Inventor · disambiguated record
Hoon Kim
Also filed as: KIM HOON · KIM HOON T · KIM HOON-TAE
196 granted patents·41 pending applications·2,101 citations·filing 1999–2025
99Inventor score
Top patents by PatentIndex Score
237 records- 0199US9847390B1Self-aligned wrap-around contacts for nanosheet devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 19, 2017·74 cites·20 claims
- 0299US9780208B1Method and structure of forming self-aligned RMG gate for VFETGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 3, 2017·60 cites·19 claims
- 0399US9508604B1Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacersGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·51 cites·25 claims
- 0498US9911619B1Fin cut with alternating two color fin hardmaskGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 6, 2018·24 cites·19 claims
- 0598US9899321B1Methods of forming a gate contact for a semiconductor device above the active regionGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 20, 2018·26 cites·25 claims
- 0698US9799748B1Method of forming inner spacers on a nano-sheet/wire deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 24, 2017·33 cites·19 claims
- 0798US9780197B1Method of controlling VFET channel lengthGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 3, 2017·30 cites·20 claims
- 0898US9379017B1Method of forming a semiconductor structure including a plurality of fins and an alignment/overlay markGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 28, 2016·32 cites·18 claims
- 0998US9178036B1Methods of forming transistor devices with different threshold voltages and the resulting productsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 3, 2015·45 cites·29 claims
- 1098US9012319B1Methods of forming gate structures with multiple work functions and the resulting productsGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 21, 2015·105 cites·19 claims
- 1197US9876651B2Home appliance and home network system using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 23, 2018·188 cites·22 claims
- 1297US9761495B1Methods of performing concurrent fin and gate cut etch processes for FinFET semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·24 cites·20 claims
- 1397US9691664B1Dual thick EG oxide integration under aggressive SG fin pitchGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 27, 2017·22 cites·17 claims
- 1497US9337101B1Methods for selectively removing a fin when forming FinFET devicesGLOBALFOUNDRIES INC·Filed 2015·Granted May 10, 2016·25 cites·28 claims
- 1596US10410933B2Replacement metal gate patterning for nanosheet devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 10, 2019·17 cites·18 claims
- 1696US9966456B1Methods of forming gate electrodes on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted May 8, 2018·14 cites·20 claims
- 1796US9735242B2Semiconductor device with a gate contact positioned above the active regionGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 15, 2017·17 cites·13 claims
- 1896US9425106B1Methods of performing fin cut etch processes for taper FinFET semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·15 cites·20 claims
- 1996US9190488B1Methods of forming gate structure of semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 17, 2015·21 cites·13 claims
- 2095US11032009B1Method and apparatus for generating signal of user equipment and base station in wireless communication systemLG ELECTRONICS INC·Filed 2020·Granted Jun 8, 2021·19 cites·8 claims
- 2195US9589836B1Methods of forming ruthenium conductive structures in a metallization layerGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 7, 2017·16 cites·15 claims
- 2295US9502286B2Methods of forming self-aligned contact structures on semiconductor devices and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 22, 2016·14 cites·20 claims
- 2395US9312183B1Methods for forming FinFETS having a capping layer for reducing punch through leakageGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·19 cites·14 claims
- 2495US8222134B2Self-aligned barrier layers for interconnectsGORDON ROY GERALD·Filed 2011·Granted Jul 17, 2012·18 cites·20 claims
- 2595US7932176B2Self-aligned barrier layers for interconnectsHARVARD COLLEGE·Filed 2009·Granted Apr 26, 2011·26 cites·60 claims
- 2694US10038065B2Method of forming a semiconductor device with a gate contact positioned above the active regionGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 31, 2018·10 cites·20 claims
- 2794US10014389B2Methods of forming IC products comprising a nano-sheet device and a transistor device having first and second replacement gate structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 3, 2018·10 cites·22 claims
- 2894US9018711B1Selective growth of a work-function metal in a replacement metal gate of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 28, 2015·14 cites·15 claims
- 2993US10199264B2Self aligned interconnect structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 5, 2019·7 cites·18 claims
- 3093US9653356B2Methods of forming self-aligned device level contact structuresGLOBALFOUNDRIES INC·Filed 2015·Granted May 16, 2017·8 cites·20 claims
- 3193US9502308B1Methods for forming transistor devices with different source/drain contact liners and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 22, 2016·10 cites·20 claims
- 3293US9105497B2Methods of forming gate structures for transistor devices for CMOS applicationsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·19 cites·24 claims
- 3393US7940346B2Liquid crystal display and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 10, 2011·10 cites·9 claims
- 3492US11581038B2Semiconductor device for selectively performing isolation function and layout displacement method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 14, 2023·2 cites·20 claims
- 3592US10319627B2Air-gap spacers for field-effect transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 11, 2019·7 cites·20 claims
- 3692US9595583B2Methods for forming FinFETS having a capping layer for reducing punch through leakageGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 14, 2017·8 cites·13 claims
- 3792US9362377B1Low line resistivity and repeatable metal recess using CVD cobalt reflowGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·8 cites·19 claims
- 3892US9362283B2Gate structures for transistor devices for CMOS applications and productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·9 cites·20 claims
- 3992US8208887B2Receiving circuit including balun circuit and notch filter and operating method thereofLEE HEE-HYUN·Filed 2009·Granted Jun 26, 2012·30 cites·19 claims
- 4092US7310023B2Frequency synthesizerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 18, 2007·24 cites·31 claims
- 4191US10177241B2Methods of forming a gate contact for a transistor above the active region and an air gap adjacent the gate of the transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 8, 2019·7 cites·20 claims
- 4291US9922929B1Self aligned interconnect structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 20, 2018·6 cites·19 claims
- 4391US9741623B2Dual liner CMOS integration methods for FinFET devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 22, 2017·7 cites·21 claims
- 4491US9735060B1Hybrid fin cut etching processes for products comprising tapered and non-tapered FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 15, 2017·7 cites·20 claims
- 4591US9722053B1Methods, apparatus and system for local isolation formation for finFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·6 cites·19 claims
- 4691US9478538B1Methods for forming transistor devices with different threshold voltages and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Oct 25, 2016·7 cites·15 claims
- 4791USD624957SCopy machineSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 5, 2010·41 cites·1 claims
- 4890US10923389B2Air-gap spacers for field-effect transistorsGLOBALFOUNDRIES US INC·Filed 2019·Granted Feb 16, 2021·5 cites·20 claims
- 4990US10008577B2Methods of forming an air-gap spacer on a semiconductor device and the resulting deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 26, 2018·7 cites·23 claims
- 5090US8932923B2Semiconductor gate structure for threshold voltage modulation and method of making sameGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 13, 2015·11 cites·15 claims
Showing the top 50 of 237 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →