Inventor · disambiguated record
Mark W. Michael
Also filed as: MICHAEL MARK · MICHAEL MARK W
115 granted patents·1 pending application·4,141 citations·filing 1985–2011
99Inventor score
Files withADVANCED MICRO DEVICES INC105GLOBALFOUNDRIES INC3HARRIS CORP2SHI ZHONGHAI2ADVANCED MICRO DEVCIES INC1
Top patents by PatentIndex Score
116 records- 0199US6111260AMethod and apparatus for in situ anneal during ion implantADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 29, 2000·305 cites·19 claims
- 0298US5850105ASubstantially planar semiconductor topography using dielectrics and chemical mechanical polishADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 15, 1998·278 cites·10 claims
- 0394US5953626ADissolvable dielectric methodADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 14, 1999·160 cites·12 claims
- 0493US6060345AMethod of making NMOS and PMOS devices with reduced masking stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·114 cites·22 claims
- 0593US5759913AMethod of formation of an air gap within a semiconductor dielectric by solvent desorptionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 2, 1998·148 cites·17 claims
- 0692US5885877AComposite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·107 cites·27 claims
- 0792US5827776AMethod of making an integrated circuit which uses an etch stop for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 27, 1998·139 cites·14 claims
- 0891US5963803AMethod of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widthsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·90 cites·33 claims
- 0990US7355201B2Test structure for measuring electrical and dimensional characteristicsADVANCED MICRO DEVICES INC·Filed 2006·Granted Apr 8, 2008·19 cites·21 claims
- 1090US5918129AMethod of channel doping using diffusion from implanted polysiliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·110 cites·18 claims
- 1189US6713357B1Method to reduce parasitic capacitance of MOS transistorsADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 30, 2004·65 cites·16 claims
- 1289US5930642ATransistor with buried insulative layer beneath the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·104 cites·20 claims
- 1389US5888675AReticle that compensates for radiation-induced lens error in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·68 cites·26 claims
- 1488US6867130B1Enhanced silicidation of polysilicon gate electrodesADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 15, 2005·45 cites·6 claims
- 1588US5792706AInterlevel dielectric with air gaps to reduce permitivityADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 11, 1998·96 cites·20 claims
- 1688US5710054AMethod of forming a shallow junction by diffusion from a silicon-based spacerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 20, 1998·92 cites·57 claims
- 1787US7473623B2Providing stress uniformity in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 6, 2009·13 cites·31 claims
- 1887US6259142B1Multiple split gate semiconductor device and fabrication methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·9 claims
- 1987US5840451AIndividually controllable radiation sources for providing an image pattern in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 24, 1998·61 cites·48 claims
- 2087US5783864AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 21, 1998·78 cites·5 claims
- 2186US5899732AMethod of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted May 4, 1999·83 cites·8 claims
- 2285US5930634AMethod of making an IGFET with a multilevel gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·63 cites·48 claims
- 2384US6225151B1Nitrogen liner beneath transistor source/drain regions to retard dopant diffusionADVANCED MICRO DEVICES INC·Filed 1997·Granted May 1, 2001·68 cites·37 claims
- 2484US6201278B1Trench transistor with insulative spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 13, 2001·48 cites·40 claims
- 2584US5814555AInterlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 29, 1998·63 cites·11 claims
- 2683US6080629AIon implantation into a gate electrode layer using an implant profile displacement layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 27, 2000·51 cites·38 claims
- 2783US5926713AMethod for achieving global planarization by forming minimum mesas in large field areasADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 20, 1999·69 cites·26 claims
- 2882US7504270B2Methods of quantifying variations resulting from manufacturing-induced corner rounding of various features, and structures for testing sameADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 17, 2009·8 cites·16 claims
- 2981US6208015B1Interlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·51 cites·21 claims
- 3081US5899727AMethod of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarizationADVANCED MICRO DEVICES INC·Filed 1996·Granted May 4, 1999·56 cites·18 claims
- 3181US5851891AIGFET method of forming with silicide contact on ultra-thin gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·42 cites·40 claims
- 3280US6166354ASystem and apparatus for in situ monitoring and control of annealing in semiconductor fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 26, 2000·37 cites·22 claims
- 3379US7861195B2Process for design of semiconductor circuitsADVANCED MIRCO DEVICES INC·Filed 2008·Granted Dec 28, 2010·10 cites·7 claims
- 3479US6197645B1Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 6, 2001·44 cites·18 claims
- 3579US5937299AMethod for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·44 cites·20 claims
- 3678US6764917B1SOI device with different silicon thicknessesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 20, 2004·23 cites·15 claims
- 3778US5998293AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVCIES INC·Filed 1998·Granted Dec 7, 1999·54 cites·11 claims
- 3876US6376330B1Dielectric having an air gap formed between closely spaced interconnect linesADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 23, 2002·48 cites·13 claims
- 3976US6261885B1Method for forming integrated circuit gate conductors from dual layers of polysiliconADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 17, 2001·18 cites·15 claims
- 4076US6096616AFabrication of a non-ldd graded p-channel mosfetADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·39 cites·15 claims
- 4176US6087706ACompact transistor structure with adjacent trench isolation and source/drain regions implanted vertically into trench wallsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·51 cites·18 claims
- 4276US5801075AMethod of forming trench transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 1, 1998·33 cites·50 claims
- 4375US6964875B1Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitanceADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 15, 2005·15 cites·10 claims
- 4473US6091149ADissolvable dielectric method and structureADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 18, 2000·37 cites·6 claims
- 4572US5976956AMethod of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 2, 1999·40 cites·33 claims
- 4672US5926717AMethod of making an integrated circuit with oxidizable trench linerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 20, 1999·41 cites·25 claims
- 4772US5885887AMethod of making an igfet with selectively doped multilevel polysilicon gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·32 cites·35 claims
- 4871US7793240B2Compensating for layout dimension effects in semiconductor device modelingADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 7, 2010·5 cites·21 claims
- 4971US5962894ATrench transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·24 cites·40 claims
- 5071US5869378AMethod of reducing overlap between gate electrode and LDD regionADVANCED MICRO DEVICES INC·Filed 1996·Granted Feb 9, 1999·29 cites·25 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Mark W. Michael files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →