Inventor · disambiguated record
Guang-Jye Shiau
Also filed as: SHIAU GUANG-JYE
8 granted patents·5 pending applications·369 citations·filing 1997–2016
86Inventor score
Top patents by PatentIndex Score
13 records- 0194US6185839B1Semiconductor process chamber having improved gas distributorAPPLIED MATERIALS INC·Filed 1998·Granted Feb 13, 2001·83 cites·44 claims
- 0292US5866483AMethod for anisotropically etching tungsten using SF6, CHF3, and N2APPLIED MATERIALS INC·Filed 1997·Granted Feb 2, 1999·254 cites·22 claims
- 0388US6449871B1Semiconductor process chamber having improved gas distributorAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·26 cites·37 claims
- 0457US2014299964A1On-chip inductor using redistribution layer and dual-layer passiviationBROADCOM CORP·Filed 2014·Application pending·0 cites
- 0552US9337188B2Metal-insulator-metal capacitor structureBROADCOM CORP·Filed 2013·Granted May 10, 2016·0 cites·21 claims
- 0650US9287209B2Metal finger capacitor for high-K metal gate processesWOO AGNES NEVES·Filed 2011·Granted Mar 15, 2016·1 cites·20 claims
- 0747US6950355B2System and method to screen defect related reliability failures in CMOS SRAMSBROADCOM CORP·Filed 2001·Granted Sep 27, 2005·4 cites·13 claims
- 0845US2016233212A1Metal-insulator-metal capacitor structureBROADCOM CORP·Filed 2016·Application pending·0 cites
- 0943US8841674B2Field transistor structure manufactured using gate last processLu chao-yang·Filed 2011·Granted Sep 23, 2014·1 cites·23 claims
- 1042US8717137B2On-chip inductor using redistribution layer and dual-layer passivationCHEN HENRY KUO-SHUN·Filed 2006·Granted May 6, 2014·0 cites·20 claims
- 1139US2008067589A1Transistor having reduced channel dopant fluctuationITO AKIRA·Filed 2006·Application pending·0 cites
- 1235US2015194433A1Gate substantial contact based one-time programmable deviceBROADCOM CORP·Filed 2014·Application pending·0 cites
- 1335US2003034489A1Apparatus and method for a production testline to monitor CMOS SRAMsBROADCOM CORP·Filed 2002·Application pending·0 cites
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