Inventor · disambiguated record
Adrianus W. Ludikhuize
Also filed as: LUDIKHUIZE ADRIANUS W · LUDIKHUIZE ADRIANUS WILLEM
30 granted patents·3 pending applications·753 citations·filing 1976–2008
97Inventor score
Top patents by PatentIndex Score
33 records- 0196US5473180ASemiconductor device with an MOST provided with an extended drain region for high voltagesPHILIPS CORP·Filed 1994·Granted Dec 5, 1995·162 cites·5 claims
- 0291US6288424B1Semiconductor device having LDMOS transistors and a screening layerPHILIPS CORP·Filed 1999·Granted Sep 11, 2001·126 cites·6 claims
- 0389US5883413ALateral high-voltage DMOS transistor with drain zone charge drainingPHILIPS CORP·Filed 1996·Granted Mar 16, 1999·86 cites·8 claims
- 0487US4422089ASemiconductor device having a reduced surface field strengthPHILIPS CORP·Filed 1980·Granted Dec 20, 1983·50 cites·21 claims
- 0582US4590509AMIS high-voltage element with high-resistivity gate and field-platePHILIPS CORP·Filed 1983·Granted May 20, 1986·28 cites·9 claims
- 0674US6933559B1LDMOS with guard ring (of same type as drain) surrounding the drainKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Aug 23, 2005·24 cites·10 claims
- 0773US8022506B2SOI device with more immunity from substrate voltageNXP BV·Filed 2005·Granted Sep 20, 2011·5 cites·16 claims
- 0873US7459750B2Integrated half-bridge power circuitNXP BV·Filed 2003·Granted Dec 2, 2008·20 cites·12 claims
- 0972US7790589B2Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistorsNXP BV·Filed 2007·Granted Sep 7, 2010·5 cites·20 claims
- 1070US4750028ASemiconductor device having floating semiconductor zonesPHILIPS CORP·Filed 1987·Granted Jun 7, 1988·26 cites·6 claims
- 1169US5747841ACircuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangementPHILIPS CORP·Filed 1995·Granted May 5, 1998·30 cites·13 claims
- 1267US4047131AVoltage-controlled HF-signal attenuatorPHILIPS CORP·Filed 1976·Granted Sep 6, 1977·12 cites·4 claims
- 1366US6608351B1Semiconductor device comprising a high-voltage circuit elementKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Aug 19, 2003·17 cites·8 claims
- 1466US5347155ASemiconductor device having a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate regionPHILIPS CORP·Filed 1993·Granted Sep 13, 1994·26 cites·14 claims
- 1558US6160304ASemiconductor device comprising a half-bridge circuitPHILIPS CORP·Filed 1998·Granted Dec 12, 2000·18 cites·4 claims
- 1658US4908551ADC/AC bridge circuitPHILIPS CORP·Filed 1988·Granted Mar 13, 1990·12 cites·13 claims
- 1755US5412234AIntegrated semiconductor circuit having improved breakdown voltage characteristicsPHILIPS CORP·Filed 1994·Granted May 2, 1995·17 cites·8 claims
- 1852US5796146ASemiconductor device having a lateral insulated gate biopolar transistorPHILIPS CORP·Filed 1996·Granted Aug 18, 1998·14 cites·6 claims
- 1950US5976942AMethod of manufacturing a high-voltage semiconductor devicePHILIPS CORP·Filed 1996·Granted Nov 2, 1999·16 cites·7 claims
- 2049US5910670ASemiconductor device with improved breakdown voltage characteristicsPHILIPS CORP·Filed 1997·Granted Jun 8, 1999·12 cites·5 claims
- 2148US5998845ASemiconductor device having increased safe operating rangePHILIPS CORP·Filed 1997·Granted Dec 7, 1999·11 cites·3 claims
- 2246US2009079272A1Integrated Half-Bridge Power CircuitNXP BV·Filed 2008·Application pending·0 cites
- 2339US5786252AMethod of manufacturing a semiconductor device, and semiconductor device manufactured by such a methodPHILIPS CORP·Filed 1997·Granted Jul 28, 1998·9 cites·8 claims
- 2437US2008093641A1Method of manufacturing a multi-path lateral high-voltage field effect transistorLUDIKHUIZE ADRIANUS WILLEM·Filed 2007·Application pending·0 cites
- 2536US5610432ASemiconductor device with a fast lateral dmost provided with a high-voltage source electrodePHILIPS CORP·Filed 1994·Granted Mar 11, 1997·5 cites·7 claims
- 2636US4143383AControllable impedance attenuator having all connection contacts on one sidePHILIPS CORP·Filed 1976·Granted Mar 6, 1979·9 cites·14 claims
- 2735US4952998AIntegrated circuit with complementary MOS transistorsPHILIPS CORP·Filed 1989·Granted Aug 28, 1990·4 cites·4 claims
- 2834US4682205ASemiconductor devicePHILIPS CORP·Filed 1986·Granted Jul 21, 1987·4 cites·7 claims
- 2933US7061059B2Semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Jun 13, 2006·0 cites·3 claims
- 3033US6597044B2Semiconductor device having a charge removal facility for minority carriersFiled 2002·Granted Jul 22, 2003·0 cites·2 claims
- 3133US4987469ALateral high-voltage transistor suitable for use in emitter followersPHILIPS CORP·Filed 1988·Granted Jan 22, 1991·3 cites·6 claims
- 3233US2009045460A1mosfet for high voltage applications and a method of fabricating sameKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 3331US5324978ASemiconductor device having an improved breakdown voltage-raising structurePHILIPS CORP·Filed 1993·Granted Jun 28, 1994·2 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →