Inventor · disambiguated record
Annie Levesque
Also filed as: LEVESQUE ANNIE · Lévesque Annie
7 granted patents·2 pending applications·13 citations·filing 2013–2018
78Inventor score
Top patents by PatentIndex Score
9 records- 0183US10204984B1Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicideGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 12, 2019·3 cites·20 claims
- 0277US9349650B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·3 cites·16 claims
- 0375US9536989B1Field-effect transistors with source/drain regions of reduced topographyGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·2 cites·11 claims
- 0471US9673295B2Contact resistance optimization via EPI growth engineeringGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 6, 2017·3 cites·20 claims
- 0566US9349649B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·1 cites·17 claims
- 0662US9752251B2Self-limiting selective epitaxy process for preventing merger of semiconductor finsIBM·Filed 2013·Granted Sep 5, 2017·1 cites·25 claims
- 0748US10886178B2Device with highly active acceptor doping and method of production thereofGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 5, 2021·0 cites·20 claims
- 0838US2018197734A1Buffer layer to inhibit wormholes in semiconductor fabricationGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 0937US2019326112A1DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPACER CAVITY AND METHOD FOR PRODUCING THE SAMEGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →