Inventor · disambiguated record
Hyesook Hong
Also filed as: HONG HYESOOK
8 granted patents·3 pending applications·47 citations·filing 2001–2011
84Inventor score
Top patents by PatentIndex Score
11 records- 0173US7244642B2Method to obtain fully silicided gate electrodesTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 17, 2007·6 cites·15 claims
- 0269US6620560B2Plasma treatment of low-k dielectric films to improve patterningTEXAX INSTR INC·Filed 2001·Granted Sep 16, 2003·13 cites·22 claims
- 0366US7129162B2Dual cap layer in damascene interconnection processesTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 31, 2006·14 cites·25 claims
- 0466US6605536B2Treatment of low-k dielectric films to enable patterning of deep submicron featuresTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 12, 2003·9 cites·7 claims
- 0558US8076199B2Method and device employing polysilicon scalingFANG SHENQING·Filed 2009·Granted Dec 13, 2011·1 cites·14 claims
- 0654US7282436B2Plasma treatment for silicon-based dielectricsTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 16, 2007·4 cites·52 claims
- 0748US8637918B2Method and device employing polysilicon scalingFANG SHENQING·Filed 2011·Granted Jan 28, 2014·0 cites·10 claims
- 0843US2008242072A1Plasma dry etch process for metal-containing gatesTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 0939US2002064951A1Treatment of low-k dielectric films to enable patterning of deep submicron featuresFiled 2001·Application pending·0 cites
- 1034US2009104745A1Integration method for dual doped polysilicon gate profile and cd controlHONG HYESOOK·Filed 2007·Application pending·0 cites
- 1124US8198105B2Monitor for variation of critical dimensions (CDs) of reticlesHONG HYESOOK·Filed 2003·Granted Jun 12, 2012·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →