Inventor · disambiguated record
Zoran Krivokapic
Also filed as: KRIVOKAPIC ZORAN
152 granted patents·4 pending applications·6,146 citations·filing 1992–2018
99Inventor score
Top patents by PatentIndex Score
156 records- 0199US6921963B2Narrow fin FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 26, 2005·273 cites·10 claims
- 0299US6396108B1Self-aligned double gate silicon-on-insulator (SOI) deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted May 28, 2002·286 cites·9 claims
- 0398US9663346B1MEMs-based resonant FinFETGLOBALFOUNDRIES INC·Filed 2016·Granted May 30, 2017·33 cites·20 claims
- 0498US6803631B2Strained channel finfetADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 12, 2004·152 cites·30 claims
- 0598US6716684B1Method of making a self-aligned triple gate silicon-on-insulator deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 6, 2004·160 cites·9 claims
- 0698US6657276B1Shallow trench isolation (STI) region with high-K liner and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 2, 2003·198 cites·10 claims
- 0797US6897527B2Strained channel FinFETADVANCED MICRO DEVICES INC·Filed 2004·Granted May 24, 2005·118 cites·28 claims
- 0897US6833588B2Semiconductor device having a U-shaped gate structureADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 21, 2004·116 cites·14 claims
- 0997US6765303B1FinFET-based SRAM cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·134 cites·19 claims
- 1097US6528858B1MOSFETs with differing gate dielectrics and method of formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 4, 2003·162 cites·31 claims
- 1197US6452229B1Ultra-thin fully depleted SOI device with T-shaped gate and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 17, 2002·122 cites·13 claims
- 1297US5655110AMethod for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafersADVANCED MICRO DEVICES INC·Filed 1995·Granted Aug 5, 1997·284 cites·39 claims
- 1396US6917068B1Semiconductor device having conductive structures formed near a gate electrodeADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 12, 2005·94 cites·14 claims
- 1496US6855583B1Method for forming tri-gate FinFET with mesa isolationADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·126 cites·19 claims
- 1596US6762483B1Narrow fin FinFETADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 13, 2004·110 cites·14 claims
- 1696US6555879B1SOI device with metal source/drain and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·135 cites·19 claims
- 1796US6294412B1Silicon based lateral tunneling memory cellADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 25, 2001·109 cites·26 claims
- 1895US10141414B1Negative capacitance matching in gate electrode structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 27, 2018·12 cites·18 claims
- 1995US9899363B1Fin-FET resonant body transistorGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 20, 2018·15 cites·20 claims
- 2095US9673376B1Methods to utilize piezoelectric materials as gate dielectric in high frequency RBTs in an IC deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 6, 2017·11 cites·12 claims
- 2195US7994020B2Method of forming finned semiconductor devices with trench isolationADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 9, 2011·55 cites·13 claims
- 2295US7012298B1Non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 14, 2006·86 cites·20 claims
- 2395US6639271B1Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 28, 2003·99 cites·14 claims
- 2495US6512273B1Method and structure for improving hot carrier immunity for devices with very shallow junctionsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 28, 2003·115 cites·10 claims
- 2595US6087208AMethod for increasing gate capacitance by using both high and low dielectric gate materialADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·137 cites·9 claims
- 2695US5646870AMethod for setting and adjusting process parameters to maintain acceptable critical dimensions across each die of mass-produced semiconductor wafersADVANCED MICRO DEVICES INC·Filed 1995·Granted Jul 8, 1997·164 cites·41 claims
- 2794US7781810B1Germanium MOSFET devices and methods for making sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 24, 2010·24 cites·19 claims
- 2894US6888198B1Straddled gate FDSOI deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted May 3, 2005·83 cites·15 claims
- 2994US6509234B1Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gateADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 21, 2003·82 cites·15 claims
- 3093US10002859B1Fin-FET resonant body transistorGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 19, 2018·9 cites·20 claims
- 3193US7858989B2Device and process of forming device with device structure formed in trench and graphene layer formed thereoverGLOBALFOUNDRIES INC·Filed 2008·Granted Dec 28, 2010·41 cites·22 claims
- 3293US6864164B1Finfet gate formation using reverse trim of dummy gateADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 8, 2005·76 cites·17 claims
- 3392US8431466B2Method of forming finned semiconductor devices with trench isolationLIN MING-REN·Filed 2011·Granted Apr 30, 2013·20 cites·11 claims
- 3492US7309650B1Memory device having a nanocrystal charge storage region and methodSPANSION LLC·Filed 2005·Granted Dec 18, 2007·22 cites·22 claims
- 3592US7148526B1Germanium MOSFET devices and methods for making sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 12, 2006·53 cites·6 claims
- 3692US6815297B1Ultra-thin fully depleted SOI device and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 9, 2004·63 cites·11 claims
- 3791US7871873B2Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor materialGLOBAL FOUNDRIES INC·Filed 2009·Granted Jan 18, 2011·23 cites·19 claims
- 3891US7816767B2Negative differential resistance diode and SRAM utilizing such deviceADVANCED MICRO DEVICES INC·Filed 2009·Granted Oct 19, 2010·20 cites·18 claims
- 3991US7508050B1Negative differential resistance diode and SRAM utilizing such deviceADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 24, 2009·21 cites·14 claims
- 4091US6567717B2Feed-forward control of TCI doping for improving mass-production-wise, statistical distribution of critical performance parameters in semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 20, 2003·59 cites·19 claims
- 4190US8815739B2FinFET device with a graphene gate electrode and methods of forming sameKRIVOKAPIC ZORAN·Filed 2012·Granted Aug 26, 2014·14 cites·14 claims
- 4290US8304760B2Sidewall graphene devices for 3-D electronicsCHEN AN·Filed 2011·Granted Nov 6, 2012·13 cites·9 claims
- 4390US6975014B1Method for making an ultra thin FDSOI device with improved short-channel performanceADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 13, 2005·64 cites·7 claims
- 4490US6537920B1Formation of vertical transistors using block copolymer lithographyADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 25, 2003·47 cites·20 claims
- 4590US5643428AMultiple tier collimator system for enhanced step coverage and uniformityADVANCED MICRO DEVICES INC·Filed 1995·Granted Jul 1, 1997·67 cites·10 claims
- 4690US5571738AMethod of making poly LDD self-aligned channel transistorsADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 5, 1996·102 cites·13 claims
- 4789US8049334B1Buried silicide local interconnect with sidewall spacers and method for making the sameADVANCED MICRO DEVICES INC·Filed 2010·Granted Nov 1, 2011·8 cites·20 claims
- 4889US6599831B1Metal gate electrode using silicidation and method of formation thereofADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 29, 2003·40 cites·23 claims
- 4989US6339244B1Fully depleted silicon on insulator semiconductor device and manufacturing method thereforADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 15, 2002·42 cites·15 claims
- 5088US6830850B1Interferometric lithography using reflected light from applied layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 14, 2004·35 cites·25 claims
Showing the top 50 of 156 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →