Inventor · disambiguated record
Yun-Seung Shin
Also filed as: SHIN YUN-SEUNG
33 granted patents·2 pending applications·653 citations·filing 1989–2011
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD31CHOI JUNG-DAL1SAMSUNG EECTRONICS CO LTD1SAMSUNG ELECTRONCIS CO LTD1SHIN YUN SEUNG1
Top patents by PatentIndex Score
35 records- 0193US7652926B2Nonvolatile semiconductor memory device including a cell string with dummy cellsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 26, 2010·32 cites·16 claims
- 0293US7427531B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·27 cites·30 claims
- 0390US5940716AMethods of forming trench isolation regions using repatterned trench masksSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 17, 1999·177 cites·15 claims
- 0489US7582941B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·14 cites·6 claims
- 0589US6487117B1Method for programming NAND-type flash memory device using bulk biasSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 26, 2002·57 cites·12 claims
- 0677US7573411B2Digital-to-analog converter, display panel driver having the same, and digital-to-analog converting methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 11, 2009·10 cites·23 claims
- 0777US4948990ABiCMOS inverter circuitSAMSUNG ELECTRONICS CO LTD·Filed 1989·Granted Aug 14, 1990·23 cites·1 claims
- 0875US6026039AParallel test circuit for semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 15, 2000·44 cites·6 claims
- 0971US7973483B2Light emitting pixel and apparatus for driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 5, 2011·3 cites·6 claims
- 1071US5488007AMethod of manufacture of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Jan 30, 1996·43 cites·10 claims
- 1167US5852572ASmall-sized static random access memory cellSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 22, 1998·26 cites·21 claims
- 1265US5902126AMethods for forming integrated circuit capacitor electrodes including surrounding insulating sidewalls and spacersSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted May 11, 1999·28 cites·24 claims
- 1364US8043869B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·2 cites·10 claims
- 1463US7994493B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 9, 2011·4 cites·81 claims
- 1561US7605473B2Nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·1 cites·5 claims
- 1661US5414302ASemiconductor device with a multilayered contact structure having a boro-phosphate silicate glass planarizing layerSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted May 9, 1995·29 cites·10 claims
- 1758US5965939ASemiconductor device and a method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 12, 1999·19 cites·9 claims
- 1858US5149664ASelf-aligning ion-implantation method for semiconductor device having multi-gate type MOS transistor structureSAMSUNG EECTRONICS CO LTD·Filed 1989·Granted Sep 22, 1992·17 cites·17 claims
- 1956US5930621AMethods for forming vertical electrode structures and related structuresSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 27, 1999·16 cites·27 claims
- 2055US6490223B1Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 3, 2002·7 cites·15 claims
- 2155US5732028AReference voltage generator made of BiMOS transistorsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 24, 1998·16 cites·33 claims
- 2254US5960293AMethods including oxide masks for fabricating capacitor structures for integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 28, 1999·15 cites·22 claims
- 2353US2009325374A1Methods of Fabricating Nonvolatile Memory DevicesCHOI JUNG-DAL·Filed 2009·Application pending·0 cites
- 2449US5879984AMethods for fabricating capacitor structures using a photoresist layerSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 9, 1999·10 cites·18 claims
- 2549US5208470ASemiconductor memory device with a stacked capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted May 4, 1993·14 cites·13 claims
- 2648US8284129B2Light emitting pixel and apparatus for driving the sameSHIN YUN SEUNG·Filed 2011·Granted Oct 9, 2012·0 cites·15 claims
- 2746US7595747B2Digital-to-analog converter, and method thereofSAMSUNG ELECTRONCIS CO LTD·Filed 2008·Granted Sep 29, 2009·1 cites·18 claims
- 2844US7851878B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Dec 14, 2010·0 cites·15 claims
- 2942US7952918B2Method of operating a magnetoresistive RAMSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 31, 2011·0 cites·4 claims
- 3039US5523255AMethod for forming a device isolation film of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jun 4, 1996·10 cites·20 claims
- 3139US2006108627A1NAND flash memory devices including multi-layer memory cell transistor structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3238US7791929B2Magnetoresistive RAM and associated methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·0 cites·16 claims
- 3334US6816429B2Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 9, 2004·0 cites·12 claims
- 3431US5858860AMethods of fabricating field isolated semiconductor devices including step reducing regionsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 12, 1999·4 cites·9 claims
- 3526US5019881ANonvolatile semiconductor memory componentSAMSUNG ELECTRONICS CO LTD·Filed 1989·Granted May 28, 1991·4 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →