277B1Reducing agent for high-K gate dielectric parasitic interfacial layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 9, 2004·61 cites·20 claims
- 1492US6656749B1In-situ monitoring during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 2, 2003·57 cites·11 claims
- 1591US6966235B1Remote monitoring of critical parameters for calibration of manufacturing equipment and facilitiesPATON ERIC N·Filed 2000·Granted Nov 22, 2005·78 cites·1 claims
- 1691US6967160B1Method of manufacturing semiconductor device having nickel silicide with reduced interface roughnessADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 22, 2005·18 cites·14 claims
- 1791US6878592B1Selective epitaxy to improve silicidationADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 12, 2005·51 cites·22 claims
- 1891US6465309B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·57 cites·14 claims
- 1990US6632729B1Laser thermal annealing of high-k gate oxide layersADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 14, 2003·53 cites·15 claims
- 2090US6555439B1Partial recrystallization of source/drain region before laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·53 cites·14 claims
- 2189US6680250B1Formation of deep amorphous region to separate junction from end-of-range defectsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·43 cites·12 claims
- 2289US6602781B1Metal silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 5, 2003·52 cites·27 claims
- 2388US6867428B1Strained silicon NMOS having silicon source/drain extensions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 15, 2005·46 cites·10 claims
- 2488US6812106B1Reduced dopant deactivation of source/drain extensions using laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·38 cites·15 claims
- 2588US6297107B1High dielectric constant materials as gate dielectricsADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 2, 2001·52 cites·13 claims
- 2687US6368950B1Silicide gate transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·41 cites·24 claims
- 2784US6812550B1Wafer pattern variation of integrated circuit fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·27 cites·20 claims
- 2884US6730576B1Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layerADVANCED MICRO DEVICES INC·Filed 2002·Granted May 4, 2004·28 cites·20 claims
- 2983US6514859B1Method of salicide formation with a double gate silicideADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 4, 2003·33 cites·24 claims
- 3082US7402485B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 22, 2008·9 cites·16 claims
- 3182US6559051B1Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistorsADVANCED MICRO DEVICES INC·Filed 2000·Granted May 6, 2003·33 cites·19 claims
- 3281US6825115B1Post silicide laser thermal annealing to avoid dopant deactivationADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 30, 2004·28 cites·13 claims
- 3381US6780789B1Laser thermal oxidation to form ultra-thin gate oxideADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 24, 2004·24 cites·7 claims
- 3480US7241700B1Methods for post offset spacer clean for improved selective epitaxy silicon growthADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 10, 2007·22 cites·24 claims
- 3580US6797614B1Nickel alloy for SMOS process silicidationADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 28, 2004·24 cites·34 claims
- 3679US6924182B1Strained silicon MOSFET having reduced leakage and method of its formationADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 2, 2005·26 cites·20 claims
- 3778US6743689B1Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensionsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 1, 2004·21 cites·15 claims
- 3878US6342414B1Damascene NiSi metal gate high-k transistorADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 29, 2002·24 cites·18 claims
- 3977US7256141B1Interface layer between dual polycrystalline silicon layersSPANSION LLC·Filed 2005·Granted Aug 14, 2007·5 cites·11 claims
- 4077US6867080B1Polysilicon tilting to prevent geometry effects during laser thermal annealingADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 15, 2005·19 cites·16 claims
- 4176US6727176B2Method of forming reliable Cu interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 27, 2004·22 cites·15 claims
- 4276US6689688B2Method and device using silicide contacts for semiconductor processingADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 10, 2004·21 cites·26 claims
- 4376US6432805B1Co-deposition of nitrogen and metal for metal silicide formationADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 13, 2002·21 cites·12 claims
- 4476US6048790AMetalorganic decomposition deposition of thin conductive films on integrated circuits using reducing ambientADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 11, 2000·48 cites·10 claims
- 4575US6638861B1Method of eliminating voids in W plugsADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 28, 2003·20 cites·16 claims
- 4674US6399467B1Method of salicide formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 4, 2002·19 cites·16 claims
- 4773US7071065B1Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 4, 2006·15 cites·19 claims
- 4872US6905923B1Offset spacer process for forming N-type transistorsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 14, 2005·16 cites·21 claims
- 4971US7033916B1Shallow junction semiconductor and method for the fabrication thereofADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·13 cites·14 claims
- 5071US6605513B2Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processingADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 12, 2003·16 cites·10 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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