Inventor · disambiguated record
Daniel Kueck
Also filed as: KUECK DANIEL
14 granted patents·4 pending applications·67 citations·filing 2012–2021
90Inventor score
Top patents by PatentIndex Score
18 records- 0196US10332876B2Method of forming compound semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jun 25, 2019·16 cites·17 claims
- 0296US9577073B2Method of forming a silicon-carbide device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 21, 2017·19 cites·18 claims
- 0394US10211306B2Semiconductor device with diode region and trench gate structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 19, 2019·15 cites·21 claims
- 0483US9923066B2Wide bandgap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 20, 2018·4 cites·25 claims
- 0579US10700182B2Semiconductor device with transistor cells and a drift structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 30, 2020·2 cites·26 claims
- 0678US10217636B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 26, 2019·2 cites·17 claims
- 0773US9960230B2Silicon-carbide transistor device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 1, 2018·1 cites·20 claims
- 0872US9029974B2Semiconductor device, junction field effect transistor and vertical field effect transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 12, 2015·3 cites·17 claims
- 0972US8994078B2Semiconductor deviceKUECK DANIEL·Filed 2012·Granted Mar 31, 2015·4 cites·18 claims
- 1068US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
- 1168US10553685B2SiC semiconductor device with offset in trench bottomINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 4, 2020·1 cites·24 claims
- 1260US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 1356US2018248000A1Vertical Transistor Device with a Variable Gate Dielectric ThicknessINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
- 1450US9934972B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 3, 2018·0 cites·21 claims
- 1547US2017345905A1Wide-Bandgap Semiconductor Device with Trench Gate StructuresINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 1646US10056365B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 21, 2018·0 cites·15 claims
- 1743US2020006544A1Semiconductor device including silicon carbide body and transistor cellsINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
- 1832US2017032964A1Method for Protecting a Surface of a Substrate and Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →