Inventor · disambiguated record
Keith E. Fogel
Also filed as: FOGEL KEITH · FOGEL KEITH E · FOGEL KEITH EDWARD
272 granted patents·103 pending applications·7,965 citations·filing 1990–2023
99Inventor score
Top patents by PatentIndex Score
375 records- 0199US6708403B2Angled flying lead wire bonding processIBM·Filed 2003·Granted Mar 23, 2004·194 cites·31 claims
- 0299US6526655B2Angled flying lead wire bonding processIBM·Filed 2001·Granted Mar 4, 2003·188 cites·26 claims
- 0399US6334247B1High density integrated circuit apparatus, test probe and methods of use thereofIBM·Filed 1997·Granted Jan 1, 2002·277 cites·80 claims
- 0499US5821763ATest probe for high density integrated circuits, methods of fabrication thereof and methods of use thereofIBM·Filed 1996·Granted Oct 13, 1998·349 cites·13 claims
- 0599US5635846ATest probe having elongated conductor embedded in an elostomeric material which is mounted on a space transformerIBM·Filed 1993·Granted Jun 3, 1997·342 cites·7 claims
- 0699US5371654AThree dimensional high performance interconnection packageIBM·Filed 1992·Granted Dec 6, 1994·503 cites·25 claims
- 0798US9514995B1Implant-free punch through doping layer formation for bulk FinFET structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 6, 2016·22 cites·7 claims
- 0898US8247261B2Thin substrate fabrication using stress-induced substrate spallingBEDELL STEPHEN W·Filed 2010·Granted Aug 21, 2012·55 cites·8 claims
- 0998US7967062B2Thermally conductive composite interface, cooled electronic assemblies employing the same, and methods of fabrication thereofIBM·Filed 2006·Granted Jun 28, 2011·111 cites·11 claims
- 1098US7772096B2Formation of SOI by oxidation of silicon with engineered porosity gradientINTERNAT MACHINES CORP·Filed 2008·Granted Aug 10, 2010·201 cites·9 claims
- 1198US7358166B2Relaxed, low-defect SGOI for strained Si CMOS applicationsIBM·Filed 2005·Granted Apr 15, 2008·62 cites·23 claims
- 1298US6300780B1High density integrated circuit apparatus, test probe and methods of use thereofIBM·Filed 1998·Granted Oct 9, 2001·197 cites·17 claims
- 1398US6206273B1Structures and processes to create a desired probetip contact geometry on a wafer test probeIBM·Filed 1999·Granted Mar 27, 2001·206 cites·9 claims
- 1498US5898991AMethods of fabrication of coaxial vias and magnetic devicesIBM·Filed 1997·Granted May 4, 1999·219 cites·21 claims
- 1598US5531022AMethod of forming a three dimensional high performance interconnection packageIBM·Filed 1994·Granted Jul 2, 1996·328 cites·15 claims
- 1697US9754875B1Designable channel FinFET fuseIBM·Filed 2016·Granted Sep 5, 2017·14 cites·11 claims
- 1797US9379204B2Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on siliconIBM·Filed 2015·Granted Jun 28, 2016·16 cites·17 claims
- 1897US9096050B2Wafer scale epitaxial graphene transferIBM·Filed 2013·Granted Aug 4, 2015·34 cites·18 claims
- 1997US9035282B2Formation of large scale single crystalline grapheneIBM·Filed 2013·Granted May 19, 2015·26 cites·6 claims
- 2097US7547616B2Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometricsIBM·Filed 2006·Granted Jun 16, 2009·30 cites·1 claims
- 2197US7495342B2Angled flying lead wire bonding processIBM·Filed 2003·Granted Feb 24, 2009·109 cites·29 claims
- 2297US6541356B2Ultimate SIMOXIBM·Filed 2001·Granted Apr 1, 2003·124 cites·38 claims
- 2397US6332270B2Method of making high density integral test probeIBM·Filed 1998·Granted Dec 25, 2001·231 cites·12 claims
- 2497US6295729B1Angled flying lead wire bonding processIBM·Filed 1998·Granted Oct 2, 2001·206 cites·8 claims
- 2597US6062879AHigh density test probe with rigid surface structureIBM·Filed 1998·Granted May 16, 2000·150 cites·7 claims
- 2697US5810607AInterconnector with contact pads having enhanced durabilityIBM·Filed 1995·Granted Sep 22, 1998·244 cites·18 claims
- 2797US5785538AHigh density test probe with rigid surface structureIBM·Filed 1996·Granted Jul 28, 1998·147 cites·17 claims
- 2897US5541567ACoaxial vias in an electronic substrateIBM·Filed 1994·Granted Jul 30, 1996·163 cites·38 claims
- 2996US9570295B1Protective capping layer for spalled gallium nitrideIBM·Filed 2016·Granted Feb 14, 2017·10 cites·20 claims
- 3096US8450184B2Thin substrate fabrication using stress-induced spallingBEDELL STEPHEN W·Filed 2012·Granted May 28, 2013·17 cites·9 claims
- 3196US7736152B2Land grid array fabrication using elastomer core and conducting metal shell or meshIBM·Filed 2008·Granted Jun 15, 2010·37 cites·1 claims
- 3296US7538565B1High density integrated circuit apparatus, test probe and methods of use thereofIBM·Filed 1999·Granted May 26, 2009·112 cites·40 claims
- 3396US6991998B2Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transferIBM·Filed 2004·Granted Jan 31, 2006·101 cites·18 claims
- 3496US5811982AHigh density cantilevered probe for electronic devicesIBM·Filed 1996·Granted Sep 22, 1998·310 cites·13 claims
- 3595US9748353B2Method of making a gallium nitride deviceIBM·Filed 2015·Granted Aug 29, 2017·9 cites·15 claims
- 3695US9123838B2Transparent conductive electrode for three dimensional photovoltaic deviceFOGEL KEITH E·Filed 2012·Granted Sep 1, 2015·11 cites·8 claims
- 3795US8946033B2Merged fin finFET with (100) sidewall surfaces and method of making sameADAM THOMAS N·Filed 2012·Granted Feb 3, 2015·21 cites·13 claims
- 3895US8642378B1Field-effect inter-digitated back contact photovoltaic deviceIBM·Filed 2012·Granted Feb 4, 2014·10 cites·20 claims
- 3995US6722032B2Method of forming a structure for electronic devices contact locationsIBM·Filed 2001·Granted Apr 20, 2004·79 cites·16 claims
- 4095US6528984B2Integrated compliant probe for wafer level test and burn-inIBM·Filed 1997·Granted Mar 4, 2003·178 cites·12 claims
- 4195US6054651AFoamed elastomers for wafer probing applications and interposer connectorsIBM·Filed 1996·Granted Apr 25, 2000·128 cites·7 claims
- 4295US4975079AConnector assembly for chip testingIBM·Filed 1990·Granted Dec 4, 1990·240 cites·10 claims
- 4394US10090287B1Deep high capacity capacitor for bulk substratesIBM·Filed 2017·Granted Oct 2, 2018·8 cites·10 claims
- 4494US9536945B1MOSFET with ultra low drain leakageIBM·Filed 2015·Granted Jan 3, 2017·7 cites·14 claims
- 4594US9034741B2Halo region formation by epitaxial growthIBM·Filed 2013·Granted May 19, 2015·15 cites·20 claims
- 4694US6855436B2Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion annealIBM·Filed 2003·Granted Feb 15, 2005·50 cites·11 claims
- 4794US6329827B1High density cantilevered probe for electronic devicesIBM·Filed 1998·Granted Dec 11, 2001·107 cites·22 claims
- 4893US9666674B2Formation of large scale single crystalline grapheneGLOBALFOUNDRIES INC·Filed 2015·Granted May 30, 2017·7 cites·20 claims
- 4993US9443940B1Defect reduction with rotated double aspect ratio trappingIBM·Filed 2015·Granted Sep 13, 2016·9 cites·18 claims
- 5093US9018675B2Heterojunction III-V photovoltaic cell fabricationIBM·Filed 2014·Granted Apr 28, 2015·10 cites·7 claims
Showing the top 50 of 375 patent records by PatentIndex Score.
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