Inventor · disambiguated record
Nicolas Sassiat
Also filed as: SASSIAT NICOLAS
13 granted patents·5 pending applications·16 citations·filing 2013–2018
85Inventor score
Top patents by PatentIndex Score
18 records- 0189US9812573B1Semiconductor structure including a transistor having stress creating regions and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·7 cites·20 claims
- 0272US9960284B2Semiconductor structure including a varactorGLOBALFOUNDRIES INC·Filed 2015·Granted May 1, 2018·2 cites·21 claims
- 0369US9263270B2Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structureGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 16, 2016·2 cites·20 claims
- 0464US8951877B2Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatmentGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 10, 2015·1 cites·14 claims
- 0560US9029214B2Integrated circuits and methods for fabricating integrated circuits with improved silicide contactsGLOBALFOUNDRIES INC·Filed 2013·Granted May 12, 2015·1 cites·19 claims
- 0659US9231045B2Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated therebyGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 5, 2016·1 cites·15 claims
- 0758US9136266B2Gate oxide quality for complex MOSFET devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 15, 2015·1 cites·14 claims
- 0857US8999803B2Methods for fabricating integrated circuits with the implantation of fluorineGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Apr 7, 2015·1 cites·9 claims
- 0949US9620589B2Integrated circuits and methods of fabrication thereofGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 11, 2017·0 cites·2 claims
- 1048US10886419B2Semiconductor structure including a varactor and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 5, 2021·0 cites·20 claims
- 1148US9460955B2Integrated circuits with shallow trench isolations, and methods for producing the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 4, 2016·0 cites·18 claims
- 1246US9396950B2Low thermal budget schemes in semiconductor device fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 19, 2016·0 cites·16 claims
- 1342US8877582B2Methods of inducing a desired stress in the channel region of a transistor by performing ion implantation/anneal processes on the gate electrodeGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 4, 2014·0 cites·25 claims
- 1441US2014264626A1Method for forming a gate electrode of a semiconductor device, gate electrode structure for a semiconductor device and according semiconductor device structureGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 1541US2014264484A1Fluorine-doped channel silicon-germanium layerSASSIAT NICOLAS·Filed 2013·Application pending·0 cites
- 1641US2015076618A1Integrated circuits with a corrugated gate, and methods for producing the sameGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1740US2014248749A1Stress memorization techniqueGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 1839US2014256097A1Methods for forming integrated circuit systems employing fluorine dopingGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →