Inventor · disambiguated record
Charles E. Weitzel
Also filed as: WEITZEL CHARLES E · WEITZEL CHARLES EDWARD
46 granted patents·2 pending applications·1,465 citations·filing 1976–2005
99Inventor score
Top patents by PatentIndex Score
48 records- 0196US6893947B2Advanced RF enhancement-mode FETs with improved gate propertiesFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 17, 2005·124 cites·23 claims
- 0296US6867078B1Method for forming a microwave field effect transistor with high operating voltageFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Mar 15, 2005·158 cites·30 claims
- 0395US4199773AInsulated gate field effect silicon-on-sapphire transistor and method of making sameRCA CORP·Filed 1978·Granted Apr 22, 1980·71 cites·10 claims
- 0493US5885860ASilicon carbide transistor and methodMOTOROLA INC·Filed 1997·Granted Mar 23, 1999·100 cites·18 claims
- 0590US5917203ALateral gate vertical drift region transistorMOTOROLA INC·Filed 1997·Granted Jun 29, 1999·77 cites·10 claims
- 0689US5956578AMethod of fabricating vertical FET with Schottky diodeMOTOROLA INC·Filed 1997·Granted Sep 21, 1999·82 cites·16 claims
- 0787US5710455ALateral MOSFET with modified field plates and damage areasMOTOROLA INC·Filed 1996·Granted Jan 20, 1998·79 cites·13 claims
- 0884US6100549AHigh breakdown voltage resurf HFETMOTOROLA INC·Filed 1998·Granted Aug 8, 2000·56 cites·18 claims
- 0983US5661312ASilicon carbide MOSFETMOTOROLA INC·Filed 1995·Granted Aug 26, 1997·55 cites·13 claims
- 1083US5569937AHigh breakdown voltage silicon carbide transistorMOTOROLA INC·Filed 1995·Granted Oct 29, 1996·56 cites·13 claims
- 1179US5399515AMethod of fabricating a silicon carbide vertical MOSFET and deviceMOTOROLA INC·Filed 1993·Granted Mar 21, 1995·38 cites·17 claims
- 1276US7229903B2Recessed semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 12, 2007·21 cites·12 claims
- 1376US5399887AModulation doped field effect transistorMOTOROLA INC·Filed 1994·Granted Mar 21, 1995·40 cites·17 claims
- 1475US5612232AMethod of fabricating semiconductor devices and the devicesMOTOROLA INC·Filed 1996·Granted Mar 18, 1997·36 cites·19 claims
- 1574US4333099AUse of silicide to bridge unwanted polycrystalline silicon P-N junctionRCA CORP·Filed 1980·Granted Jun 1, 1982·44 cites·10 claims
- 1673US4969032AMonolithic microwave integrated circuit having vertically stacked componentsMOTOROLA INC·Filed 1988·Granted Nov 6, 1990·34 cites·26 claims
- 1771US6939781B2Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plateFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Sep 6, 2005·17 cites·17 claims
- 1870US5397717AMethod of fabricating a silicon carbide vertical MOSFETMOTOROLA INC·Filed 1993·Granted Mar 14, 1995·27 cites·21 claims
- 1970US4091527AMethod for adjusting the leakage current of silicon-on-sapphire insulated gate field effect transistorsRCA CORP·Filed 1977·Granted May 30, 1978·25 cites·12 claims
- 2069US5895260AMethod of fabricating semiconductor devices and the devicesMOTOROLA INC·Filed 1996·Granted Apr 20, 1999·29 cites·16 claims
- 2169US4131496AMethod of making silicon on sapphire field effect transistors with specifically aligned gatesRCA CORP·Filed 1977·Granted Dec 26, 1978·27 cites·11 claims
- 2267US7253455B2pHEMT with barrier optimized for low temperature operationFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 7, 2007·4 cites·13 claims
- 2367US5451797AMethod of fabricating a silicon carbide vertical MOSFET and deviceMOTOROLA INC·Filed 1995·Granted Sep 19, 1995·24 cites·5 claims
- 2466US4263709APlanar semiconductor devices and method of making the sameRCA CORP·Filed 1978·Granted Apr 28, 1981·14 cites·6 claims
- 2562US4160260APlanar semiconductor devices and method of making the sameRCA CORP·Filed 1977·Granted Jul 3, 1979·20 cites·3 claims
- 2661US5119149AGate-drain shield reduces gate to drain capacitanceMOTOROLA INC·Filed 1990·Granted Jun 2, 1992·20 cites·11 claims
- 2760US5877047ALateral gate, vertical drift region transistorMOTOROLA INC·Filed 1997·Granted Mar 2, 1999·20 cites·11 claims
- 2857US5780878ALateral gate, vertical drift region transistorMOTOROLA INC·Filed 1996·Granted Jul 14, 1998·17 cites·10 claims
- 2954US5677230AMethod of making wide bandgap semiconductor devicesMOTOROLA INC·Filed 1995·Granted Oct 14, 1997·19 cites·21 claims
- 3053US5917204AInsulated gate bipolar transistor with reduced electric fieldsMOTOROLA INC·Filed 1997·Granted Jun 29, 1999·14 cites·11 claims
- 3150US4052251AMethod of etching sapphire utilizing sulfur hexafluorideRCA CORP·Filed 1976·Granted Oct 4, 1977·11 cites·13 claims
- 3248US6146926ALateral gate, vertical drift region transistorMOTOROLA INC·Filed 1998·Granted Nov 14, 2000·9 cites·18 claims
- 3348US5933750AMethod of fabricating a semiconductor device with a thinned substrateMOTOROLA INC·Filed 1998·Granted Aug 3, 1999·14 cites·16 claims
- 3447US5635732ASilicon carbide LOCOS vertical MOSFET deviceMOTOROLA INC·Filed 1995·Granted Jun 3, 1997·9 cites·4 claims
- 3546US5641695AMethod of forming a silicon carbide JFETMOTOROLA INC·Filed 1995·Granted Jun 24, 1997·10 cites·12 claims
- 3645US6127272AMethod of electron beam lithography on very high resistivity substratesMOTOROLA INC·Filed 1998·Granted Oct 3, 2000·11 cites·22 claims
- 3745US5627385ALateral silicon carbide transistorMOTOROLA INC·Filed 1995·Granted May 6, 1997·9 cites·15 claims
- 3845US4870478ADual-gate gallium arsenide power metal semiconductor field effect transistorMOTOROLA INC·Filed 1988·Granted Sep 26, 1989·10 cites·4 claims
- 3942US4998158AHypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrierMOTOROLA INC·Filed 1987·Granted Mar 5, 1991·9 cites·1 claims
- 4040US6255710B13-D smart power ICMOTOROLA INC·Filed 1998·Granted Jul 3, 2001·6 cites·5 claims
- 4139US5693969AMESFET having a termination layer in the channel layerMOTOROLA INC·Filed 1995·Granted Dec 2, 1997·6 cites·4 claims
- 4239US5399893ADiode protected semiconductor deviceMOTOROLA INC·Filed 1993·Granted Mar 21, 1995·6 cites·11 claims
- 4336US2005104087A1InGaP pHEMT device for power amplifier operation over wide temperature rangeFiled 2004·Application pending·0 cites
- 4435US6002148ASilicon carbide transistor and methodMOTOROLA INC·Filed 1995·Granted Dec 14, 1999·3 cites·5 claims
- 4535US2002024090A13-D smart power ICFiled 2001·Application pending·0 cites
- 4634US6180495B1Silicon carbide transistor and method thereforMOTOROLA INC·Filed 1998·Granted Jan 30, 2001·3 cites·3 claims
- 4730US5852316AComplementary heterojunction amplifierMOTOROLA INC·Filed 1994·Granted Dec 22, 1998·0 cites·12 claims
- 4828US5796122AMethod for planarizing wide bandgap semiconductor devicesMOTOROLA INC·Filed 1997·Granted Aug 18, 1998·1 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →