Inventor · disambiguated record
Shahrukh Khan
Also filed as: KHAN SHAHRUKH · KHAN SHAHRUKH A · KHAN SHAHRUKH AKBAR
6 granted patents·22 pending applications·10 citations·filing 2014–2024
73Inventor score
Top patents by PatentIndex Score
28 records- 0186US9685334B1Methods of forming semiconductor fin with carbon dopant for diffusion controlGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 20, 2017·6 cites·19 claims
- 0268US9431485B2Formation of finFET junctionGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 30, 2016·2 cites·16 claims
- 0366US9633946B1Seamless metallization contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·1 cites·20 claims
- 0465US9806161B1Integrated circuit structure having thin gate dielectric device and thick gate dielectric deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 31, 2017·1 cites·18 claims
- 0561US2025385124A1Self-aligned gate cut structureIBM·Filed 2024·Application pending·0 cites
- 0658US2025380488A1Stacked fets with lateral gate contact plugsIBM·Filed 2024·Application pending·0 cites
- 0758US2025192003A1Backside contact extension for stacked field effect transistorIBM·Filed 2023·Application pending·0 cites
- 0856US2025212508A1Stacked transistor structures with aligned cell boundaries and shifted channelsIBM·Filed 2023·Application pending·0 cites
- 0955US2025203935A1Self-aligned dielectric isolation on source/drainsIBM·Filed 2023·Application pending·0 cites
- 1055US2025107197A1Spacer to avoid source and drain shortingIBM·Filed 2023·Application pending·0 cites
- 1155US2025072113A1Stacked FET With Local ContactIBM·Filed 2023·Application pending·0 cites
- 1255US2025098322A1Metal insulator metal capacitor (mim capacitor)IBM·Filed 2023·Application pending·0 cites
- 1355US2025194242A1Lateral passive diodes co-integrated with nanosheet technologyIBM·Filed 2023·Application pending·0 cites
- 1455US2025192054A1Second air gap type for subtractive interconnectsIBM·Filed 2023·Application pending·0 cites
- 1555US2025081525A1Via To Avoid Local Interconnect ShortingIBM·Filed 2023·Application pending·0 cites
- 1654US2024429226A1Protection diode for stacked field effect transistorIBM·Filed 2023·Application pending·0 cites
- 1754US2025031430A1Extended backside contact in stack nanosheetIBM·Filed 2023·Application pending·0 cites
- 1854US2025125261A1Semiconductor structures with multi-stage viasIBM·Filed 2023·Application pending·0 cites
- 1954US2024429270A1Metal insulator metal capacitor (mim capacitor)IBM·Filed 2023·Application pending·0 cites
- 2053US2024421037A1Source/drain protection using a backside placeholderIBM·Filed 2023·Application pending·0 cites
- 2152US2025185377A1Co-integration of passive device and vertically stacked nanosheetsIBM·Filed 2023·Application pending·0 cites
- 2252US2025212506A1Split gate contacts for vertically stacked transistorsIBM·Filed 2023·Application pending·0 cites
- 2351US2025006736A1Stacked nanosheet fets with gate dielectric fillIBM·Filed 2023·Application pending·0 cites
- 2438US9748235B2Gate stack for integrated circuit structure and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·0 cites·20 claims
- 2537US9741581B2Using tensile mask to minimize buckling in substrateGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 22, 2017·0 cites·13 claims
- 2635US2019019862A1Coalesced fin to reduce fin bendingGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 2734US2018019162A1Amorphous carbon layer for cobalt etch protection in dual damascene back end of the line integrated circuit metallization integrationGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 2832US2017170016A1Multiple patterning method for substrateGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →